WO2008093576A1 - シリコン結晶素材及びその製造方法 - Google Patents

シリコン結晶素材及びその製造方法 Download PDF

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Publication number
WO2008093576A1
WO2008093576A1 PCT/JP2008/050882 JP2008050882W WO2008093576A1 WO 2008093576 A1 WO2008093576 A1 WO 2008093576A1 JP 2008050882 W JP2008050882 W JP 2008050882W WO 2008093576 A1 WO2008093576 A1 WO 2008093576A1
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WO
WIPO (PCT)
Prior art keywords
silicon
manufacturing
crystal
employing
section
Prior art date
Application number
PCT/JP2008/050882
Other languages
English (en)
French (fr)
Inventor
Shinji Togawa
Ryosuke Ueda
Original Assignee
Sumco Techxiv Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corporation filed Critical Sumco Techxiv Corporation
Priority to DK08710571.4T priority Critical patent/DK2112255T3/en
Priority to EP08710571.4A priority patent/EP2112255B1/en
Priority to US12/524,737 priority patent/US9181631B2/en
Publication of WO2008093576A1 publication Critical patent/WO2008093576A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/285—Crystal holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal

Abstract

　ＣＺ法により製造されたシリコン結晶素材であって、ＦＺ法によるシリコン単結晶の製造の原料棒として用いられ、機械加工を必要とせずにＦＺ法の結晶成長炉内に装填することができる被把持部を有するシリコン結晶素材及びその製造方法を提供すること。 　ＣＺ法によるシリコン結晶の製造方法により製造され、肩部、直胴部、及び尾部と同様に、ＣＺ法によるシリコン結晶製造過程で形成された、前記ＦＺ法による単結晶製造装置に装着されて単結晶成長を可能とするための被把持部を有する。また、ＣＺ法によるシリコン結晶製造で用いられた種結晶を被把持部として有する。その製造方法は、ＣＺ法によるシリコン結晶の製造方法で製造する際に、結晶の成長条件を一時的に変更して、直胴部の外周面に凸部又は凹部を、又は直胴部の肩部にくぼみ部を形成することを特徴とする。
PCT/JP2008/050882 2007-01-31 2008-01-23 シリコン結晶素材及びその製造方法 WO2008093576A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DK08710571.4T DK2112255T3 (en) 2007-01-31 2008-01-23 Crystalline silicon material and process for making the same
EP08710571.4A EP2112255B1 (en) 2007-01-31 2008-01-23 Silicon crystalline material and method for manufacturing the same
US12/524,737 US9181631B2 (en) 2007-01-31 2008-01-23 Silicon crystalline material and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007021044A JP5296992B2 (ja) 2007-01-31 2007-01-31 シリコン結晶素材及びその製造方法
JP2007-021044 2007-01-31

Publications (1)

Publication Number Publication Date
WO2008093576A1 true WO2008093576A1 (ja) 2008-08-07

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Family Applications (1)

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PCT/JP2008/050882 WO2008093576A1 (ja) 2007-01-31 2008-01-23 シリコン結晶素材及びその製造方法

Country Status (5)

Country Link
US (1) US9181631B2 (ja)
EP (1) EP2112255B1 (ja)
JP (1) JP5296992B2 (ja)
DK (1) DK2112255T3 (ja)
WO (1) WO2008093576A1 (ja)

Cited By (1)

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JP2010132470A (ja) * 2008-12-02 2010-06-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Ｆｚ法シリコン単結晶の製造方法

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JP5049544B2 (ja) * 2006-09-29 2012-10-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法、シリコン単結晶の製造制御装置、及びプログラム
JP5302556B2 (ja) 2008-03-11 2013-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置及びシリコン単結晶の製造方法
JP5420548B2 (ja) * 2008-08-18 2014-02-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンインゴット、シリコンウェーハ及びエピタキシャルウェーハの製造方法、並びにシリコンインゴット
WO2013180244A1 (ja) * 2012-05-31 2013-12-05 富士電機株式会社 半導体装置の製造方法
JP5846071B2 (ja) * 2012-08-01 2016-01-20 信越半導体株式会社 Ｆｚ法による半導体単結晶棒の製造方法
CN103147118B (zh) * 2013-02-25 2016-03-30 天津市环欧半导体材料技术有限公司 一种利用直拉区熔法制备太阳能级硅单晶的方法
JP5679362B2 (ja) * 2013-04-08 2015-03-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
JP5679361B2 (ja) * 2013-04-08 2015-03-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
DE102014217605A1 (de) 2014-09-03 2016-03-03 Siltronic Ag Verfahren zum Abstützen eines wachsenden Einkristalls während des Kristallisierens des Einkristalls gemäß dem FZ-Verfahren
JP5892527B1 (ja) * 2015-01-06 2016-03-23 信越化学工業株式会社 太陽電池用ｆｚシリコン単結晶の製造方法及び太陽電池の製造方法
CN106702473B (zh) * 2015-07-20 2019-05-21 有研半导体材料有限公司 一种区熔硅单晶生长中预防多晶出刺的工艺
CN106222745B (zh) * 2016-09-29 2019-04-19 宜昌南玻硅材料有限公司 一种检测用区熔硅单晶棒及其拉制方法
KR102104072B1 (ko) * 2018-01-19 2020-04-23 에스케이실트론 주식회사 실리콘 단결정 성장 방법 및 장치

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JPH1072279A (ja) * 1996-08-30 1998-03-17 Sumitomo Sitix Corp 単結晶引き上げ方法及び単結晶引き上げ装置
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JPH11199372A (ja) * 1998-01-05 1999-07-27 Komatsu Ltd 単結晶の引き上げ装置および落下防止装置およびこれらの方法
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
JP2010132470A (ja) * 2008-12-02 2010-06-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Ｆｚ法シリコン単結晶の製造方法

Also Published As

Publication number Publication date
EP2112255B1 (en) 2016-11-30
US20100116194A1 (en) 2010-05-13
EP2112255A4 (en) 2010-12-22
JP2008184374A (ja) 2008-08-14
DK2112255T3 (en) 2017-01-23
US9181631B2 (en) 2015-11-10
JP5296992B2 (ja) 2013-09-25
EP2112255A1 (en) 2009-10-28

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