EP0812114A1 - Detecteur d'image a semi-conducteurs, procede d'actionnement de celui-ci, dispositif pour camera a semi-conducteurs et camera a semi-conducteurs - Google Patents

Detecteur d'image a semi-conducteurs, procede d'actionnement de celui-ci, dispositif pour camera a semi-conducteurs et camera a semi-conducteurs Download PDF

Info

Publication number
EP0812114A1
EP0812114A1 EP96941828A EP96941828A EP0812114A1 EP 0812114 A1 EP0812114 A1 EP 0812114A1 EP 96941828 A EP96941828 A EP 96941828A EP 96941828 A EP96941828 A EP 96941828A EP 0812114 A1 EP0812114 A1 EP 0812114A1
Authority
EP
European Patent Office
Prior art keywords
signal
transfer pulses
horizontal
group
pixels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP96941828A
Other languages
German (de)
English (en)
Other versions
EP0812114B1 (fr
EP0812114A4 (fr
Inventor
Tomio-Sony Corporation Ishigami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of EP0812114A1 publication Critical patent/EP0812114A1/fr
Publication of EP0812114A4 publication Critical patent/EP0812114A4/fr
Application granted granted Critical
Publication of EP0812114B1 publication Critical patent/EP0812114B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14868—CCD or CID colour imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80—Camera processing pipelines; Components thereof
    • H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/048—Picture signal generators using solid-state devices having several pick-up sensors
    • H04N2209/049—Picture signal generators using solid-state devices having several pick-up sensors having three pick-up sensors

Definitions

  • the present invention relates to a solid-state imaging device which includes a charge transfer unit comprising a CCD, for example, for producing an image output signal based on all-pixel reading principles or noninterlaced principles, the solid-state imaging device being capable of selectively producing an output image signal based on noninterlaced principles, a method of driving the solid-state imaging device for such a charge transfer process, a camera device incorporating the solid-state imaging device, and a camera system for storing an image signal based on the noninterlaced principles (hereinafter referred to as a "noninterlaced signal”) from the camera device into an external memory and displaying a noninterlaced signal from the camera device on a monitor screen.
  • a charge transfer unit comprising a CCD
  • the solid-state imaging device being capable of selectively producing an output image signal based on noninterlaced principles
  • a method of driving the solid-state imaging device for such a charge transfer process a camera device incorporating the solid-state imaging device, and a camera system for storing
  • camera devices for imaging and displaying subjects on monitor devices have solid-state imaging devices for producing an output image signal based on interlaced principles because the monitor devices usually employ interlaced principles such as NTSC or the like.
  • an CCD image sensor of the interline transfer type has an imaging unit 103 comprising a matrix of photodetectors 101 for photoelectrically converting incident light into electric charges depending on the amount of the incident light and a number of vertical shift registers 102 shared by columns of photodetectors 101 and arranged along rows of photodetectors 101.
  • the image sensor also has a horizontal shift register 104 shared by the vertical shift registers 102.
  • the horizontal shift register 104 has a final stage connected to an output unit 105 which has a charge-to-voltage converter comprising a floating-diffusion device or a floating-gate device and an output amplifier for amplifying an output signal from the charge-to-voltage converter.
  • first and second lines and third and fourth lines are mixed with each other in the vertical shift registers 102, and transferred to the horizontal shift register 104.
  • second and third lines and fourth and fifth lines are mixed with each other in the vertical shift registers 102, and transferred to the horizontal shift register 104.
  • FIG. 2 One proposed image sensor for reading all pixels has a vertical transfer unit comprising a 3-layer, 3-phase CCD as shown in FIG. 2 of the accompanying drawings. Those parts shown in FIG. 2 which are identical to those shown in FIG. 1 are denoted by identical reference numerals, and will not be described below.
  • a signal charge "e” is transferred to and stored in a potential well formed beneath a second vertical transfer electrode 111b at a time t1.
  • a potential well is formed beneath a first vertical transfer electrode 111a.
  • the signal charge "e” after it is read is transferred to and stored in the potential wells that are consecutively formed beneath the first and second vertical transfer electrodes 111a, 111b.
  • a potential well is formed beneath a third vertical transfer electrode 111c.
  • the signal charge "e” is transferred to and stored in the potential wells that are consecutively formed beneath the first and third vertical transfer electrodes 111a, 111c.
  • the signal charge "e” that has been stored in the second vertical transfer electrode 111b in the previous stage is transferred to the second vertical transfer electrode 111b in the next stage.
  • the first through third vertical transfer pulses ⁇ V1 ⁇ ⁇ V3 are applied respectively to the vertical transfer electrodes 11a ⁇ 111c, independently transferring the signal charges "e" of all the pixels successively in the vertical direction.
  • imaged information is displayed on a monitor device to determine an image angle.
  • a monitor device for use with such a solid-state imaging device should preferably be of a noninterlaced type.
  • an imaging signal of one frame is stored in a memory (frame memory), and thereafter an interlaced signal is outputted.
  • the signal charges of the pixels are supplied in each line to the horizontal shift register, so that signal charges of an nth line, for example, are transferred to and stored in the horizontal shift register.
  • the horizontal transfer pulses are supplied to the horizontal shift register to shift the signal charges in the horizontal shift register by pixels corresponding to a horizontal shift of the color filters. Consequently, the repetitive pattern of colors of signal charges in a range corresponding to the imaging unit and the repetitive pattern of colors of signal charges of an (n + 1)th line stored in a final stage, for example, of the imaging unit, out of the signal charges of the nth line stored in the horizontal shift register, become the same as each other.
  • the group of first transfer pulses is supplied from the first timing generating circuit to the solid-state imaging device in a horizontal blanking period, causing the solid-state imaging device to output a noninterlaced signal.
  • the group of second transfer pulses is supplied from the second timing generating circuit to the solid-state imaging device in a horizontal blanking period, causing the solid-state imaging device to output an interlaced signal. Therefore, the camera device which incorporates an all-pixel reading image sensor or an image sensor for outputting a noninterlaced signal is capable of selectively outputting an interlaced signal without the use of a frame memory or the like as an external circuit.
  • the camera device comprises a solid-state imaging device having an imaging unit comprising a matrix of photodetectors as pixels for photoelectrically converting incident light from a subject into signal charges depending on the amount of the incident light, and color filters arranged on the imaging unit in a predetermined pattern corresponding to the pixels, a first timing generating circuit for generating a group of first transfer pulses for transferring signals charges stored in the respective pixels in a horizontal blanking period in each line to a horizontal shift register, based on a reference clock signal, a second timing generating circuit for generating a group of second transfer pulses for transferring signals charges stored in the respective pixels in the horizontal blanking period in each two lines to the horizontal shift register, based on the reference clock signal, and selecting means for selecting the group of second transfer pulses as a group of transfer pulses to be supplied to the solid-state imaging device in normal operation, and selecting the group of first transfer pulses as a group of transfer pulses to be supplied to the solid-state imaging device based on an interrupt signal from an external shutter control key.
  • the external memory device has a memory for storing an imaging signal of at least one frame which is outputted from the solid-state imaging device, and the display device is arranged to convert the imaging signal outputted from the solid-state imaging device into a video signal and displaying the video signal on a screen.
  • the photodetectors as the pixels photoelectrically convert incident light from a subject into signal charges depending on the amount of the incident light. Thereafter, in a horizontal blanking period, the signal charges stored in the photodetectors are successively transferred to the horizontal shift register.
  • the group of second transfer pulses from the second timing generating circuit is selected by the selecting means, and supplied to the solid-state imaging device.
  • the solid-state imaging device based on the group of second transfer pulses supplied from the second timing generating circuit through the selecting means, the signal charges stored in the pixels are successively transferred in each line to the horizontal shift register, and the solidstate imaging device outputs a noninterlaced imaging signal.
  • the solid-state imaging device outputs an interlaced imaging signal having odd- and even-numbered fields.
  • an image sensor has an imaging unit 3 comprising a matrix of photodetectors 1 for photoelectrically converting incident light into electric charges depending on the amount of the incident light and a number of vertical shift registers 2 shared by columns of photodetectors 1 and arranged along rows of photodetectors 1.
  • the image sensor also has a horizontal shift register 4 disposed adjacent to the imaging unit 3 and shared by the vertical shift registers 2.
  • the p-type well region 22 is formed on a surface of the n-type silicon substrate 21, and the n-type impurity-diffused region 23 which constitutes the photodetector 1 is formed in a position shallower than the well region 22.
  • the image sensor thus constructed functions as a so-called electronic shutter.
  • a potential barrier (overflow barrier) in the p-type well region 22 is lowered, allowing a charge (in this case, electrons) stored in the photodetector 1 to flow over the overflow barrier vertically, i.e., drain to the silicon substrate 21. Therefore, a period from the time when the shutter pulse is finally applied to the time when the charge is read serves as a virtual exposure period thereby to prevent a drawback such as an afterimage lag or the like.
  • the n-type impurity-diffused region 23 and the p-type well region 22 jointly form a pn junction serving as a photodiode.
  • the n-type impurity-diffused region 23 and the readout gate 28 jointly form a pn junction serving as a photodiode.
  • the n-type impurity-diffused region 23 and the channel stopper region 25 jointly form a pn junction serving as a photodiode.
  • the n-type impurity-diffused region 23 and the p-type hole storage region 26 jointly form a pn junction serving as a photodiode.
  • the image sensor includes a three-layer gate insulating film 29 comprising an SiO2 film, an Si3N4 film, and an SiO2 film, for example, and disposed on the transfer channel region 24, the channel stopper region 25, and the readout gate 28, and three transfer electrodes (only a representative transfer electrode 30 as a first polycrystalline silicon layer is shown in FIG. 6) as first through third polycrystalline silicon layers are disposed on the gate insulating film 29.
  • the transfer channel region 24, the channel stopper region 25, and the readout gate 28 jointly serve as the vertical shift register 2.
  • a planarization film, color filters, and a micro condensing lens on the protective film 34 are omitted from illustration for the sake of brevity.
  • a process of reading signal charges from the image sensor particularly, a process of transferring signal charges vertically after the signal charges have been read into the vertical shift registers 2, will be described below with reference to timing charts and diagrams shown in FIGS. 8 through 12.
  • the signal charge "e” that has been stored in the second vertical transfer electrode 41b in the previous stage is transferred to the second vertical transfer electrode 41b in the next stage.
  • the first through third vertical transfer pulses ⁇ V1 ⁇ ⁇ V3 are applied respectively to the vertical transfer electrodes 41a ⁇ 41c, independently transferring the signal charges "e” of all the pixels successively in the vertical direction.
  • the first through third vertical transfer pulses ⁇ V1 ⁇ ⁇ V3 that are supplied to the vertical transfer electrodes 41a ⁇ 41c have two signal configurations.
  • the first signal configuration as shown in FIG. 10
  • the first through third vertical transfer pulses ⁇ V1 ⁇ ⁇ V3 shown in FIG. 8 are outputted only once in a horizontal blanking period.
  • the second signal configuration as shown in FIG. 11, the first through third vertical transfer pulses ⁇ V1 ⁇ ⁇ V3 shown in FIG. 8 are outputted twice in a horizontal blanking period.
  • the first and second horizontal transfer pulses ⁇ H1, ⁇ H2 are outputted, two pulses each, after the first through third vertical transfer pulses ⁇ V1 ⁇ ⁇ V3 are outputted in a first cycle.
  • the signal charges of two pixels stored in the horizontal shift register 4 are transferred (shifted) to the output unit 5.
  • a process of transferring the signal charges according to the second signal configuration will specifically be described below with reference to FIGS. 11 and 12. Since the first through third vertical transfer pulses ⁇ V1 ⁇ ⁇ V3 in the first cycle are supplied to the imaging unit 3, the signal charges of the pixels are transferred independently of each other in each line to the horizontal shift register 4 at a time t11 in FIG. 11. As shown in FIG. 12A, signal charges of an nth line, for example, are transferred to and stored in the horizontal shift register 4.
  • "R” represents a signal charge of a red pixel
  • "B” a signal charge of a blue pixel
  • G a signal charge of a green pixel.
  • the color filters used in the image sensor are of the G-stripe R/B grid coding pattern as shown in FIG. 7. It can be seen that when the color filters along the odd-numbered line are spatially shifted two pixels toward the output unit 5, the repetitive pattern of the colors along the odd-numbered line becomes the same as the repetitive pattern of the colors along the even-numbered line.
  • the output unit 5 outputs an R signal, a G signal, a B signal, and a G signal in the order named, making it possible to generate a color signal to produce a video signal in a subsequent signal processing stage. Accordingly, it is possible to output a field image with half as many as scanning lines in the vertical direction by employing the image sensor driving system according to the second signal configuration.
  • signal charges from the first and second lines are mixed with each other in horizontal shift register 4.
  • signal charges from the second and third lines are mixed with each other in horizontal shift register 4.
  • the output terminal 9 of the output unit 3 outputs an interlaced imaging signal S having odd- and even-numbered fields.
  • a transfer pulse supply circuit system for supplying various transfer pulses to the image sensor according to the embodiment will be described with reference to FIG. 13.
  • the transfer pulse supply circuit system, an image sensor 51, and an imaging lens 52 serve as main components of a camera device according to an embodiment of the present invention.
  • the transfer pulse supply circuit system further has, in addition to the above circuits, a shutter pulse reference signal generating circuit 60 for generating a reference signal Ps to produce an electronic shutter pulse in synchronism with a horizontal blanking period, and a substrate application signal generating circuit 61 for generating a shutter pulse based on the reference signal Ps from the shutter pulse reference signal generating circuit 60, the reference clock signal Pc, and a shutter control signal Ss from the system controller 58, and generating a substrate application signal Vs by adding the shutter pulse to a substrate potential.
  • a shutter pulse reference signal generating circuit 60 for generating a reference signal Ps to produce an electronic shutter pulse in synchronism with a horizontal blanking period
  • a substrate application signal generating circuit 61 for generating a shutter pulse based on the reference signal Ps from the shutter pulse reference signal generating circuit 60, the reference clock signal Pc, and a shutter control signal Ss from the system controller 58, and generating a substrate application signal Vs by adding the shutter pulse to a substrate potential
  • control keys on a control panel 63 external to the camera device through an interface circuit 62. While the control keys include many various control keys, only an NIL control key 64A for indicating a noninterlaced signal and an IL control key 64B for indicating an interlaced signal are illustrated in FIG. 13.
  • the first switching circuit 59A selects the first through third vertical transfer pulses ⁇ V1 ⁇ ⁇ V3 from the first vertical timing generating circuit 54A.
  • the first through third vertical transfer pulses ⁇ V1 ⁇ ⁇ V3 are supplied through the vertical drive circuit 56 to the image sensor 51.
  • the image sensor 51 now outputs a noninterlaced signal SNIL.
  • an interrupt signal S2 produced by the IL control key 64B is supplied through the interface circuit 62 to the system controller 58.
  • the system controller 58 outputs a low-level switching control signal Ssw.
  • the first through third vertical transfer pulses ⁇ V1 ⁇ ⁇ V3 having the first signal configuration from the first vertical timing generating circuit 54A are supplied to the image sensor 51 in a horizontal blanking period, whereupon the image sensor 51 outputs a noninterlaced signal SNIL.
  • FIG. 14 An electronic camera system according to an embodiment of the present invention to which the above camera device is applied will be described below with reference to FIG. 14. Those parts of the camera system which are identical to those of the camera device shown in FIG. 13 are denoted by identical reference characters, and will not be described below.
  • the camera system has, in addition to a camera device 71 of the above structure, an external memory device 72, a display device 73, and a switching means 74.
  • the switching means 74 is incorporated in the camera device 71, for example.
  • the system controller 58 of the camera device 71 incorporated in the camera system differs partly from the system controller of the camera device shown in FIG. 13 in that it normally outputs a low-level switching control signal Ssw, and changes the level of the switching control signal Ssw to a high level when a shutter control key 75 of the control panel 63 is operated.
  • the external memory device 72 has a memory for storing at least a noninterlaced imaging signal SNIL of one frame which is outputted from the image sensor 51 of the camera device 71.
  • an A/D converter 75 for converting an imaging signal SNIL outputted from the image sensor 51 into digital imaging data DNIL
  • an image processing circuit 79 for adding a horizontal synchronizing signal, etc. to the imaging data DNIL from the A/D converter 75 and converting the imaging data DNIL into data for various image display modes, and outputting the data as image data VNIL.
  • a sampling process in the A/D converter 75 and an image data converting process in the image processing circuit 79 are carried out under timing control by a memory controller 76, for example.
  • the display device 73 comprises an image processing circuit 77 for converting an interlaced imaging signal SIL outputted from the image sensor 51 of the camera device 71 into a video signal, and a monitor 78 for displaying the video signal from the image processing circuit 77 on a screen thereof.
  • the image processing circuit 77 effects gamma correction and aperture correction on the imaging signal SIL and adding a horizontal synchronizing signal to the imaging signal SIL for thereby converting the imaging signal SIL into the video signal.
  • the movable contact 74c when the switching control signal Ssw is of a low level, the movable contact 74c is shifted to supply the interlaced signal SIL outputted from the image sensor 51 to the display device 73, and when the switching control signal Ssw is of a high level, the movable contact 74c is shifted to supply the noninterlaced signal SNIL outputted from the image sensor 51 to the A/D converter 75.
  • an interrupt signal produced by the shutter control key 65 is supplied through the interface circuit 62 to the system controller 58.
  • the system controller 58 outputs a high-level switching control signal Ssw.
  • the camera device has basically been described as comprising a single-panel camera device.
  • the camera device may comprise a two-panel camera device having two image sensors (first and second image sensors 51A, 51B).
  • first and second image sensors 51A, 51B are denoted by identical reference numerals.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
EP96941828A 1995-12-21 1996-12-11 Detecteur d'image a semi-conducteurs, procede d'actionnement de celui-ci, dispositif pour camera a semi-conducteurs et camera a semi-conducteurs Expired - Lifetime EP0812114B1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP33364495 1995-12-21
JP333644/95 1995-12-21
JP33364495A JP3511772B2 (ja) 1995-12-21 1995-12-21 固体撮像素子、固体撮像素子の駆動方法、カメラ装置及びカメラシステム
PCT/JP1996/003609 WO1997023999A1 (fr) 1995-12-21 1996-12-11 Detecteur d'image a semi-conducteurs, procede d'actionnement de celui-ci, dispositif pour camera a semi-conducteurs et camera a semi-conducteurs

Publications (3)

Publication Number Publication Date
EP0812114A1 true EP0812114A1 (fr) 1997-12-10
EP0812114A4 EP0812114A4 (fr) 2001-05-09
EP0812114B1 EP0812114B1 (fr) 2003-03-26

Family

ID=18268368

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96941828A Expired - Lifetime EP0812114B1 (fr) 1995-12-21 1996-12-11 Detecteur d'image a semi-conducteurs, procede d'actionnement de celui-ci, dispositif pour camera a semi-conducteurs et camera a semi-conducteurs

Country Status (10)

Country Link
US (1) US6198507B1 (fr)
EP (1) EP0812114B1 (fr)
JP (1) JP3511772B2 (fr)
KR (1) KR19980702357A (fr)
CN (1) CN1104804C (fr)
BR (1) BR9607044A (fr)
CA (1) CA2213250A1 (fr)
DE (1) DE69626970T2 (fr)
RU (1) RU2182405C2 (fr)
WO (1) WO1997023999A1 (fr)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7646398B2 (en) 2000-07-28 2010-01-12 Samsung Electronics Co., Ltd. Arrangement of color pixels for full color imaging devices with simplified addressing
US7689058B2 (en) 2001-05-09 2010-03-30 Samsung Electronics Co., Ltd. Conversion of a sub-pixel format data to another sub-pixel data format
US7701476B2 (en) 2002-09-13 2010-04-20 Samsung Electronics Co., Ltd. Four color arrangements of emitters for subpixel rendering
CN1870729B (zh) * 2005-05-26 2010-05-26 索尼株式会社 固态成像装置、其驱动方法、和成像设备
US7728802B2 (en) 2000-07-28 2010-06-01 Samsung Electronics Co., Ltd. Arrangements of color pixels for full color imaging devices with simplified addressing
US7755649B2 (en) 2001-05-09 2010-07-13 Samsung Electronics Co., Ltd. Methods and systems for sub-pixel rendering with gamma adjustment
US7755652B2 (en) 2002-01-07 2010-07-13 Samsung Electronics Co., Ltd. Color flat panel display sub-pixel rendering and driver configuration for sub-pixel arrangements with split sub-pixels
US7864194B2 (en) 2003-03-04 2011-01-04 Samsung Electronics Co., Ltd. Systems and methods for motion adaptive filtering
US7969456B2 (en) 2001-05-09 2011-06-28 Samsung Electronics Co., Ltd. Methods and systems for sub-pixel rendering with adaptive filtering
US8022969B2 (en) 2001-05-09 2011-09-20 Samsung Electronics Co., Ltd. Rotatable display with sub-pixel rendering
US8134583B2 (en) 2002-01-07 2012-03-13 Samsung Electronics Co., Ltd. To color flat panel display sub-pixel arrangements and layouts for sub-pixel rendering with split blue sub-pixels
US8144094B2 (en) 2003-06-06 2012-03-27 Samsung Electronics Co., Ltd. Liquid crystal display backplane layouts and addressing for non-standard subpixel arrangements
US8378947B2 (en) 2003-03-04 2013-02-19 Samsung Display Co., Ltd. Systems and methods for temporal subpixel rendering of image data
US8405692B2 (en) 2001-12-14 2013-03-26 Samsung Display Co., Ltd. Color flat panel display arrangements and layouts with reduced blue luminance well visibility

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3695082B2 (ja) * 1997-07-11 2005-09-14 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法および撮像装置
JPH11234569A (ja) * 1998-02-13 1999-08-27 Sony Corp 固体撮像装置の駆動方法及び固体撮像素子、並びにカメラ
JP4140077B2 (ja) * 1998-02-18 2008-08-27 ソニー株式会社 固体撮像素子の駆動方法及び固体撮像素子、並びにカメラ
US6999119B1 (en) * 1998-04-10 2006-02-14 Nikon Corporation Image-capturing element, image-capturing circuit for processing signal from image-capturing element, image-capturing device, driving method of image-capturing element
JP4171137B2 (ja) * 1999-06-08 2008-10-22 富士フイルム株式会社 固体撮像装置及びその制御方法
KR100388803B1 (ko) * 1999-07-14 2003-07-12 주식회사 하이닉스반도체 고체 촬상 소자 및 그 제조방법
JP4342095B2 (ja) * 1999-10-07 2009-10-14 富士フイルム株式会社 電荷転送装置、それを用いた固体撮像装置及びその制御方法
US7283142B2 (en) * 2000-07-28 2007-10-16 Clairvoyante, Inc. Color display having horizontal sub-pixel arrangements and layouts
US6950115B2 (en) * 2001-05-09 2005-09-27 Clairvoyante, Inc. Color flat panel display sub-pixel arrangements and layouts
JP2002320143A (ja) * 2001-04-23 2002-10-31 Olympus Optical Co Ltd 撮像装置
US7184085B2 (en) * 2001-08-20 2007-02-27 Fuji Photo Film Co., Ltd. Charge multiplying solid-state electronic image sensing device and method of controlling same
US20030117423A1 (en) * 2001-12-14 2003-06-26 Brown Elliott Candice Hellen Color flat panel display sub-pixel arrangements and layouts with reduced blue luminance well visibility
US7492379B2 (en) * 2002-01-07 2009-02-17 Samsung Electronics Co., Ltd. Color flat panel display sub-pixel arrangements and layouts for sub-pixel rendering with increased modulation transfer function response
JP2003299112A (ja) * 2002-03-29 2003-10-17 Fuji Photo Film Co Ltd デジタルカメラ
US6586789B1 (en) * 2002-10-07 2003-07-01 Lixin Zhao Pixel image sensor
US7046256B2 (en) * 2003-01-22 2006-05-16 Clairvoyante, Inc System and methods of subpixel rendering implemented on display panels
JP2004266369A (ja) * 2003-02-21 2004-09-24 Sony Corp 固体撮像装置およびその駆動方法
US7554590B2 (en) * 2003-02-26 2009-06-30 Digital Imaging Systems Gmbh Simultaneous readout of CMOS APS imagers
US6917368B2 (en) * 2003-03-04 2005-07-12 Clairvoyante, Inc. Sub-pixel rendering system and method for improved display viewing angles
FR2852770B1 (fr) * 2003-03-21 2005-05-27 Capteur d'image a cycle de lecture rapide
US7352374B2 (en) * 2003-04-07 2008-04-01 Clairvoyante, Inc Image data set with embedded pre-subpixel rendered image
JP4307138B2 (ja) * 2003-04-22 2009-08-05 キヤノン株式会社 光電変換装置、及び光電変換装置の制御方法
US7230584B2 (en) * 2003-05-20 2007-06-12 Clairvoyante, Inc Projector systems with reduced flicker
US7268748B2 (en) * 2003-05-20 2007-09-11 Clairvoyante, Inc Subpixel rendering for cathode ray tube devices
US20040233308A1 (en) * 2003-05-20 2004-11-25 Elliott Candice Hellen Brown Image capture device and camera
JP4212095B2 (ja) * 2003-07-15 2009-01-21 シャープ株式会社 固体撮像装置およびその駆動方法
KR100493900B1 (ko) * 2003-08-21 2005-06-10 삼성전자주식회사 사용자간 콘텐츠에 대한 권한정보의 공유방법
JP2005292784A (ja) * 2004-03-09 2005-10-20 Nikon Corp 測色機能を備えた測光装置およびその測光装置を備えたカメラ
US20050250821A1 (en) * 2004-04-16 2005-11-10 Vincent Sewalt Quaternary ammonium compounds in the treatment of water and as antimicrobial wash
US20050280726A1 (en) * 2004-06-18 2005-12-22 Eastman Kodak Company Image sensor for still or video photography
CN101064787B (zh) * 2006-04-29 2010-08-11 格科微电子（上海）有限公司 一种cmos图像传感器像素
JP2008028646A (ja) * 2006-07-20 2008-02-07 Fujifilm Corp Ｃｃｄ型固体撮像装置及びその駆動方法
US7893981B2 (en) * 2007-02-28 2011-02-22 Eastman Kodak Company Image sensor with variable resolution and sensitivity
JP2008252791A (ja) * 2007-03-30 2008-10-16 Fujifilm Corp Ｃｃｄ型固体撮像素子の駆動方法及び撮像装置
DE102007040114B4 (de) * 2007-08-24 2010-10-28 Robert Bosch Gmbh Farbmaske für einen Bildsensor einer Fahrzeugkamera
JP2009065478A (ja) * 2007-09-06 2009-03-26 Fujifilm Corp 固体撮像素子の駆動方法及び撮像装置
JP5328207B2 (ja) * 2008-04-01 2013-10-30 キヤノン株式会社 固体撮像装置
KR100924142B1 (ko) 2008-04-01 2009-10-28 삼성모바일디스플레이주식회사 평판표시장치, 이의 에이징 방법 및 점등 테스트 방법
JP5521441B2 (ja) * 2008-09-29 2014-06-11 ソニー株式会社 固体撮像装置とその駆動方法、並びに電子機器
JP5392533B2 (ja) * 2008-10-10 2014-01-22 ソニー株式会社 固体撮像素子、光学装置、信号処理装置及び信号処理システム
US8279317B2 (en) * 2009-09-30 2012-10-02 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US8279316B2 (en) * 2009-09-30 2012-10-02 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US8194164B2 (en) * 2009-09-30 2012-06-05 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US8314873B2 (en) * 2009-09-30 2012-11-20 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US20110074997A1 (en) * 2009-09-30 2011-03-31 Border John N Methods for capturing and reading out images from an image sensor
US8194166B2 (en) 2009-09-30 2012-06-05 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US8294803B2 (en) * 2009-09-30 2012-10-23 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
US8194165B2 (en) * 2009-09-30 2012-06-05 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
CN102667905A (zh) * 2009-11-30 2012-09-12 夏普株式会社 显示装置
CN101738827B (zh) * 2009-12-24 2012-07-04 北京优纳科技有限公司 一种usb数字工业相机
JP5578915B2 (ja) * 2010-04-01 2014-08-27 キヤノン株式会社 固体撮像装置及びその駆動方法
DE102010030108B4 (de) 2010-06-15 2014-12-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Farbbildsensor
CN102404515A (zh) * 2010-09-13 2012-04-04 联咏科技股份有限公司 影像感测装置
JP5960961B2 (ja) * 2010-11-16 2016-08-02 キヤノン株式会社 固体撮像素子及び撮像システム
JP2012142560A (ja) * 2010-12-15 2012-07-26 Canon Inc 固体撮像装置およびその製造方法ならびにカメラ
JP5730030B2 (ja) * 2011-01-17 2015-06-03 浜松ホトニクス株式会社 固体撮像装置
JP5743837B2 (ja) * 2011-10-07 2015-07-01 キヤノン株式会社 光電変換装置、撮像装置および撮像システム
JP6172888B2 (ja) * 2012-01-18 2017-08-02 キヤノン株式会社 撮像装置および撮像システム
KR101615332B1 (ko) 2012-03-06 2016-04-26 삼성디스플레이 주식회사 유기 발광 표시 장치의 화소 배열 구조
US10832616B2 (en) 2012-03-06 2020-11-10 Samsung Display Co., Ltd. Pixel arrangement structure for organic light emitting diode display
TWI506777B (zh) * 2012-07-03 2015-11-01 Sony Corp A solid-state imaging device, a solid-state imaging device, and a camera device
JP6231741B2 (ja) 2012-12-10 2017-11-15 キヤノン株式会社 固体撮像装置およびその製造方法
EP3035669B1 (fr) 2014-12-16 2017-08-23 Canon Kabushiki Kaisha Procédé de commande d'appareil de prise d'image
JP6700740B2 (ja) * 2014-12-16 2020-05-27 キヤノン株式会社 撮像装置
JP6707644B2 (ja) * 2015-12-31 2020-06-10 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ インテリジェント分散型ビジョントラフィックマーカー及びその方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4658287A (en) * 1984-02-29 1987-04-14 Fairchild Camera And Instrument Corp. MOS imaging device with monochrome-color compatibility and signal readout versatility
US5070406A (en) * 1983-12-24 1991-12-03 Canon Kabushiki Kaisha Image sensing apparatus having a low-resolution monitor, means for reducing the amount of information in an image signal, and switching means for reducing power consumption in various operating modes
EP0571908A2 (fr) * 1992-05-29 1993-12-01 Eastman Kodak Company Dispositif et méthode de génération de signal vidéo entrelaçé utilisant un capteur d'image haute résolution à balayage progressif

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2504317B2 (de) * 1974-09-05 1977-09-29 The General Corp, Kawasaki, Kanagawa (Japan) Farbfernsehkamera
US4740828A (en) * 1983-12-24 1988-04-26 Canon Kabushiki Kaisha Image sensing apparatus having a low-resolution monitor, means for reducing the amount of information in an image signal, and switching means for reducing power consumption in various operating modes
JPH0695735B2 (ja) 1985-12-25 1994-11-24 キヤノン株式会社 固体撮像装置
US4805026A (en) * 1986-02-18 1989-02-14 Nec Corporation Method for driving a CCD area image sensor in a non-interlace scanning and a structure of the CCD area image sensor for driving in the same method
JP2585019B2 (ja) 1987-09-17 1997-02-26 松下電器産業株式会社 撮像装置
JP2635326B2 (ja) * 1987-05-14 1997-07-30 松下電器産業株式会社 カラーカメラ装置
US4903121A (en) 1987-05-14 1990-02-20 Matsushita Electric Industrial Co., Ltd. Image pick up apparatus having pixel compensation circuit
JP2511968B2 (ja) 1987-05-22 1996-07-03 松下電器産業株式会社 撮像装置
JPH0318878A (ja) * 1989-06-15 1991-01-28 Matsushita Electric Ind Co Ltd 現像器
JP3238929B2 (ja) 1990-03-27 2001-12-17 三洋電機株式会社 非晶質シリコンカーバイド膜の形成方法並びに光起電力装置
KR930000342B1 (ko) 1990-06-15 1993-01-16 김익태 환편기의 캠장치
JPH0468880A (ja) * 1990-07-06 1992-03-04 Fuji Photo Film Co Ltd 固体撮像装置
US5410349A (en) 1990-07-06 1995-04-25 Fuji Photo Film Co., Ltd. Solid-state image pick-up device of the charge-coupled device type synchronizing drive signals for a full-frame read-out
JPH04284087A (ja) * 1991-03-13 1992-10-08 Canon Inc 電子スチルカメラ
DE69320839T2 (de) * 1992-01-31 1999-03-04 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Verfahren zur Ladungsübertragung, Ladungsübertragungsvorrichtung und Festkörperbildaufnahmevorrichtung zur Anwendung derselben
JPH07123421A (ja) * 1993-10-27 1995-05-12 Canon Inc 撮像装置
JPH0823421A (ja) * 1994-07-08 1996-01-23 Pfu Ltd イメージスキャナ装置
US5956086A (en) * 1995-10-06 1999-09-21 Asahi Kogaku Kogyo Kabushiki Kaisha Image indicating device and imaging device
JP4068880B2 (ja) * 2002-04-19 2008-03-26 フクビ化学工業株式会社 生分解性軟質ポリウレタンフォームの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5070406A (en) * 1983-12-24 1991-12-03 Canon Kabushiki Kaisha Image sensing apparatus having a low-resolution monitor, means for reducing the amount of information in an image signal, and switching means for reducing power consumption in various operating modes
US4658287A (en) * 1984-02-29 1987-04-14 Fairchild Camera And Instrument Corp. MOS imaging device with monochrome-color compatibility and signal readout versatility
EP0571908A2 (fr) * 1992-05-29 1993-12-01 Eastman Kodak Company Dispositif et méthode de génération de signal vidéo entrelaçé utilisant un capteur d'image haute résolution à balayage progressif

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO9723999A1 *

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7728802B2 (en) 2000-07-28 2010-06-01 Samsung Electronics Co., Ltd. Arrangements of color pixels for full color imaging devices with simplified addressing
US7646398B2 (en) 2000-07-28 2010-01-12 Samsung Electronics Co., Ltd. Arrangement of color pixels for full color imaging devices with simplified addressing
US7969456B2 (en) 2001-05-09 2011-06-28 Samsung Electronics Co., Ltd. Methods and systems for sub-pixel rendering with adaptive filtering
US7889215B2 (en) 2001-05-09 2011-02-15 Samsung Electronics Co., Ltd. Conversion of a sub-pixel format data to another sub-pixel data format
US7689058B2 (en) 2001-05-09 2010-03-30 Samsung Electronics Co., Ltd. Conversion of a sub-pixel format data to another sub-pixel data format
US7688335B2 (en) 2001-05-09 2010-03-30 Samsung Electronics Co., Ltd. Conversion of a sub-pixel format data to another sub-pixel data format
US7755649B2 (en) 2001-05-09 2010-07-13 Samsung Electronics Co., Ltd. Methods and systems for sub-pixel rendering with gamma adjustment
US8421820B2 (en) 2001-05-09 2013-04-16 Samsung Display Co., Ltd. Methods and systems for sub-pixel rendering with adaptive filtering
US8830275B2 (en) 2001-05-09 2014-09-09 Samsung Display Co., Ltd. Methods and systems for sub-pixel rendering with gamma adjustment
US8159511B2 (en) 2001-05-09 2012-04-17 Samsung Electronics Co., Ltd. Methods and systems for sub-pixel rendering with gamma adjustment
US7911487B2 (en) 2001-05-09 2011-03-22 Samsung Electronics Co., Ltd. Methods and systems for sub-pixel rendering with gamma adjustment
US8223168B2 (en) 2001-05-09 2012-07-17 Samsung Electronics Co., Ltd. Conversion of a sub-pixel format data
US8022969B2 (en) 2001-05-09 2011-09-20 Samsung Electronics Co., Ltd. Rotatable display with sub-pixel rendering
US9355601B2 (en) 2001-05-09 2016-05-31 Samsung Display Co., Ltd. Methods and systems for sub-pixel rendering with adaptive filtering
US7916156B2 (en) 2001-05-09 2011-03-29 Samsung Electronics Co., Ltd. Conversion of a sub-pixel format data to another sub-pixel data format
US8405692B2 (en) 2001-12-14 2013-03-26 Samsung Display Co., Ltd. Color flat panel display arrangements and layouts with reduced blue luminance well visibility
US7755652B2 (en) 2002-01-07 2010-07-13 Samsung Electronics Co., Ltd. Color flat panel display sub-pixel rendering and driver configuration for sub-pixel arrangements with split sub-pixels
US8134583B2 (en) 2002-01-07 2012-03-13 Samsung Electronics Co., Ltd. To color flat panel display sub-pixel arrangements and layouts for sub-pixel rendering with split blue sub-pixels
US8456496B2 (en) 2002-01-07 2013-06-04 Samsung Display Co., Ltd. Color flat panel display sub-pixel arrangements and layouts for sub-pixel rendering with split blue sub-pixels
US7701476B2 (en) 2002-09-13 2010-04-20 Samsung Electronics Co., Ltd. Four color arrangements of emitters for subpixel rendering
US7864194B2 (en) 2003-03-04 2011-01-04 Samsung Electronics Co., Ltd. Systems and methods for motion adaptive filtering
US8378947B2 (en) 2003-03-04 2013-02-19 Samsung Display Co., Ltd. Systems and methods for temporal subpixel rendering of image data
US8704744B2 (en) 2003-03-04 2014-04-22 Samsung Display Co., Ltd. Systems and methods for temporal subpixel rendering of image data
US8144094B2 (en) 2003-06-06 2012-03-27 Samsung Electronics Co., Ltd. Liquid crystal display backplane layouts and addressing for non-standard subpixel arrangements
CN1870729B (zh) * 2005-05-26 2010-05-26 索尼株式会社 固态成像装置、其驱动方法、和成像设备

Also Published As

Publication number Publication date
JP3511772B2 (ja) 2004-03-29
WO1997023999A1 (fr) 1997-07-03
BR9607044A (pt) 1997-12-30
JPH09182091A (ja) 1997-07-11
EP0812114B1 (fr) 2003-03-26
CN1176037A (zh) 1998-03-11
RU2182405C2 (ru) 2002-05-10
DE69626970D1 (de) 2003-04-30
US6198507B1 (en) 2001-03-06
KR19980702357A (ko) 1998-07-15
CA2213250A1 (fr) 1997-07-03
EP0812114A4 (fr) 2001-05-09
DE69626970T2 (de) 2003-11-27
CN1104804C (zh) 2003-04-02

Similar Documents

Publication Publication Date Title
EP0812114B1 (fr) Detecteur d'image a semi-conducteurs, procede d'actionnement de celui-ci, dispositif pour camera a semi-conducteurs et camera a semi-conducteurs
US7944495B2 (en) Solid-state image pickup element including a thinning method to discharge unnecessary image data
US7995122B2 (en) Solid-state image capturing device, smear charge removing method and digital still camera using the same
US7002630B1 (en) Method of driving solid-state imaging device, solid-state imaging device and camera
EP0346102A2 (fr) Dispositif capteur d'image à l'état solide
US6496224B2 (en) Imaging device including thinned read out mode and all pixel read out mode
JPH04262679A (ja) 固体撮像素子の駆動方法
JP2007295230A (ja) 固体撮像装置およびその駆動方法、カメラ
US20050231623A1 (en) Imaging apparatus
US6118481A (en) Solid state image pick-up device and image pick-up apparatus
US8045025B2 (en) Image pickup device adaptable to display fewer vertical pixels
KR100585118B1 (ko) 다이내믹 레인지를 향상시킨 서브 샘플링 모드를 제공하는고체 촬상 소자 및 그 구동 방법
JP3948042B2 (ja) カメラシステム、撮像装置および撮像方法
JP3273080B2 (ja) 固体撮像装置
JP4069533B2 (ja) 固体撮像装置およびその駆動方法並びにカメラシステム
JPH08279608A (ja) 電荷転送素子及び電荷転送素子の駆動方法
JP4734760B2 (ja) 固体撮像素子の駆動装置及び駆動方法
JPH09312849A (ja) 固体撮像装置
JP2595916B2 (ja) 固体撮像素子及びその駆動方法
JP2753895B2 (ja) 固体撮像装置
JPH1084506A (ja) 固体撮像装置
JPH0560303B2 (fr)
JP2000152093A (ja) 固体撮像素子
JPH1169236A (ja) 固体撮像素子及び固体撮像素子の駆動方法

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19970724

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB

A4 Supplementary search report drawn up and despatched

Effective date: 20010328

AK Designated contracting states

Kind code of ref document: A4

Designated state(s): DE FR GB

RIC1 Information provided on ipc code assigned before grant

Free format text: 7H 04N 3/15 A, 7H 04N 9/04 B

17Q First examination report despatched

Effective date: 20010620

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Designated state(s): DE FR GB

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REF Corresponds to:

Ref document number: 69626970

Country of ref document: DE

Date of ref document: 20030430

Kind code of ref document: P

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20031210

Year of fee payment: 8

Ref country code: FR

Payment date: 20031210

Year of fee payment: 8

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20031218

Year of fee payment: 8

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20031230

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20041211

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050701

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20041211

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050831

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST