DK2112255T3 - Krystallinsk siliciummateriale og fremgangsmåde til fremstilling af samme - Google Patents
Krystallinsk siliciummateriale og fremgangsmåde til fremstilling af samme Download PDFInfo
- Publication number
- DK2112255T3 DK2112255T3 DK08710571.4T DK08710571T DK2112255T3 DK 2112255 T3 DK2112255 T3 DK 2112255T3 DK 08710571 T DK08710571 T DK 08710571T DK 2112255 T3 DK2112255 T3 DK 2112255T3
- Authority
- DK
- Denmark
- Prior art keywords
- silicon
- crystal
- single crystal
- crystal material
- straight body
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/285—Crystal holders, e.g. chucks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Claims (5)
1. Siiiciumkrystalmateriale (1), der fremstilles ved en CZ-fremgangsmade og anvendes ti! fremstilling af et siiiciumenkeitkrystal (30) ved en FZ-fremgangsmåde, Idet siiiciumkrystalmateriaiet (I) omfatter: en skuiderde! (5), der gradvist vokser i diameter; en lige kropsdel (2), som er cylinderforrnet; en halede! (6), som gradvist reduceres ! diameter; og en grebsdel (3), som gribes af en griber (22) under fremstilling af siliciumenkeitkrystallet (30) ved FZ-fremgangsmåden og som muliggør siægning af siiiciumkrystalmateriaiet (1) i en ovn og vækst af et enkeltkrystal, hvor grebsdeien (3), ligesom skulderdelen (5), den lige kropsdei (2), og haiedeien (6), er dannet i en fremstillingsproces af siliciumkrystal· materialet (1) fra CZ-fremgangsmåden; kendetegnet ved, at grebsdeien er en konveks del (3) dannet langs en periferi af den lige kropsdel (2) på haledelssiden.
2. Fremgangsmåde til fremstilling af et siiiciumkrystalmateriale (1), der anvendes til fremstilling af et siiiciumenkeitkrystal (30) ved en FZ~fremgangsmåde, idet siiiciumkrystalmateriaiet (I) omfatter: en skuiderde! (5), der gradvist vokser i diameter; en lige kropsdel (2), som er cylinderformet; en halede! (6), som gradvis reduceres i diameter; og en grebsdei (3), som gribes af en griber (22) under fremstilling af siiiciumenkeltkrystaiiet (30) ved FZ-fremgangsmåden og som muliggør iiægning af siiiciumkrystalmateriaiet (1) i en ovn og vækst af et enkeltkrystal, hvor skulderdelen (5), den lige kropsdel (2), haledelen (6), og grebsdelen (3) dannes ved en CZ-fremgangsmåde; kendetegnet ved, at grebsdelen er en konveks del (3) dannet langs en periferi af den lige kropsdei (2) på haiedelsslden,
3» Fremgangsmåde til fremstilling af siildumkrystalmaterialet (1) ifølge krav 2, hvor grebsdelen (3) dannes ved at ændre en krystalvækstbetingelse på et forudbestemt tidspunkt i en fremstillingsprocessen af siiiciumkrystaimateriaiet med CZ-fremgangsmåden.
4. Fremgangsmåde til fremstilling af siliciumkrystalmaterialet Ifølge krav 3. hvor krystalvækstbetingelsen ændres ved at ændre mindst en hvilket som helst af enkeltkrystalvæksthastigheden og temperaturen i råmateriale siiicium-srneltemassem
5, Fremgangsmåde til fremstilling af et FZ-siiiciumenkeitkrystal (30), hvor siiiciumenkeltkrystaiiet (30) fremstilles af FZ-fremgangsmåden under anvendelse af siildumkrystalmaterialet (I) Ifølge krav i.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007021044A JP5296992B2 (ja) | 2007-01-31 | 2007-01-31 | シリコン結晶素材及びその製造方法 |
PCT/JP2008/050882 WO2008093576A1 (ja) | 2007-01-31 | 2008-01-23 | シリコン結晶素材及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DK2112255T3 true DK2112255T3 (da) | 2017-01-23 |
Family
ID=39673888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK08710571.4T DK2112255T3 (da) | 2007-01-31 | 2008-01-23 | Krystallinsk siliciummateriale og fremgangsmåde til fremstilling af samme |
Country Status (5)
Country | Link |
---|---|
US (1) | US9181631B2 (da) |
EP (1) | EP2112255B1 (da) |
JP (1) | JP5296992B2 (da) |
DK (1) | DK2112255T3 (da) |
WO (1) | WO2008093576A1 (da) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5049544B2 (ja) * | 2006-09-29 | 2012-10-17 | Sumco Techxiv株式会社 | シリコン単結晶の製造方法、シリコン単結晶の製造制御装置、及びプログラム |
JP5302556B2 (ja) | 2008-03-11 | 2013-10-02 | Sumco Techxiv株式会社 | シリコン単結晶引上装置及びシリコン単結晶の製造方法 |
WO2010021272A1 (ja) * | 2008-08-18 | 2010-02-25 | Sumco Techxiv株式会社 | シリコンインゴット、シリコンウェーハ及びエピタキシャルウェーハの製造方法、並びにシリコンインゴット |
JP5201730B2 (ja) * | 2008-12-02 | 2013-06-05 | Sumco Techxiv株式会社 | Fz法シリコン単結晶の製造方法 |
JP6135666B2 (ja) * | 2012-05-31 | 2017-05-31 | 富士電機株式会社 | 半導体装置の製造方法 |
JP5846071B2 (ja) * | 2012-08-01 | 2016-01-20 | 信越半導体株式会社 | Fz法による半導体単結晶棒の製造方法 |
CN103147118B (zh) * | 2013-02-25 | 2016-03-30 | 天津市环欧半导体材料技术有限公司 | 一种利用直拉区熔法制备太阳能级硅单晶的方法 |
JP5679362B2 (ja) * | 2013-04-08 | 2015-03-04 | Sumco Techxiv株式会社 | シリコン結晶素材及びその製造方法 |
JP5679361B2 (ja) * | 2013-04-08 | 2015-03-04 | Sumco Techxiv株式会社 | シリコン結晶素材及びその製造方法 |
DE102014217605A1 (de) | 2014-09-03 | 2016-03-03 | Siltronic Ag | Verfahren zum Abstützen eines wachsenden Einkristalls während des Kristallisierens des Einkristalls gemäß dem FZ-Verfahren |
JP5892527B1 (ja) * | 2015-01-06 | 2016-03-23 | 信越化学工業株式会社 | 太陽電池用fzシリコン単結晶の製造方法及び太陽電池の製造方法 |
CN106702473B (zh) * | 2015-07-20 | 2019-05-21 | 有研半导体材料有限公司 | 一种区熔硅单晶生长中预防多晶出刺的工艺 |
CN106222745B (zh) * | 2016-09-29 | 2019-04-19 | 宜昌南玻硅材料有限公司 | 一种检测用区熔硅单晶棒及其拉制方法 |
KR102104072B1 (ko) * | 2018-01-19 | 2020-04-23 | 에스케이실트론 주식회사 | 실리콘 단결정 성장 방법 및 장치 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62288191A (ja) * | 1986-06-06 | 1987-12-15 | Kyushu Denshi Kinzoku Kk | 単結晶成長方法及びその装置 |
JPS63252991A (ja) * | 1987-04-09 | 1988-10-20 | Mitsubishi Metal Corp | 落下防止保持部を有するcz単結晶 |
TW541365B (en) | 1996-08-30 | 2003-07-11 | Sumitomo Sitix Corp | Single crystal pulling method and single crystal pulling device |
JP3050135B2 (ja) * | 1996-08-30 | 2000-06-12 | 住友金属工業株式会社 | 単結晶引き上げ方法及び単結晶引き上げ装置 |
KR19980079891A (ko) * | 1997-03-27 | 1998-11-25 | 모리 레이자로 | 단결정 성장장치 및 단결정 성장방법 |
JP3387364B2 (ja) * | 1997-05-21 | 2003-03-17 | 信越半導体株式会社 | シリコン種結晶およびその製造方法、並びにこれらの種結晶を用いてシリコン単結晶を製造する方法 |
EP0879903B1 (en) * | 1997-05-21 | 2001-12-12 | Shin-Etsu Handotai Company Limited | Silicon seed crystal, method of manufacturing the same, and method of manufacturing a silicon monocrystal through use of the seed crystal |
JPH11199372A (ja) * | 1998-01-05 | 1999-07-27 | Komatsu Ltd | 単結晶の引き上げ装置および落下防止装置およびこれらの方法 |
DE10137856B4 (de) | 2001-08-02 | 2007-12-13 | Siltronic Ag | Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium |
DE602004001510T2 (de) | 2003-02-11 | 2007-07-26 | Topsil Semiconductor Materials A/S | Vorrichtung und verfahren zur herstellung eines einkristallstabs |
JP4982034B2 (ja) * | 2004-03-30 | 2012-07-25 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
JP4367213B2 (ja) | 2004-04-21 | 2009-11-18 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
JP4904707B2 (ja) | 2005-03-22 | 2012-03-28 | 富士ゼロックス株式会社 | 現像装置 |
JP2007021044A (ja) | 2005-07-20 | 2007-02-01 | Topcon Corp | 可変形状ミラーの変形方法、光学装置及び眼底観察装置 |
JP5049544B2 (ja) | 2006-09-29 | 2012-10-17 | Sumco Techxiv株式会社 | シリコン単結晶の製造方法、シリコン単結晶の製造制御装置、及びプログラム |
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2007
- 2007-01-31 JP JP2007021044A patent/JP5296992B2/ja active Active
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2008
- 2008-01-23 WO PCT/JP2008/050882 patent/WO2008093576A1/ja active Application Filing
- 2008-01-23 US US12/524,737 patent/US9181631B2/en active Active
- 2008-01-23 DK DK08710571.4T patent/DK2112255T3/da active
- 2008-01-23 EP EP08710571.4A patent/EP2112255B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2008093576A1 (ja) | 2008-08-07 |
EP2112255B1 (en) | 2016-11-30 |
JP5296992B2 (ja) | 2013-09-25 |
US20100116194A1 (en) | 2010-05-13 |
EP2112255A1 (en) | 2009-10-28 |
US9181631B2 (en) | 2015-11-10 |
EP2112255A4 (en) | 2010-12-22 |
JP2008184374A (ja) | 2008-08-14 |
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