DK0713542T3 - Krystallinsk flerlagsstruktur og fremgangsmåde til fremstilling deraf - Google Patents

Krystallinsk flerlagsstruktur og fremgangsmåde til fremstilling deraf

Info

Publication number
DK0713542T3
DK0713542T3 DK94913850T DK94913850T DK0713542T3 DK 0713542 T3 DK0713542 T3 DK 0713542T3 DK 94913850 T DK94913850 T DK 94913850T DK 94913850 T DK94913850 T DK 94913850T DK 0713542 T3 DK0713542 T3 DK 0713542T3
Authority
DK
Denmark
Prior art keywords
group iii
layer
pct
iii metal
temperature
Prior art date
Application number
DK94913850T
Other languages
English (en)
Inventor
Sylwester Porowski
Jan Jun
Izabella Grzegory
Stanislaw Krukowski
Miroslaw Wroblewski
Original Assignee
Ct Badan Wysokocisnieniowych
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ct Badan Wysokocisnieniowych filed Critical Ct Badan Wysokocisnieniowych
Application granted granted Critical
Publication of DK0713542T3 publication Critical patent/DK0713542T3/da

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
DK94913850T 1993-08-10 1994-04-27 Krystallinsk flerlagsstruktur og fremgangsmåde til fremstilling deraf DK0713542T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PL93300019A PL173917B1 (pl) 1993-08-10 1993-08-10 Sposób wytwarzania krystalicznej struktury wielowarstwowej
PCT/PL1994/000008 WO1995004845A1 (en) 1993-08-10 1994-04-27 Crystalline multilayer structure and manufacturing method thereof

Publications (1)

Publication Number Publication Date
DK0713542T3 true DK0713542T3 (da) 2000-10-30

Family

ID=20060668

Family Applications (1)

Application Number Title Priority Date Filing Date
DK94913850T DK0713542T3 (da) 1993-08-10 1994-04-27 Krystallinsk flerlagsstruktur og fremgangsmåde til fremstilling deraf

Country Status (11)

Country Link
US (1) US5637531A (da)
EP (1) EP0713542B1 (da)
JP (1) JP3373853B2 (da)
AT (1) ATE194859T1 (da)
AU (1) AU6584894A (da)
CA (1) CA2168871C (da)
DE (1) DE69425328T2 (da)
DK (1) DK0713542T3 (da)
ES (1) ES2148326T3 (da)
PL (1) PL173917B1 (da)
WO (1) WO1995004845A1 (da)

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Also Published As

Publication number Publication date
ATE194859T1 (de) 2000-08-15
JP3373853B2 (ja) 2003-02-04
EP0713542A1 (en) 1996-05-29
DE69425328D1 (de) 2000-08-24
CA2168871C (en) 2004-05-25
JPH09512385A (ja) 1997-12-09
US5637531A (en) 1997-06-10
AU6584894A (en) 1995-02-28
WO1995004845A1 (en) 1995-02-16
DE69425328T2 (de) 2000-12-14
PL173917B1 (pl) 1998-05-29
PL300019A1 (en) 1995-02-20
ES2148326T3 (es) 2000-10-16
EP0713542B1 (en) 2000-07-19
CA2168871A1 (en) 1995-02-16

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