EA024976B1 - Барьерный слой для щелочных металлов на основе sioc - Google Patents
Барьерный слой для щелочных металлов на основе sioc Download PDFInfo
- Publication number
- EA024976B1 EA024976B1 EA201490968A EA201490968A EA024976B1 EA 024976 B1 EA024976 B1 EA 024976B1 EA 201490968 A EA201490968 A EA 201490968A EA 201490968 A EA201490968 A EA 201490968A EA 024976 B1 EA024976 B1 EA 024976B1
- Authority
- EA
- Eurasian Patent Office
- Prior art keywords
- layer
- stage
- silicon oxycarbide
- depth
- total thickness
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3441—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising carbon, a carbide or oxycarbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
- C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/156—Deposition methods from the vapour phase by sputtering by magnetron sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Abstract
Изобретение относится к остеклению, содержащему прозрачную стеклянную подложку, содержащую ионы по меньшей мере одного щелочного металла, и прозрачный слой оксикарбида кремния (SiOC) общей толщиной E с (a) глубокой зоной с высоким содержанием углерода, идущей от глубины Pдо глубины P, где атомное отношение С/Si больше или равно 0,5, и (b) поверхностной зоной с низким содержанием углерода, идущей от глубины Pдо глубины P, где атомное отношение С/Si меньше или равно 0,4, где P<P<P<P, и (P-P)+(P-P)<E, причем расстояние между Pи Pсоставляет от 10 до 70% общей толщины E слоя оксикарбида кремния, и расстояние между Pи Pсоставляет от 10 до 70% общей толщины E слоя оксикарбида кремния.
Description
(57) Изобретение относится к остеклению, содержащему прозрачную стеклянную подложку, содержащую ионы по меньшей мере одного щелочного металла, и прозрачный слой оксикарбида кремния (8ЮхСу) общей толщиной Е с (а) глубокой зоной с высоким содержанием углерода, идущей от глубины Р3 до глубины Р4, где атомное отношение С/δΐ больше или равно 0,5, и (Ъ) поверхностной зоной с низким содержанием углерода, идущей от глубины Ρΐ до глубины Р2, где атомное отношение С/δΐ меньше или равно 0,4, где Ρι<Ρ2<Ρ3<Ρ4, и (Р2-Р1)+(Р4-Рз)<Е, причем расстояние между Ρΐ и Р2 составляет от 10 до 70% общей толщины Е слоя оксикарбида кремния, и расстояние между Р3 и Р4 составляет от 10 до 70% общей толщины Е слоя оксикарбида кремния.
Claims (6)
1. Остекление, содержащее прозрачную стеклянную подложку, содержащую ионы по меньшей мере одного щелочного металла, и прозрачный слой оксикарбида кремния (8ЮхСу) общей толщиной Е, включающее:
(a) глубокую зону с высоким содержанием углерода, идущую от глубины Р3 до глубины Р4, где атомное отношение С/δΐ больше или равно 0,5, и (b) поверхностную зону с низким содержанием углерода, идущую от глубины Ρΐ до глубины Р2, где атомное отношение С/δΐ меньше или равно 0,4, где Р1<Р2<Р3<Р4 и ^2^1)+^4-¾^¾ причем расстояние между Р1 и Р2 составляет от 10 до 70% общей толщины Е слоя оксикарбида кремния и расстояние между Р3 и Р4 составляет от 10 до 70% общей толщины Е слоя оксикарбида кремния, причем между Р2 и Р3 имеется зона, где отношение С/δΐ находится между 0,4 и 0,5, а за Р4 находится зона, где отношение С/δΐ меньше 0,5.
2. Остекление по п.1, отличающееся тем, что общая толщина Е слоя δΐΟ;^ составляет от 10 до 200 нм, предпочтительно от 20 до 100 нм и, в частности, от 40 до 70 нм.
3. Остекление по п.1 или 2, отличающееся тем, что прозрачный слой оксикарбида кремния представляет собой непористый слой с показателем преломления от 1,45 до 1,9.
4. Остекление по любому из пп.1-3, отличающееся тем, что оно имеет величину Ь*, как используют в С1Е Б*А*Ь* колориметрической системы, от -2 до +3, в частности от -1,5 до +2,0.
5. Способ получения остекления по любому из пп.1-4, отличающийся тем, что включает:
(а) первую стадию химического осаждения из газовой фазы (СУЭ) слоя оксикарбида кремния с высоким содержанием углерода по меньшей мере на часть поверхности подложки из неорганического стекла путем приведения в контакт указанной поверхности с потоком газов, содержащим этилен (С2Н4), силан (δΐΗ4), диоксид углерода (СО2) и азот (N2) при температуре от 600 до 680°С, при этом объемное отношение этилен/силан ^Η/δΐ^) на стадии (а) меньше или равно 3,3, (Ь1) вторую стадию химического осаждения из газовой фазы (СУЭ) слоя оксикарбида кремния с низким содержанием углерода на слой с высоким содержанием углерода, полученный на стадии (а), с потоком газов, содержащим этилен (С2Н4), силан (δΐΗ4), диоксид углерода (СО2) и азот (N2) при температуре от 600 до 680°С, при этом объемное отношение этилен/силан ^2¾^¾) на стадии (Ь1) превышает 3,4, или (Ь2) вторую стадию осаждения слоя кремнезема (δΐθ2) химическим осаждением из газовой фазы (СУЭ), усиленным плазмой химическим осаждением из газовой фазы (РЕСУЭ) или катодным напылением методом магнетрона на слой с высоким содержанием углерода, полученный на стадии (а).
6. Способ по п.5, отличающийся тем, что дополнительно включает стадию обжига и/или формовки при температуре от 580 до 700°С, предпочтительно от 600 до 680°С.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1160418A FR2982608B1 (fr) | 2011-11-16 | 2011-11-16 | Couche barriere aux metaux alcalins a base de sioc |
| PCT/FR2012/052622 WO2013072623A1 (fr) | 2011-11-16 | 2012-11-14 | Couche barriere aux metaux alcalins a base de sioc |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EA201490968A1 EA201490968A1 (ru) | 2014-08-29 |
| EA024976B1 true EA024976B1 (ru) | 2016-11-30 |
Family
ID=47291136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EA201490968A EA024976B1 (ru) | 2011-11-16 | 2012-11-14 | Барьерный слой для щелочных металлов на основе sioc |
Country Status (18)
| Country | Link |
|---|---|
| US (1) | US9012024B2 (ru) |
| EP (1) | EP2780294B1 (ru) |
| JP (1) | JP6050370B2 (ru) |
| KR (1) | KR102000803B1 (ru) |
| CN (1) | CN103974918B (ru) |
| BR (1) | BR112014010220A8 (ru) |
| CA (1) | CA2854052C (ru) |
| DK (1) | DK2780294T3 (ru) |
| EA (1) | EA024976B1 (ru) |
| ES (1) | ES2736923T3 (ru) |
| FR (1) | FR2982608B1 (ru) |
| HU (1) | HUE045009T2 (ru) |
| IN (1) | IN2014MN00825A (ru) |
| MX (1) | MX336859B (ru) |
| PL (1) | PL2780294T3 (ru) |
| PT (1) | PT2780294T (ru) |
| TR (1) | TR201909120T4 (ru) |
| WO (1) | WO2013072623A1 (ru) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106277818A (zh) * | 2015-05-11 | 2017-01-04 | 杭州合新科技有限公司 | 一种新型阳光控制镀膜玻璃及其制备工艺 |
| PL3319915T3 (pl) * | 2015-07-07 | 2020-06-15 | Agc Glass Europe | Szklane podłoże o podwyższonej odporności na warunki atmosferyczne i środki chemiczne |
| US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
| US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| US9786492B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| CN105669044B (zh) * | 2015-12-31 | 2018-05-29 | 株洲醴陵旗滨玻璃有限公司 | 一种在线易洁镀膜玻璃及其制备方法 |
| KR102378021B1 (ko) * | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
| US10373820B2 (en) | 2016-06-01 | 2019-08-06 | Asm Ip Holding B.V. | Deposition of organic films |
| US10453701B2 (en) | 2016-06-01 | 2019-10-22 | Asm Ip Holding B.V. | Deposition of organic films |
| US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
| US10504901B2 (en) | 2017-04-26 | 2019-12-10 | Asm Ip Holding B.V. | Substrate processing method and device manufactured using the same |
| CN110546302B (zh) | 2017-05-05 | 2022-05-27 | Asm Ip 控股有限公司 | 用于受控形成含氧薄膜的等离子体增强沉积方法 |
| US10991573B2 (en) | 2017-12-04 | 2021-04-27 | Asm Ip Holding B.V. | Uniform deposition of SiOC on dielectric and metal surfaces |
| DE102018207101A1 (de) * | 2018-05-08 | 2019-11-14 | Robert Bosch Gmbh | Verfahren zum Herstellen eines Bodens einer Analysezelle zum Analysieren eines biochemischen Materials und Analysezelle |
| JP7332709B2 (ja) * | 2019-03-19 | 2023-08-23 | アプライド マテリアルズ インコーポレイテッド | 疎水性及び疎氷性コーティング |
| JP7020458B2 (ja) * | 2019-07-12 | 2022-02-16 | Ａｇｃ株式会社 | 膜付きガラス基板及びその製造方法 |
| JPWO2022114027A1 (ru) * | 2020-11-30 | 2022-06-02 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0518755A1 (fr) * | 1991-06-14 | 1992-12-16 | Saint-Gobain Vitrage International | Technique de formation par pyrolyse en voie gazeuse d'un revêtement essentiellement à base d'oxygène et de silicium |
| US20030162033A1 (en) * | 2002-02-22 | 2003-08-28 | Afg Industries, Inc. | Method of making self-cleaning substrates |
| WO2011101572A1 (fr) * | 2010-02-22 | 2011-08-25 | Saint-Gobain Glass France | Substrat verrier revetu de couches a tenue mecanique amelioree |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5958065A (ja) * | 1982-09-29 | 1984-04-03 | Toray Ind Inc | 防曇性被膜 |
| GB8630918D0 (en) | 1986-12-24 | 1987-02-04 | Pilkington Brothers Plc | Coatings on glass |
| US5723172A (en) * | 1994-03-11 | 1998-03-03 | Dan Sherman | Method for forming a protective coating on glass |
| FR2728559B1 (fr) * | 1994-12-23 | 1997-01-31 | Saint Gobain Vitrage | Substrats en verre revetus d'un empilement de couches minces a proprietes de reflexion dans l'infrarouge et/ou dans le domaine du rayonnement solaire |
| FR2736632B1 (fr) | 1995-07-12 | 1997-10-24 | Saint Gobain Vitrage | Vitrage muni d'une couche conductrice et/ou bas-emissive |
| FR2738813B1 (fr) * | 1995-09-15 | 1997-10-17 | Saint Gobain Vitrage | Substrat a revetement photo-catalytique |
| FR2759362B1 (fr) * | 1997-02-10 | 1999-03-12 | Saint Gobain Vitrage | Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention |
| US7096692B2 (en) * | 1997-03-14 | 2006-08-29 | Ppg Industries Ohio, Inc. | Visible-light-responsive photoactive coating, coated article, and method of making same |
| US6379803B1 (en) * | 1997-06-03 | 2002-04-30 | Nippon Sheet Glass Co., Ltd. | Low-reflectance glass article and process for preparing the same |
| GB2355273A (en) | 1999-10-12 | 2001-04-18 | Pilkington Plc | Coating glass |
| FR2800731B1 (fr) | 1999-11-05 | 2002-01-18 | Saint Gobain Vitrage | Substrat transparent muni d'une couche en derive de silicium |
| JP2003221257A (ja) * | 2002-01-31 | 2003-08-05 | Nippon Sheet Glass Co Ltd | 透明薄膜の成形方法およびそれを備える透明基体 |
| GB2403731A (en) * | 2003-07-11 | 2005-01-12 | Pilkington Plc | Solar control glazing |
| US7943246B2 (en) * | 2003-07-11 | 2011-05-17 | Pilkington Group Limited | Solar control glazing |
| EP1686595B1 (en) | 2003-11-18 | 2009-12-09 | Nippon Sheet Glass Company, Limited | Method for producing a transparent base with transparent conductive film, |
| FR2864844B1 (fr) | 2004-01-07 | 2015-01-16 | Saint Gobain | Dispositif d'eclairage autonettoyant |
| US7482060B2 (en) * | 2004-07-14 | 2009-01-27 | Agc Flat Glass North America, Inc. | Silicon oxycarbide coatings having durable hydrophilic properties |
| BRPI1009124A2 (pt) * | 2009-03-18 | 2017-11-07 | Agc Flat Glass Na Inc | revestimento de película delgada e metódo de fabricação do mesmo |
-
2011
- 2011-11-16 FR FR1160418A patent/FR2982608B1/fr not_active Expired - Fee Related
-
2012
- 2012-11-14 CN CN201280056372.5A patent/CN103974918B/zh not_active Expired - Fee Related
- 2012-11-14 EA EA201490968A patent/EA024976B1/ru not_active IP Right Cessation
- 2012-11-14 EP EP12795542.5A patent/EP2780294B1/fr active Active
- 2012-11-14 JP JP2014541737A patent/JP6050370B2/ja not_active Expired - Fee Related
- 2012-11-14 PL PL12795542T patent/PL2780294T3/pl unknown
- 2012-11-14 MX MX2014005735A patent/MX336859B/es active IP Right Grant
- 2012-11-14 PT PT12795542T patent/PT2780294T/pt unknown
- 2012-11-14 KR KR1020147012790A patent/KR102000803B1/ko active IP Right Grant
- 2012-11-14 ES ES12795542T patent/ES2736923T3/es active Active
- 2012-11-14 TR TR2019/09120T patent/TR201909120T4/tr unknown
- 2012-11-14 IN IN825MUN2014 patent/IN2014MN00825A/en unknown
- 2012-11-14 BR BR112014010220A patent/BR112014010220A8/pt active Search and Examination
- 2012-11-14 WO PCT/FR2012/052622 patent/WO2013072623A1/fr active Application Filing
- 2012-11-14 HU HUE12795542A patent/HUE045009T2/hu unknown
- 2012-11-14 CA CA2854052A patent/CA2854052C/fr not_active Expired - Fee Related
- 2012-11-14 DK DK12795542.5T patent/DK2780294T3/da active
- 2012-11-14 US US14/358,540 patent/US9012024B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0518755A1 (fr) * | 1991-06-14 | 1992-12-16 | Saint-Gobain Vitrage International | Technique de formation par pyrolyse en voie gazeuse d'un revêtement essentiellement à base d'oxygène et de silicium |
| US20030162033A1 (en) * | 2002-02-22 | 2003-08-28 | Afg Industries, Inc. | Method of making self-cleaning substrates |
| WO2011101572A1 (fr) * | 2010-02-22 | 2011-08-25 | Saint-Gobain Glass France | Substrat verrier revetu de couches a tenue mecanique amelioree |
Non-Patent Citations (1)
| Title |
|---|
| RYAN JOSEPH; PANTANO C.: "Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A., AVS /AIP, MELVILLE, NY., US, vol. 25, no. 1, 10.1116/, 3 January 2007 (2007-01-03), MELVILLE, NY., US, pages 153 - 159, XP012102547, ISSN: 0734-2101, DOI: 10.1116/1.2404688 * |
Also Published As
| Publication number | Publication date |
|---|---|
| BR112014010220A2 (pt) | 2017-06-13 |
| CA2854052C (fr) | 2020-01-07 |
| PL2780294T3 (pl) | 2019-09-30 |
| WO2013072623A1 (fr) | 2013-05-23 |
| MX2014005735A (es) | 2014-07-09 |
| HUE045009T2 (hu) | 2019-12-30 |
| IN2014MN00825A (ru) | 2015-04-17 |
| CA2854052A1 (fr) | 2013-05-23 |
| TR201909120T4 (tr) | 2019-07-22 |
| ES2736923T3 (es) | 2020-01-09 |
| KR102000803B1 (ko) | 2019-07-16 |
| BR112014010220A8 (pt) | 2017-06-20 |
| MX336859B (es) | 2016-02-04 |
| KR20140093235A (ko) | 2014-07-25 |
| FR2982608B1 (fr) | 2013-11-22 |
| EA201490968A1 (ru) | 2014-08-29 |
| US9012024B2 (en) | 2015-04-21 |
| US20140349107A1 (en) | 2014-11-27 |
| JP2015506890A (ja) | 2015-03-05 |
| CN103974918A (zh) | 2014-08-06 |
| EP2780294A1 (fr) | 2014-09-24 |
| DK2780294T3 (da) | 2019-07-08 |
| PT2780294T (pt) | 2019-07-10 |
| FR2982608A1 (fr) | 2013-05-17 |
| EP2780294B1 (fr) | 2019-03-27 |
| CN103974918B (zh) | 2016-12-14 |
| JP6050370B2 (ja) | 2016-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EA024976B1 (ru) | Барьерный слой для щелочных металлов на основе sioc | |
| MX2011007156A (es) | Sustrato hidrofobo comprendiendo una capa de cebador del tipo oxicarburo de silicio activado por plasma. | |
| MX2014005761A (es) | Encristalado hidrofobico. | |
| WO2008073926A3 (en) | Formation of epitaxial layers containing silicon | |
| GB201113244D0 (en) | A diamond optical element | |
| WO2012002995A3 (en) | Thin films and methods of making them using cyclohexasilane | |
| TW200629428A (en) | Method for producing gate stack sidewall spacers | |
| WO2009149167A3 (en) | Low temperature deposition of silicon-containing films | |
| GB201110117D0 (en) | method and device for manufacturing a barrie layer on a flexible substrate | |
| WO2006078719A3 (en) | Interface engineering to improve adhesion between low k stacks | |
| WO2014116304A3 (en) | Method and hardware for cleaning uv chambers | |
| WO2007027350A3 (en) | Method of removing surface deposits and passivating interior surfaces of the interior of a chemical vapour deposition (cvd) chamber | |
| JP2013513235A5 (ru) | ||
| WO2011084532A3 (en) | Dielectric film formation using inert gas excitation | |
| TWI266369B (en) | Etching method and etching device | |
| SG143125A1 (en) | Chromium-free etching solution for si-substrates and sige-substrates, method for revealing defects using the etching solution and process for treating si-substrates and sige-substrates using the etching solution | |
| WO2012071163A3 (en) | Composite removable hardmask | |
| EP2362003A3 (en) | Methods of depositing SiO2 films | |
| GB201207448D0 (en) | Method of depositing silicon dioxide films | |
| WO2004097063A3 (en) | Method for producing silicon oxide film and method for producing optical multilayer film | |
| EP3822396A3 (en) | Diamond substrate and method for manufacturing the same | |
| WO2012021026A3 (ko) | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 (1) | |
| ATE427367T1 (de) | Verfahren zur herstellung einer dunnen schicht von stabilisiertem fluorhaltigen silika, so beschichtetes substrat und so erhaltene ophthalmische linse | |
| TW202012419A (zh) | 矽化合物及使用其沉積膜的方法 | |
| JP2009094490A5 (ru) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): AM AZ BY KZ KG TJ TM |
|
| MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): RU |