CN113838948B - 一种降低管式perc电池划伤的工艺 - Google Patents
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Abstract
本发明涉及太阳能电池制造领域，尤其涉及一种降低管式PERC电池划伤的工艺，包括以下步骤：开始、充氮、放舟、升温、预抽、主抽、检漏、抽真空、恒温、恒压、淀积、抽真空、清洗、恒温一、恒温二、充氮一、取舟、结束，利用此工艺无需设备改造与新增投入以及石墨舟改造，在原有镀背面氮化硅膜的管式PECVD设备上，通过调整抽空步压力及抽速，工艺温度、出舟前充氮步增加两步恒温，即为了缓慢回压，即可解决管式PECVD机台EL划伤比例偏高的问题；与现有工艺相比，本发明产生的EL划伤比例降低一半左右，可积极推动PERC电池的技术创新和规模化生产，具有较好的经济效益和社会效益。
Description
技术领域
本发明涉及太阳能电池制造领域，尤其涉及一种降低管式PERC电池划伤的工艺。
背景技术
PERC（Passivated Emitter and Rear Cell）技术，即钝化发射极和背面电池，利用Al2O3等钝化材料对电池背面进行钝化，可以有效降低背表面复合，提高开路电压(Voc)，增加背表面反射，提高短路电流(Isc)，从而提升电池转换效率。双面PERC保持原先单面PERC的高转换效率，同时背面也可以发电，将双面PERC电池封装成双面双玻发电组件可显著地降低了光伏系统的度电成本，再次提升了PERC电池的竞争力。相对于常规电池，PERC电池仅增加两步工艺过程：背面沉积钝化膜和背面开槽，背面钝化膜的制备是PERC电池的核心工艺步骤。氧化铝（Al2O3）由于具备较高的电荷密度，可以对P型表面提供良好的钝化，目前被广泛应用于PERC电池量产的背面钝化材料。为了完全满足背面钝化条件，还需要在氧化铝表面覆一层氮化硅（SiNx）膜，以保护背部钝化膜并保证电池背面的光学性能，故PERC电池背面钝化多采Al2O3/SiNx双层结构。背钝化方面目前有PECVD和ALD（原子层沉积）两种技术路线，ALD因TMA耗量少、钝化质量高的优势在市场中占有较大份额，但需搭配PECVD设备同时使用，氧化铝和氮化硅需要分别沉积，在使用管式PECVD设备制备背面氮化硅膜的制程中，硅片通过三个卡点固定在石墨舟片上，硅片正面与石墨舟片接触，在抽真空、升温、充氮回常压工艺过程硅片因炉管内气压及热量变化会收缩或膨胀，硅片会与石墨舟片发生摩擦，硅片正面挨着石墨舟片导致产生划伤，严重影响产线良率。
发明内容
本发明的目的在于无需进行设备及石墨舟的改造，提供一种降低管式PERC电池划伤的工艺以提升电池生产的良率。
本发明是通过以下技术方案实现的：一种降低管式PERC电池划伤的工艺，包括以下步骤：开始、充氮、放舟、升温、预抽、主抽、检漏、抽真空、恒温、恒压、淀积、抽真空、清洗、恒温一、恒温二、充氮一、取舟、结束。
进一步地，所述开始、充氮、放舟、取舟和结束步骤的温度设定为490℃。
进一步地，所述升温、预抽、主抽、检漏、抽真空、恒温、恒压、淀积、抽真空、清洗、恒温一、恒温二和充氮一步骤的温度设定为450℃。
进一步地，所述预抽步骤的设定底压为60pa，时间为250s。
进一步地，所述主抽步骤的设定底压为0Pa，时间为40s。
进一步地，所述清洗步骤的氮气流量为10000sccm。
进一步地，所述恒温一步骤为：打开氮气恒流阀，氮气流量设定为5000sccm，压力为1200pa，时间为30s。
进一步地，所述恒温二步骤为：打开氮气恒流阀，氮气流量设定为30000sccm，压力为35000pa，时间为90s。
进一步地，所述充氮一的氮气流量设定为15000sccm，压力为常压。
本发明的有益效果在于：使用本发明所提供的工艺，无需设备改造与新增投入以及石墨舟改造，在原有镀背面氮化硅膜的管式PECVD设备上，通过调整抽空步压力及抽速，工艺温度、出舟前充氮步增加两步恒温，即为了缓慢回压，即可解决管式PECVD机台EL划伤比例偏高的问题；与现有工艺相比，本发明产生的EL划伤比例降低一半左右，可积极推动PERC电池的技术创新和规模化生产，具有较好的经济效益和社会效益。
具体实施方式
下面将结合发明实施例，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1
该降低管式PERC电池划伤的工艺，包括以下步骤：
开始：将插满ALD工序后硅片的石墨舟经自动化搬运至管式PECVD设备炉管，炉内温度设定为490℃；
充氮：炉管通入高纯氮气，氮气流量为5000sccm，直至炉管压力达到常压开启炉门，炉内温度设定为490℃；
放舟：将石墨舟由陶瓷桨送至炉管内部放于支撑机构，关闭炉门，炉内温度设定为490℃；
升温：通过加热控制系统对炉管进行加热，炉内温度设定为450℃；
预抽：打开预抽阀对内置石墨舟的炉管进行抽真空，设定底压为60pa，时间为250s，炉内温度设定为450℃；
主抽：打开主抽阀、预抽阀对内置石墨舟的炉管进行抽真空，设定底压为0pa，时间为40s，炉内温度设定为450℃；
检漏：检测炉管密封性；
抽真空：打开主抽阀、预抽阀对内置石墨舟的炉管进行抽真空，设定底压为0pa，时间为20s，炉内温度设定为450℃；
恒温：使炉管内部温度稳定在设定值450℃；
恒压：通入硅烷、氨气，使炉管压力稳定在设定值；
淀积：开启射频电源，电离硅烷、氨气在硅片表面沉积所需的氮化硅薄膜；
抽真空：关闭射频电源，停止硅烷、氨气通入，打开主抽阀、预抽阀将反应残留的尾气抽出炉管；
清洗：打开氮气恒流阀，氮气流量设定为10000sccm，稀释管路及炉管内的残留气体并由真空泵抽走；
恒温一：关闭主抽阀、预抽阀，打开氮气恒流阀，氮气流量设定为5000sccm，压力为1200pa，时间为30s；
恒温二：打开氮气恒流阀，氮气流量设定为30000sccm，压力为35000pa，时间为90s；
充氮一：打开氮气恒流阀、充氮阀，恒流阀支路氮气流量设定为15000sccm，压力为常压；
取舟：将石墨舟拉出炉管，炉内温度设定为490℃；
结束：炉内温度设定为490℃，工艺结束运行。
实施例2
开始：将插满ALD工序后硅片的石墨舟经自动化搬运至管式PECVD设备炉管，炉内温度设定为520℃；
充氮：炉管通入高纯氮气，氮气流量为5000sccm，直至炉管压力达到常压开启炉门，炉内温度设定为520℃；
放舟：将石墨舟由陶瓷桨送至炉管内部放于支撑机构，关闭炉门，炉内温度设定为520℃；
升温：通过加热控制系统对炉管进行加热，炉内温度设定为500℃；
预抽：打开预抽阀对内置石墨舟的炉管进行抽真空，设定底压为700pa，时间为100s，炉内温度设定为500℃；
主抽：打开主抽阀、预抽阀对内置石墨舟的炉管进行抽真空，设定底压为0pa，时间为100s，炉内温度设定为500℃；
检漏：检测炉管密封性；
抽真空：打开主抽阀、预抽阀对内置石墨舟的炉管进行抽真空，设定底压为0pa，时间为20s，炉内温度设定为500℃；
恒温：使炉管内部温度稳定在设定值500℃；
恒压：通入硅烷、氨气，使炉管压力稳定在设定值；
淀积：开启射频电源，电离硅烷、氨气在硅片表面沉积所需的氮化硅薄膜；
抽真空：关闭射频电源，停止硅烷、氨气通入，打开主抽阀、预抽阀将反应残留的尾气抽出炉管；
清洗：打开氮气恒流阀，氮气流量为设定为20000sccm，稀释管路及炉管内的残留气体并由真空泵抽走；
恒温一：关闭主抽阀、预抽阀，打开氮气恒流阀，氮气流量设定为20000sccm，压力为600pa，时间为20s；
充氮一：打开氮气恒流阀、充氮阀，恒流阀支路氮气流量设定为30000sccm，压力为常压；
取舟：将石墨舟拉出炉管，炉内温度设定为520℃；
结束：炉内温度设定为520℃，工艺结束运行。
实施例3
开始：将插满ALD工序后硅片的石墨舟经自动化搬运至管式PECVD设备炉管，炉内温度设定为500℃；
充氮：炉管通入高纯氮气，氮气流量为5000sccm，直至炉管压力达到常压开启炉门，炉内温度设定为500℃；
放舟：将石墨舟由陶瓷桨送至炉管内部放于支撑机构，关闭炉门，炉内温度设定为500℃；
升温：通过加热控制系统对炉管进行加热，炉内温度设定为480℃；
预抽：打开预抽阀对内置石墨舟的炉管进行抽真空，设定底压为700pa，时间为100s，炉内温度设定为480℃；
主抽：打开主抽阀、预抽阀对内置石墨舟的炉管进行抽真空，设定底压为0pa，时间为100s，炉内温度设定为480℃；
检漏：检测炉管密封性；
抽真空：打开主抽阀、预抽阀对内置石墨舟的炉管进行抽真空，设定底压为0pa，时间为20s，炉内温度设定为480℃；
恒温：使炉管内部温度稳定在设定值480℃；
恒压：通入硅烷、氨气，使炉管压力稳定在设定值；
淀积：开启射频电源，电离硅烷、氨气在硅片表面沉积所需的氮化硅薄膜；
抽真空：打开主抽阀、预抽阀将反应残留的尾气抽出炉管；
清洗：打开氮气恒流阀，氮气流量为设定为10000sccm，稀释管路及炉管内的残留气体并由真空泵抽走；
恒温二：关闭主抽阀、预抽阀，打开氮气恒流阀，氮气流量设定为20000sccm，压力为10000pa，时间为80s；
充氮一：打开氮气恒流阀、充氮阀，恒流阀支路氮气流量设定为30000sccm，压力为常压；
取舟：将石墨舟拉出炉管，炉内温度设定为500℃；
结束：炉内温度设定为500℃，工艺结束运行。
比对实验方法：各取前道工序的产品进行对比实验，
实验组：使用实施例1的方法进行生产；
对照组1：使用实施例2的方法进行生产；
对照组2：使用实施例3的方法进行生产。
统计方法：每组每次各生产1000片进行跟踪数据统计，经过丝网印刷后分别统计EL划伤比，实验次数8次。
经试验统计后得出如下数据：
| 次数 | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 均值 |
| 实施例1 | 0.76% | 0.53% | 0.64% | 0.45% | 0.99% | 0.47% | 0.43% | 0.63% | 0.61% |
| 实施例2 | 1.51% | 1.02% | 1.30% | 0.92% | 1.98% | 0.95% | 0.87% | 1.21% | 1.22% |
| 实施例3 | 1.10% | 0.72% | 0.95% | 0.71% | 1.14% | 0.62% | 0.73% | 0.88% | 0.86% |
通过8次跟踪显示采用实施例1划伤比远小于实施例2、3的划伤比，使用实施例1中所公开的制备工艺可以极大的提升电池生产良率。
最后应说明的是：以上所述仅为本发明的优选实施例而已，并不用于限制本发明，尽管参照前述实施例对本发明进行了详细的说明，对于本领域的技术人员来说，其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (1)
1.一种降低管式PERC电池划伤的工艺，其特征在于，包括以下步骤：开始、充氮、放舟、升温、预抽、主抽、检漏、抽真空、恒温、恒压、淀积、抽真空、清洗、恒温一、恒温二、充氮一、取舟、结束，具体为：
开始：将插满ALD工序后硅片的石墨舟经自动化搬运至管式PECVD设备炉管，炉内温度设定为490℃；
升温：通过加热控制系统对炉管进行加热，炉内温度设定为450℃；
预抽：打开预抽阀对内置石墨舟的炉管进行抽真空，设定底压为60pa，时间为250s，炉内温度设定为450℃；
主抽：打开主抽阀、预抽阀对内置石墨舟的炉管进行抽真空，设定底压为0pa，时间为40s，炉内温度设定为450℃；
恒压：通入硅烷、氨气，使炉管压力稳定在设定值；
淀积：开启射频电源，电离硅烷、氨气在硅片表面沉积所需的氮化硅薄膜；
抽真空：关闭射频电源，停止硅烷、氨气通入，打开主抽阀、预抽阀将反应残留的尾气抽出炉管；
清洗：打开氮气恒流阀，氮气流量设定为10000sccm，稀释管路及炉管内的残留气体并由真空泵抽走；
恒温一：关闭主抽阀、预抽阀，打开氮气恒流阀，氮气流量设定为5000sccm，压力为1200pa，时间为30s；
恒温二：打开氮气恒流阀，氮气流量设定为30000sccm，压力为35000pa，时间为90s；
充氮一：打开氮气恒流阀、充氮阀，恒流阀支路氮气流量设定为15000sccm，压力为常压；
所述开始、充氮、放舟、取舟和结束步骤的温度设定为490℃；
所述升温、预抽、主抽、检漏、抽真空、恒温、恒压、淀积、抽真空、清洗、恒温一、恒温二和充氮一步骤的温度设定为450℃。
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| CN110449409A (zh) * | 2019-08-15 | 2019-11-15 | 平煤隆基新能源科技有限公司 | 一种避免pecvd工序中石墨舟印的处理工艺 |
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