ES2148326T3 - Estructura multicapa cristalina y su procedimiento de fabricacion. - Google Patents
Estructura multicapa cristalina y su procedimiento de fabricacion.Info
- Publication number
- ES2148326T3 ES2148326T3 ES94913850T ES94913850T ES2148326T3 ES 2148326 T3 ES2148326 T3 ES 2148326T3 ES 94913850 T ES94913850 T ES 94913850T ES 94913850 T ES94913850 T ES 94913850T ES 2148326 T3 ES2148326 T3 ES 2148326T3
- Authority
- ES
- Spain
- Prior art keywords
- group iii
- layer
- pct
- iii metal
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Abstract
SE PROPORCIONA UN PROCESO PARA LA FABRICACION DE UNA ESTRUCTURA CRISTALINA DE MULTIPLES CAPAS DE NITRUROS DE METALES DEL GRUPO III DE LA TABLA PERIODICA QUE INCLUYE GAN, AIN E INN. EL PROCESO INCLUYE LOS PASOS DE CALENTAR UN METAL DEL GRUPO III (26) A UNA TEMPERATURA T1 BAJO UNA PRESION DE NITROGENO EN EQUILIBRIO MIENTRAS SE MANTIENE LA ESTABILIDAD DEL NITRURO DE METAL DEL GRUPO III PARA FORMAR UNA PRIMERA CAPA DE CRISTAL DE NITRURO DE METAL DEL GRUPO III. POSTERIORMENTE, EL METODO INCLUYE EL PASO DE FORMAR UNA SEGUNDA CAPA DE CRISTAL (28) DEL NITRURO DE METAL DEL GRUPO III MEDIANTE LA REDUCCION DE LA PRESION DE NITROGENO DE MODO QUE LA SEGUNDA CAPA DE CRISTAL CREZCA EN LA PRIMERA CAPA CON UNA VELOCIDAD DE CRECIMIENTO INFERIOR AL CRECIMIENTO DE LA PRIMERA CAPA A UNA TEMPERATURA T2 NO SUPERIOR A LA TEMPERATURA T1. LA SEGUNDA CAPA (28) CRECE EN AL MENOS UNA PORCION DE LA PRIMERA CAPA CON UN GROSOR PREDETERMINADO BAJO LA NUEVA PRESION DE NITROGENO.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL93300019A PL173917B1 (pl) | 1993-08-10 | 1993-08-10 | Sposób wytwarzania krystalicznej struktury wielowarstwowej |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2148326T3 true ES2148326T3 (es) | 2000-10-16 |
Family
ID=20060668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES94913850T Expired - Lifetime ES2148326T3 (es) | 1993-08-10 | 1994-04-27 | Estructura multicapa cristalina y su procedimiento de fabricacion. |
Country Status (11)
Country | Link |
---|---|
US (1) | US5637531A (es) |
EP (1) | EP0713542B1 (es) |
JP (1) | JP3373853B2 (es) |
AT (1) | ATE194859T1 (es) |
AU (1) | AU6584894A (es) |
CA (1) | CA2168871C (es) |
DE (1) | DE69425328T2 (es) |
DK (1) | DK0713542T3 (es) |
ES (1) | ES2148326T3 (es) |
PL (1) | PL173917B1 (es) |
WO (1) | WO1995004845A1 (es) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU7346396A (en) * | 1995-10-13 | 1997-04-30 | Centrum Badan Wysokocisnieniowych | Method of manufacturing epitaxial layers of gan or ga(a1,in)n on single crystal gan and mixed ga(a1,in)n substrates |
JP2872096B2 (ja) * | 1996-01-19 | 1999-03-17 | 日本電気株式会社 | 低抵抗p型窒化ガリウム系化合物半導体の気相成長方法 |
JP4862855B2 (ja) * | 1996-06-25 | 2012-01-25 | 住友電気工業株式会社 | 半導体素子 |
JP3721674B2 (ja) * | 1996-12-05 | 2005-11-30 | ソニー株式会社 | 窒化物系iii−v族化合物半導体基板の製造方法 |
DE19652548C1 (de) * | 1996-12-17 | 1998-03-12 | Siemens Ag | Verfahren zur Herstellung stickstoffhaltiger III-V-Halbleiterschichten |
GB2323209A (en) * | 1997-03-13 | 1998-09-16 | Sharp Kk | Molecular beam epitaxy apparatus and method |
PL186905B1 (pl) * | 1997-06-05 | 2004-03-31 | Cantrum Badan Wysokocisnieniow | Sposób wytwarzania wysokooporowych kryształów objętościowych GaN |
PL183687B1 (pl) | 1997-06-06 | 2002-06-28 | Centrum Badan | Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n |
US6270569B1 (en) * | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
EP0979883A4 (en) * | 1997-12-25 | 2003-10-15 | Japan Energy Corp | METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS OF COMPOSITE SEMICONDUCTORS AND SINGLE CRYSTALS OF COMPOSITE SEMICONDUCTORS |
JPH11209199A (ja) * | 1998-01-26 | 1999-08-03 | Sumitomo Electric Ind Ltd | GaN単結晶の合成方法 |
JP5348123B2 (ja) * | 1999-06-09 | 2013-11-20 | 株式会社リコー | 結晶製造装置 |
CA2313155C (en) * | 1999-06-30 | 2003-09-30 | Sumitomo Electric Industries, Ltd. | Group iii-v nitride semiconductor growth method and vapor phase growth apparatus |
US6398867B1 (en) | 1999-10-06 | 2002-06-04 | General Electric Company | Crystalline gallium nitride and method for forming crystalline gallium nitride |
JP3438674B2 (ja) * | 1999-10-21 | 2003-08-18 | 松下電器産業株式会社 | 窒化物半導体素子の製造方法 |
GB2362263A (en) * | 2000-05-12 | 2001-11-14 | Juses Chao | Amorphous and polycrystalline growth of gallium nitride-based semiconductors |
US7615780B2 (en) * | 2000-10-23 | 2009-11-10 | General Electric Company | DNA biosensor and methods for making and using the same |
US7102158B2 (en) * | 2000-10-23 | 2006-09-05 | General Electric Company | Light-based system for detecting analytes |
WO2002044444A1 (en) | 2000-11-30 | 2002-06-06 | Kyma Technologies, Inc. | Method and apparatus for producing miiin columns and miiin materials grown thereon |
US6787010B2 (en) | 2000-11-30 | 2004-09-07 | North Carolina State University | Non-thermionic sputter material transport device, methods of use, and materials produced thereby |
US6806508B2 (en) | 2001-04-20 | 2004-10-19 | General Electic Company | Homoepitaxial gallium nitride based photodetector and method of producing |
US7001457B2 (en) | 2001-05-01 | 2006-02-21 | Ricoh Company, Ltd. | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
CN100453710C (zh) * | 2001-06-06 | 2009-01-21 | 波兰商艾蒙诺公司 | 获得整体单晶性含镓氮化物的方法及装置 |
US6902619B2 (en) * | 2001-06-28 | 2005-06-07 | Ntu Ventures Pte. Ltd. | Liquid phase epitaxy |
JP2003059835A (ja) * | 2001-08-13 | 2003-02-28 | Sony Corp | 窒化物半導体の成長方法 |
JP3910047B2 (ja) * | 2001-11-20 | 2007-04-25 | 松下電器産業株式会社 | 半導体記憶装置 |
US6949140B2 (en) | 2001-12-05 | 2005-09-27 | Ricoh Company, Ltd. | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
US20060138431A1 (en) | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
US7220311B2 (en) * | 2002-11-08 | 2007-05-22 | Ricoh Company, Ltd. | Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride |
ATE457372T1 (de) * | 2002-12-11 | 2010-02-15 | Ammono Sp Zoo | Substrat für epitaxie und verfahren zu seiner herstellung |
US20070040181A1 (en) * | 2002-12-27 | 2007-02-22 | General Electric Company | Crystalline composition, wafer, and semi-conductor structure |
US7638815B2 (en) * | 2002-12-27 | 2009-12-29 | Momentive Performance Materials Inc. | Crystalline composition, wafer, and semi-conductor structure |
US20060169996A1 (en) * | 2002-12-27 | 2006-08-03 | General Electric Company | Crystalline composition, wafer, and semi-conductor structure |
US7859008B2 (en) * | 2002-12-27 | 2010-12-28 | Momentive Performance Materials Inc. | Crystalline composition, wafer, device, and associated method |
US7098487B2 (en) | 2002-12-27 | 2006-08-29 | General Electric Company | Gallium nitride crystal and method of making same |
US7786503B2 (en) * | 2002-12-27 | 2010-08-31 | Momentive Performance Materials Inc. | Gallium nitride crystals and wafers and method of making |
US8357945B2 (en) * | 2002-12-27 | 2013-01-22 | Momentive Performance Materials Inc. | Gallium nitride crystal and method of making same |
US9279193B2 (en) | 2002-12-27 | 2016-03-08 | Momentive Performance Materials Inc. | Method of making a gallium nitride crystalline composition having a low dislocation density |
US8089097B2 (en) * | 2002-12-27 | 2012-01-03 | Momentive Performance Materials Inc. | Homoepitaxial gallium-nitride-based electronic devices and method for producing same |
AU2003299899A1 (en) | 2002-12-27 | 2004-07-29 | General Electric Company | Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
US7361220B2 (en) | 2003-03-26 | 2008-04-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method |
US7288152B2 (en) * | 2003-08-29 | 2007-10-30 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same |
US7009215B2 (en) * | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
US7323256B2 (en) * | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
US7118813B2 (en) * | 2003-11-14 | 2006-10-10 | Cree, Inc. | Vicinal gallium nitride substrate for high quality homoepitaxy |
CN100466178C (zh) * | 2003-12-26 | 2009-03-04 | 松下电器产业株式会社 | Iii族氮化物晶体的制造方法以及由此得到的iii族氮化物晶体与应用该晶体的iii族氮化物晶体基板 |
EP1741807B1 (en) * | 2004-04-27 | 2013-09-25 | Panasonic Corporation | Apparatus for production of crystal of group iii element nitride and process for producing crystal of group iii element nitride |
EP1769105B1 (en) * | 2004-06-11 | 2014-05-14 | Ammono S.A. | Bulk mono-crystalline gallium nitride and method for its preparation |
WO2005122691A2 (en) * | 2004-06-16 | 2005-12-29 | Mosaic Crystals Ltd. | Crystal growth method and apparatus |
DE102004048453A1 (de) * | 2004-10-05 | 2006-04-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Erhöhung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze |
DE102004048454B4 (de) | 2004-10-05 | 2008-02-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen |
PL371405A1 (pl) * | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku |
DE102005021099A1 (de) * | 2005-05-06 | 2006-12-07 | Universität Ulm | GaN-Schichten |
JP5638198B2 (ja) * | 2005-07-11 | 2014-12-10 | クリー インコーポレイテッドCree Inc. | ミスカット基板上のレーザダイオード配向 |
JP2007059850A (ja) * | 2005-08-26 | 2007-03-08 | Ngk Insulators Ltd | Iii族窒化物成膜用基板及びその製造方法並びにそれを用いた半導体装置 |
US8425858B2 (en) * | 2005-10-14 | 2013-04-23 | Morpho Detection, Inc. | Detection apparatus and associated method |
US20070086916A1 (en) * | 2005-10-14 | 2007-04-19 | General Electric Company | Faceted structure, article, sensor device, and method |
KR20070095603A (ko) * | 2006-03-22 | 2007-10-01 | 삼성코닝 주식회사 | 질화물계 반도체 기판의 아연 이온주입방법 |
JP2008071947A (ja) * | 2006-09-14 | 2008-03-27 | Rohm Co Ltd | 半導体素子の製造方法 |
JP4760652B2 (ja) * | 2006-10-03 | 2011-08-31 | 三菱化学株式会社 | Ga含有窒化物結晶の製造方法およびそれを用いた半導体デバイスの製造方法 |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
WO2011075461A1 (en) * | 2009-12-18 | 2011-06-23 | First Solar, Inc. | Photovoltaic device back contact |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20110215348A1 (en) * | 2010-02-03 | 2011-09-08 | Soraa, Inc. | Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials |
US8740413B1 (en) | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
PL224995B1 (pl) * | 2010-04-06 | 2017-02-28 | Inst Wysokich Ciśnień Polskiej Akademii Nauk | Podłoże do wzrostu epitaksjalnego |
US10145021B2 (en) | 2010-07-28 | 2018-12-04 | Slt Technologies, Inc. | Apparatus for processing materials at high temperatures and pressures |
JP2012158481A (ja) * | 2011-01-29 | 2012-08-23 | Soraa Inc | アンモノサーマル法によるガリウムナイトライドボウルの大規模製造設備および製造方法 |
CN116536758B (zh) * | 2023-05-04 | 2024-01-23 | 山东晶升电子科技有限公司 | 一种氮化镓晶体高压助熔剂外延生长的设备及方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3829556A (en) * | 1972-03-24 | 1974-08-13 | Bell Telephone Labor Inc | Growth of gallium nitride crystals |
CA1071068A (en) * | 1975-03-19 | 1980-02-05 | Guy-Michel Jacob | Method of manufacturing single crystals by growth from the vapour phase |
FR2313976A1 (fr) * | 1975-06-13 | 1977-01-07 | Labo Electronique Physique | Procede de fabrication de monocristaux de nitrure de gallium et monocristaux obtenus par la mise en oeuvre de ce procede |
KR900007723A (ko) * | 1988-11-29 | 1990-06-01 | 뽈 제이 레미욱스 | 질화 알루미륨 및 그 제조방법 |
US5030583A (en) * | 1988-12-02 | 1991-07-09 | Advanced Technolgy Materials, Inc. | Method of making single crystal semiconductor substrate articles and semiconductor device |
US5210051A (en) * | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
JP3352712B2 (ja) * | 1991-12-18 | 2002-12-03 | 浩 天野 | 窒化ガリウム系半導体素子及びその製造方法 |
-
1993
- 1993-08-10 PL PL93300019A patent/PL173917B1/pl not_active IP Right Cessation
-
1994
- 1994-04-27 DK DK94913850T patent/DK0713542T3/da active
- 1994-04-27 CA CA002168871A patent/CA2168871C/en not_active Expired - Fee Related
- 1994-04-27 EP EP94913850A patent/EP0713542B1/en not_active Expired - Lifetime
- 1994-04-27 ES ES94913850T patent/ES2148326T3/es not_active Expired - Lifetime
- 1994-04-27 WO PCT/PL1994/000008 patent/WO1995004845A1/en active IP Right Grant
- 1994-04-27 AU AU65848/94A patent/AU6584894A/en not_active Abandoned
- 1994-04-27 DE DE69425328T patent/DE69425328T2/de not_active Expired - Lifetime
- 1994-04-27 JP JP50636195A patent/JP3373853B2/ja not_active Expired - Fee Related
- 1994-04-27 US US08/591,595 patent/US5637531A/en not_active Expired - Lifetime
- 1994-04-27 AT AT94913850T patent/ATE194859T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
ATE194859T1 (de) | 2000-08-15 |
JP3373853B2 (ja) | 2003-02-04 |
EP0713542A1 (en) | 1996-05-29 |
DE69425328D1 (de) | 2000-08-24 |
CA2168871C (en) | 2004-05-25 |
JPH09512385A (ja) | 1997-12-09 |
US5637531A (en) | 1997-06-10 |
AU6584894A (en) | 1995-02-28 |
WO1995004845A1 (en) | 1995-02-16 |
DE69425328T2 (de) | 2000-12-14 |
DK0713542T3 (da) | 2000-10-30 |
PL173917B1 (pl) | 1998-05-29 |
PL300019A1 (en) | 1995-02-20 |
EP0713542B1 (en) | 2000-07-19 |
CA2168871A1 (en) | 1995-02-16 |
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