CN107681018B - 一种太阳能电池片的低压氧化工艺 - Google Patents
一种太阳能电池片的低压氧化工艺 Download PDFInfo
- Publication number
- CN107681018B CN107681018B CN201710829538.7A CN201710829538A CN107681018B CN 107681018 B CN107681018 B CN 107681018B CN 201710829538 A CN201710829538 A CN 201710829538A CN 107681018 B CN107681018 B CN 107681018B
- Authority
- CN
- China
- Prior art keywords
- pressure
- temperature
- low
- furnace
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 48
- 230000003647 oxidation Effects 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 54
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 239000000969 carrier Substances 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 31
- 238000002161 passivation Methods 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Uoc(v) | Isc(A) | Rs(Ω) | Rsh(Ω) | FF(%) | NCell | |
实施例1 | 0.6370 | 8.9335 | 0.0024 | 160.7291 | 78.6644 | 0.1839 |
对比例1 | 0.6341 | 8.9249 | 0.0024 | 235.3640 | 78.6453 | 0.1829 |
实施例2 | 0.6392 | 8.8977 | 0.0022 | 281.9106 | 79.0627 | 0.1848 |
对比例2 | 0.6369 | 8.8526 | 0.0022 | 298.4683 | 79.1945 | 0.1835 |
实施例3 | 0.6397 | 8.9784 | 0.0026 | 234.4012 | 78.7033 | 0.1858 |
对比例3 | 0.6365 | 8.9320 | 0.0024 | 263.1433 | 78.9759 | 0.1845 |
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710829538.7A CN107681018B (zh) | 2017-09-14 | 2017-09-14 | 一种太阳能电池片的低压氧化工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710829538.7A CN107681018B (zh) | 2017-09-14 | 2017-09-14 | 一种太阳能电池片的低压氧化工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107681018A CN107681018A (zh) | 2018-02-09 |
CN107681018B true CN107681018B (zh) | 2020-03-20 |
Family
ID=61136848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710829538.7A Active CN107681018B (zh) | 2017-09-14 | 2017-09-14 | 一种太阳能电池片的低压氧化工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107681018B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108598212B (zh) * | 2018-03-30 | 2020-03-20 | 横店集团东磁股份有限公司 | 一种太阳能电池钝化的方法 |
CN108878289B (zh) * | 2018-06-15 | 2021-09-14 | 常州亿晶光电科技有限公司 | 高效电池退火工艺 |
CN109378359A (zh) * | 2018-09-16 | 2019-02-22 | 苏州润阳光伏科技有限公司 | 单晶热氧化电池制造工艺 |
CN110690319B (zh) * | 2019-08-30 | 2021-06-25 | 江苏顺风新能源科技有限公司 | 一种高效单晶硅电池的氧化退火工艺 |
CN112054091A (zh) * | 2020-08-28 | 2020-12-08 | 江苏润阳悦达光伏科技有限公司 | 一种高效太阳能perc-se电池的氧化工艺 |
CN112466985B (zh) * | 2020-10-30 | 2022-11-11 | 江苏润阳悦达光伏科技有限公司 | 改善扩散方阻单片均匀度的低压扩散工艺 |
CN112420873A (zh) * | 2020-11-30 | 2021-02-26 | 中建材浚鑫科技有限公司 | 一种适用于m10尺寸的电池片的热氧化方法 |
CN112670374A (zh) * | 2020-12-31 | 2021-04-16 | 广东爱旭科技有限公司 | 一种晶硅太阳能电池低压退火方法 |
CN113206002B (zh) * | 2021-03-13 | 2024-01-12 | 普乐新能源科技(泰兴)有限公司 | 一种用于制备高均匀性的超薄氧化层的方法 |
CN113782636A (zh) * | 2021-08-05 | 2021-12-10 | 天津爱旭太阳能科技有限公司 | 晶体硅太阳能电池的退火方法和晶体硅太阳能电池 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106653939A (zh) * | 2016-11-17 | 2017-05-10 | 横店集团东磁股份有限公司 | 一种应用于晶硅太阳能电池的热氧化工艺 |
CN106784153A (zh) * | 2016-12-30 | 2017-05-31 | 常州亿晶光电科技有限公司 | 太阳能电池片低压扩散工艺 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8268287B2 (en) * | 2010-05-12 | 2012-09-18 | National Chung Cheng University | Zinc oxide nanorod thin film and method for making same |
CN103400891A (zh) * | 2013-07-08 | 2013-11-20 | 浙江晶科能源有限公司 | 一种背面钝化电池SiO2钝化层的制备方法 |
CN105070654B (zh) * | 2015-07-10 | 2018-02-13 | 上饶光电高科技有限公司 | 一种提高晶体硅太阳能电池效率的扩散工艺 |
-
2017
- 2017-09-14 CN CN201710829538.7A patent/CN107681018B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106653939A (zh) * | 2016-11-17 | 2017-05-10 | 横店集团东磁股份有限公司 | 一种应用于晶硅太阳能电池的热氧化工艺 |
CN106784153A (zh) * | 2016-12-30 | 2017-05-31 | 常州亿晶光电科技有限公司 | 太阳能电池片低压扩散工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN107681018A (zh) | 2018-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107681018B (zh) | 一种太阳能电池片的低压氧化工艺 | |
CN110164759B (zh) | 一种区域性分层沉积扩散工艺 | |
CN111384210B (zh) | 一种perc叠加se的高开压扩散高方阻工艺 | |
US8283559B2 (en) | Silicon-based dielectric stack passivation of Si-epitaxial thin-film solar cells | |
CN106711239A (zh) | Perc太阳能电池的制备方法及其perc太阳能电池 | |
CN109004038B (zh) | 太阳能电池及其制备方法和光伏组件 | |
CN115000246B (zh) | P型钝化接触电池制备方法及钝化接触电池 | |
CN109786511B (zh) | 一种适用于选择性发射极的扩散方法 | |
WO2022166040A1 (zh) | 一种适用于hbc电池的硼扩散方法 | |
US20240145611A1 (en) | Method for preparing tunnel oxide layer and amorphous silicon thin film, and topcon cell | |
CN114520276A (zh) | 钝化接触电池及其制备工艺 | |
CN114823969A (zh) | 一种提升钝化接触结构性能的低温氢等离子体辅助退火方法和TOPCon太阳能电池 | |
CN112164733A (zh) | 一种太阳能电池扩散深结制备方法 | |
CN112670374A (zh) | 一种晶硅太阳能电池低压退火方法 | |
CN117276055A (zh) | 一种n型硅片的硼扩散工艺及n型硅片、太阳电池 | |
CN104701390A (zh) | 太阳能电池背面钝化方法 | |
CN115995381A (zh) | 一种硼扩散工艺 | |
CN102169924A (zh) | 晶体硅太阳能电池及其钝化方法 | |
CN111129171B (zh) | 一种用于碱抛的掩盖膜及其制备方法 | |
US7629236B2 (en) | Method for passivating crystal silicon surfaces | |
CN113594267A (zh) | 一种形成氧化层的方法 | |
CN113555468A (zh) | 一种提升n型硅片硼扩散方阻均匀性的工艺 | |
Choi et al. | Chemical HF treatment for rear surface passivation of crystalline silicon solar cells | |
CN111341878A (zh) | 一种晶硅太阳能电池片的制备方法 | |
CN111628044A (zh) | 一种硅太阳能电池的表面钝化处理方法和系统 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Low pressure oxidation process of solar cell Effective date of registration: 20211023 Granted publication date: 20200320 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2021330002002 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230628 Granted publication date: 20200320 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2021330002002 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |