EP1513191B1 - Heizvorrichtung mit elektrostatischer Adsorptionsfunktion - Google Patents

Heizvorrichtung mit elektrostatischer Adsorptionsfunktion Download PDF

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Publication number
EP1513191B1
EP1513191B1 EP04255100A EP04255100A EP1513191B1 EP 1513191 B1 EP1513191 B1 EP 1513191B1 EP 04255100 A EP04255100 A EP 04255100A EP 04255100 A EP04255100 A EP 04255100A EP 1513191 B1 EP1513191 B1 EP 1513191B1
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EP
European Patent Office
Prior art keywords
electrostatic adsorption
insulating layer
heating
layer
heating apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
EP04255100A
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English (en)
French (fr)
Other versions
EP1513191A3 (de
EP1513191A2 (de
Inventor
Takuma c/o Gunma Complex Kushihashi
Yukio c/o Gunma Complex Kurosawa
Masaki c/o Gunma Complex Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
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Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of EP1513191A2 publication Critical patent/EP1513191A2/de
Publication of EP1513191A3 publication Critical patent/EP1513191A3/de
Application granted granted Critical
Publication of EP1513191B1 publication Critical patent/EP1513191B1/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)

Claims (8)

  1. Eine Heizvorrichtung mit einer elektrostatischen Adsorptionsfunktion, die mindestens ein Trägersubstrat (2), eine Elektrode (4) für die elektrostatische Adsorption und eine Heizschicht (5), die auf dem Trägersubstrat (2) gebildet sind, und eine Isolierschicht (6), die gebildet ist, um die Elektrode (4) für die elektrostatische Adsorption und die Heizschicht (5) abzudecken, beinhaltet, dadurch gekennzeichnet, dass eine Oberflächenrauheit der Isolierschicht (6) Ra ≤ 0,05 µm und Rmax ≤ 0,6 µm erfüllt, wobei Ra die mittlere Oberflächenrauheit ist und Rmax die maximale Oberflächenrauheit ist, und die Vickershärte der Oberfläche der Isolierschicht (6) 10 GPa oder weniger beträgt.
  2. Heizvorrichtung mit einer elektrostatischen Adsorptionsfunktion gemäß Anspruch 1, wobei die Isolierschicht (6) aus pyrolytischem Bornitrid oder Kohlenstoff enthaltendem pyrolytischem Bornitrid besteht.
  3. Heizvorrichtung mit einer elektrostatischen Adsorptionsfunktion gemäß Anspruch 1 oder 2, wobei die Isolierschicht (6) eine Dicke von 50-500 µm aufweist.
  4. Heizvorrichtung mit einer elektrostatischen Adsorptionsfunktion gemäß einem der Ansprüche 1 bis 3, wobei die Elektrode (4) für die elektrostatische Adsorption und die Heizschicht (5) auf einer Schutzschicht (3) gebildet sind, die auf dem Trägersubstrat (2) gebildet ist.
  5. Heizvorrichtung mit einer elektrostatischen Adsorptionsfunktion gemäß Anspruch 4, wobei die Schutzschicht (3) aus pyrolytischem Bornitrid besteht.
  6. Heizvorrichtung mit einer elektrostatischen Adsorptionsfunktion gemäß einem der Ansprüche 1 bis 5, wobei das Trägersubstrat (2) aus einem beliebigen von einem Siliziumnitrid-Sinterkörper, einem Bornitrid-Sinterkörper, einem gemischten Sinterkörper aus Bornitrid und Aluminiumnitrid, einem Aluminiumoxid-Sinterkörper, einem Aluminiumnitrid-Sinterkörper und Graphit besteht.
  7. Heizvorrichtung mit einer elektrostatischen Adsorptionsfunktion gemäß einem der Ansprüche 1 bis 6, wobei die Elektrode (4) für die elektrostatische Adsorption und/oder die Heizschicht (5) aus einem beliebigen von Gold, der Platingruppe, Silber, einer Mischung aus Gold oder der Platingruppe und Silber, Titan, Wolfram, Tantal, Molybdän, pyrolytischem Graphit und Bor und/oder Borcarbid enthaltendem pyrolytischem Graphit bestehen.
  8. Heizvorrichtung mit einer elektrostatischen Adsorptionsfunktion gemäß einem der Ansprüche 1 bis 7, wobei die Elektrode (4) für die elektrostatische Adsorption und/oder die Heizschicht (5) durch Siebdruck oder chemische Gasphasenabscheidung gebildet sind.
EP04255100A 2003-08-27 2004-08-25 Heizvorrichtung mit elektrostatischer Adsorptionsfunktion Expired - Fee Related EP1513191B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003209136A JP4309714B2 (ja) 2003-08-27 2003-08-27 静電吸着機能を有する加熱装置
JP2003209136 2003-08-27

Publications (3)

Publication Number Publication Date
EP1513191A2 EP1513191A2 (de) 2005-03-09
EP1513191A3 EP1513191A3 (de) 2006-03-22
EP1513191B1 true EP1513191B1 (de) 2012-07-11

Family

ID=34131441

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04255100A Expired - Fee Related EP1513191B1 (de) 2003-08-27 2004-08-25 Heizvorrichtung mit elektrostatischer Adsorptionsfunktion

Country Status (3)

Country Link
US (1) US6949726B2 (de)
EP (1) EP1513191B1 (de)
JP (1) JP4309714B2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005056364B3 (de) 2005-11-25 2007-08-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bipolarer Trägerwafer und mobile, bipolare, elektrostatische Waferanordnung
JP2007317820A (ja) * 2006-05-25 2007-12-06 Shin Etsu Chem Co Ltd 静電吸着装置
US20080009417A1 (en) * 2006-07-05 2008-01-10 General Electric Company Coating composition, article, and associated method
JP2010097961A (ja) * 2007-01-10 2010-04-30 Shin-Etsu Chemical Co Ltd 静電吸着装置
JP4348408B2 (ja) * 2007-03-29 2009-10-21 パナソニック株式会社 半導体装置の製造方法
US8414704B2 (en) * 2008-01-08 2013-04-09 Ngk Insulators, Ltd. Bonding structure and semiconductor device manufacturing apparatus
JP5143029B2 (ja) * 2008-01-08 2013-02-13 日本碍子株式会社 接合構造及び半導体製造装置
JP6140457B2 (ja) * 2013-01-21 2017-05-31 東京エレクトロン株式会社 接着方法、載置台及び基板処理装置
CN104185317B (zh) * 2014-08-14 2016-09-07 厦门格睿伟业电子科技有限公司 一种双层包压陶瓷发热管
US20220102597A1 (en) * 2020-09-28 2022-03-31 Tek Beng Low Light emitting devices having profiled side surfaces
CN113734420B (zh) * 2021-08-30 2023-05-30 哈尔滨工业大学 一种静电吸附式无缝变刚度结构、机构及控制方法
CN113838948B (zh) * 2021-09-27 2023-11-10 平煤隆基新能源科技有限公司 一种降低管式perc电池划伤的工艺

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267353A (en) 1975-12-01 1977-06-03 Hitachi Ltd Electrostatic chuck
JPS59124140A (ja) 1982-12-29 1984-07-18 Fujitsu Ltd 静電吸着装置
JP2779052B2 (ja) 1990-09-13 1998-07-23 信越化学工業株式会社 複層セラミックス・ヒーター
JP3699349B2 (ja) 1990-12-25 2005-09-28 日本碍子株式会社 ウエハー吸着加熱装置
US5155652A (en) 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
JP3081279B2 (ja) 1991-06-03 2000-08-28 電気化学工業株式会社 ホットプレート
JP3155792B2 (ja) 1991-11-01 2001-04-16 電気化学工業株式会社 ホットプレート
JP2749759B2 (ja) 1993-06-23 1998-05-13 信越化学工業株式会社 静電チャック付セラミックスヒーター
US5591269A (en) * 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
JPH07153825A (ja) * 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
JPH07307377A (ja) * 1993-12-27 1995-11-21 Shin Etsu Chem Co Ltd 静電チャック付セラミックスヒーター
JP3602901B2 (ja) * 1996-01-30 2004-12-15 京セラ株式会社 ウェハ保持部材とその製造方法
US5748436A (en) * 1996-10-02 1998-05-05 Advanced Ceramics Corporation Ceramic electrostatic chuck and method
JP4236292B2 (ja) * 1997-03-06 2009-03-11 日本碍子株式会社 ウエハー吸着装置およびその製造方法
WO1999059201A1 (en) * 1998-05-11 1999-11-18 Applied Materials Inc Polished ceramic chuck for low backside particles in semiconductor plasma processing
JP3808286B2 (ja) * 2000-06-07 2006-08-09 住友大阪セメント株式会社 静電チャック
KR20020046214A (ko) * 2000-12-11 2002-06-20 어드밴스드 세라믹스 인터내셔날 코포레이션 정전척 및 그 제조방법
US20030107865A1 (en) * 2000-12-11 2003-06-12 Shinsuke Masuda Wafer handling apparatus and method of manufacturing the same

Also Published As

Publication number Publication date
EP1513191A3 (de) 2006-03-22
EP1513191A2 (de) 2005-03-09
JP4309714B2 (ja) 2009-08-05
US6949726B2 (en) 2005-09-27
US20050045619A1 (en) 2005-03-03
JP2005072066A (ja) 2005-03-17

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