ATE555505T1 - Verfahren zur herstellung eines halbleitersubstrats - Google Patents
Verfahren zur herstellung eines halbleitersubstratsInfo
- Publication number
- ATE555505T1 ATE555505T1 AT09715749T AT09715749T ATE555505T1 AT E555505 T1 ATE555505 T1 AT E555505T1 AT 09715749 T AT09715749 T AT 09715749T AT 09715749 T AT09715749 T AT 09715749T AT E555505 T1 ATE555505 T1 AT E555505T1
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor layer
- modified
- semiconductor substrate
- producing
- providing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08290176A EP2096683B1 (de) | 2008-02-26 | 2008-02-26 | Verfahren zur Herstellung eines Halbleitersubstrats |
| EP09290097 | 2009-02-11 | ||
| PCT/EP2009/001382 WO2009106330A1 (en) | 2008-02-26 | 2009-02-26 | Method for fabricating a semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE555505T1 true ATE555505T1 (de) | 2012-05-15 |
Family
ID=40707751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09715749T ATE555505T1 (de) | 2008-02-26 | 2009-02-26 | Verfahren zur herstellung eines halbleitersubstrats |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8575010B2 (de) |
| EP (1) | EP2255395B1 (de) |
| JP (1) | JP4810649B2 (de) |
| KR (1) | KR101595307B1 (de) |
| CN (2) | CN101904017A (de) |
| AT (1) | ATE555505T1 (de) |
| WO (1) | WO2009106330A1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2957190B1 (fr) * | 2010-03-02 | 2012-04-27 | Soitec Silicon On Insulator | Procede de realisation d'une structure multicouche avec detourage par effets thermomecaniques. |
| US8455292B2 (en) * | 2011-09-09 | 2013-06-04 | International Business Machines Corporation | Deposition of germanium film |
| US9481566B2 (en) | 2012-07-31 | 2016-11-01 | Soitec | Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices |
| FR2995447B1 (fr) | 2012-09-07 | 2014-09-05 | Soitec Silicon On Insulator | Procede de separation d'au moins deux substrats selon une interface choisie |
| KR20220141707A (ko) | 2021-04-13 | 2022-10-20 | 김지현 | 물류창고용 렉 가이드 장치 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5137837A (en) * | 1990-08-20 | 1992-08-11 | Hughes Aircraft Company | Radiation-hard, high-voltage semiconductive device structure fabricated on SOI substrate |
| US5336879A (en) | 1993-05-28 | 1994-08-09 | David Sarnoff Research Center, Inc. | Pixel array having image forming pixel elements integral with peripheral circuit elements |
| US6326280B1 (en) | 1995-02-02 | 2001-12-04 | Sony Corporation | Thin film semiconductor and method for making thin film semiconductor |
| FR2845523B1 (fr) | 2002-10-07 | 2005-10-28 | Procede pour realiser un substrat par transfert d'une plaquette donneuse comportant des especes etrangeres, et plaquette donneuse associee | |
| WO2004054001A2 (en) | 2002-12-09 | 2004-06-24 | Quantum Semiconductor Llc | Cmos image sensor |
| FR2855910B1 (fr) * | 2003-06-06 | 2005-07-15 | Commissariat Energie Atomique | Procede d'obtention d'une couche tres mince par amincissement par auto-portage provoque |
| US7180098B2 (en) | 2004-04-05 | 2007-02-20 | Legerity, Inc. | Optical isolator device, and method of making same |
| JP2006134915A (ja) * | 2004-11-02 | 2006-05-25 | Sony Corp | 半導体基板、固体撮像装置および固体撮像装置の製造方法 |
| US7238583B2 (en) | 2005-02-11 | 2007-07-03 | Sarnoff Corporation | Back-illuminated imaging device and method of fabricating same |
| US7723215B2 (en) * | 2005-02-11 | 2010-05-25 | Sarnoff Corporation | Dark current reduction in back-illuminated imaging sensors and method of fabricating same |
| JP4618064B2 (ja) * | 2005-09-12 | 2011-01-26 | ソニー株式会社 | 半導体装置およびその製造方法 |
| US7777229B2 (en) | 2006-09-11 | 2010-08-17 | Sarnoff Corporation | Method and apparatus for reducing smear in back-illuminated imaging sensors |
| US7541256B2 (en) | 2007-03-28 | 2009-06-02 | Sarnoff Corporation | Method of fabricating back-illuminated imaging sensors using a bump bonding technique |
| US7985612B2 (en) | 2008-02-19 | 2011-07-26 | Sri International | Method and device for reducing crosstalk in back illuminated imagers |
| EP2281307A4 (de) | 2008-05-28 | 2011-06-29 | Sarnoff Corp | Rückbeleuchtete abbildungsvorrichtung mit ultradünnem silicium auf isolatorsubstraten |
| US7982277B2 (en) | 2008-05-30 | 2011-07-19 | Sri International | High-efficiency thinned imager with reduced boron updiffusion |
| EP2281306A4 (de) | 2008-05-30 | 2013-05-22 | Sarnoff Corp | Verfahren zur elektronischen befestigung einer rückfläche eines auf einem utsoi-wafer hergestellten rückbeleuchteten abbilders |
-
2009
- 2009-02-26 WO PCT/EP2009/001382 patent/WO2009106330A1/en active Application Filing
- 2009-02-26 JP JP2010547127A patent/JP4810649B2/ja active Active
- 2009-02-26 CN CN2009801014367A patent/CN101904017A/zh active Pending
- 2009-02-26 US US12/918,935 patent/US8575010B2/en active Active
- 2009-02-26 EP EP09715749A patent/EP2255395B1/de active Active
- 2009-02-26 KR KR1020107015399A patent/KR101595307B1/ko active IP Right Grant
- 2009-02-26 AT AT09715749T patent/ATE555505T1/de active
- 2009-02-26 CN CN201210068928.4A patent/CN102623470B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8575010B2 (en) | 2013-11-05 |
| CN101904017A (zh) | 2010-12-01 |
| KR20100134551A (ko) | 2010-12-23 |
| US20110024868A1 (en) | 2011-02-03 |
| EP2255395A1 (de) | 2010-12-01 |
| JP4810649B2 (ja) | 2011-11-09 |
| EP2255395B1 (de) | 2012-04-25 |
| CN102623470A (zh) | 2012-08-01 |
| KR101595307B1 (ko) | 2016-02-26 |
| JP2011513947A (ja) | 2011-04-28 |
| WO2009106330A1 (en) | 2009-09-03 |
| CN102623470B (zh) | 2015-11-18 |
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