DE69931287D1 - Zweidimensionaler Bilddetektor und Verfahren zu dessen Herstellung - Google Patents

Zweidimensionaler Bilddetektor und Verfahren zu dessen Herstellung

Info

Publication number
DE69931287D1
DE69931287D1 DE69931287T DE69931287T DE69931287D1 DE 69931287 D1 DE69931287 D1 DE 69931287D1 DE 69931287 T DE69931287 T DE 69931287T DE 69931287 T DE69931287 T DE 69931287T DE 69931287 D1 DE69931287 D1 DE 69931287D1
Authority
DE
Germany
Prior art keywords
production
dimensional image
image detector
detector
dimensional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69931287T
Other languages
English (en)
Other versions
DE69931287T2 (de
Inventor
Yoshihiro Izumi
Osamu Teranuma
Tokihiko Shinomiya
Toshiyuki Sato
Satoshi Tokuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Sharp Corp
Original Assignee
Shimadzu Corp
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Sharp Corp filed Critical Shimadzu Corp
Application granted granted Critical
Publication of DE69931287D1 publication Critical patent/DE69931287D1/de
Publication of DE69931287T2 publication Critical patent/DE69931287T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
DE69931287T 1998-01-20 1999-01-19 Zweidimensionaler Bilddetektor und Verfahren zu dessen Herstellung Expired - Lifetime DE69931287T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP906798 1998-01-20
JP906798 1998-01-20
JP13398698A JP3649907B2 (ja) 1998-01-20 1998-05-15 二次元画像検出器およびその製造方法
JP13398698 1998-05-15

Publications (2)

Publication Number Publication Date
DE69931287D1 true DE69931287D1 (de) 2006-06-22
DE69931287T2 DE69931287T2 (de) 2007-02-01

Family

ID=26343719

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69931287T Expired - Lifetime DE69931287T2 (de) 1998-01-20 1999-01-19 Zweidimensionaler Bilddetektor und Verfahren zu dessen Herstellung

Country Status (5)

Country Link
US (1) US6262408B1 (de)
EP (1) EP0930657B1 (de)
JP (1) JP3649907B2 (de)
CN (1) CN1174491C (de)
DE (1) DE69931287T2 (de)

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JP3430040B2 (ja) * 1998-11-19 2003-07-28 シャープ株式会社 二次元画像検出器およびその製造方法
JP4036555B2 (ja) * 1999-01-14 2008-01-23 松下電器産業株式会社 実装構造体の製造方法および実装構造体
JP2001210813A (ja) 2000-01-27 2001-08-03 Sharp Corp 二次元画像検出器およびその製造方法
JP2001210855A (ja) 2000-01-27 2001-08-03 Sharp Corp 二次元画像検出器
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JP3588053B2 (ja) * 2001-02-07 2004-11-10 シャープ株式会社 電磁波検出器
US7038242B2 (en) * 2001-02-28 2006-05-02 Agilent Technologies, Inc. Amorphous semiconductor open base phototransistor array
JP2002333848A (ja) * 2001-05-10 2002-11-22 Sharp Corp 複合アクティブマトリクス基板、その製造方法、及び電磁波撮像装置
US6828545B1 (en) * 2001-05-15 2004-12-07 Raytheon Company Hybrid microelectronic array structure having electrically isolated supported islands, and its fabrication
FR2833410B1 (fr) * 2001-12-10 2004-03-19 Commissariat Energie Atomique Procede de realisation d'un dispositif d'imagerie
US7053967B2 (en) * 2002-05-23 2006-05-30 Planar Systems, Inc. Light sensitive display
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US7009663B2 (en) 2003-12-17 2006-03-07 Planar Systems, Inc. Integrated optical light sensitive active matrix liquid crystal display
US7170062B2 (en) * 2002-03-29 2007-01-30 Oy Ajat Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
JP4152684B2 (ja) * 2002-07-17 2008-09-17 松下電器産業株式会社 受光モジュールとその製造方法
KR100505355B1 (ko) * 2002-07-22 2005-08-01 남상희 고해상도 디지털 엑스레이 검출용 tft 기판
DE60328409D1 (de) * 2002-11-19 2009-08-27 Philips Intellectual Property Röntgenuntersuchungsgerät
CN1230693C (zh) * 2002-11-26 2005-12-07 张亚美 小面积像素电极直接平板x－线探测器
US20080084374A1 (en) 2003-02-20 2008-04-10 Planar Systems, Inc. Light sensitive display
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US20040246355A1 (en) * 2003-06-06 2004-12-09 Ji Ung Lee Storage capacitor array for a solid state radiation imager
US7773139B2 (en) 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
US6953935B1 (en) * 2004-05-11 2005-10-11 General Electric Company CT detector fabrication process
DE102004029589A1 (de) * 2004-06-18 2005-12-29 Tesa Ag Elektrisch anisotrop leitfähiger Schmelzkleber zur Implantierung von elektrischen Modulen in einen Kartenkörper
JP2006269465A (ja) * 2005-03-22 2006-10-05 Fuji Photo Film Co Ltd 画像記録媒体の製造方法
JP2007214191A (ja) * 2006-02-07 2007-08-23 Sumitomo Heavy Ind Ltd 放射線検出器および放射線検査装置
JP4432949B2 (ja) * 2006-09-15 2010-03-17 パナソニック株式会社 電気部品の接続方法
JP2008139124A (ja) * 2006-11-30 2008-06-19 Shimadzu Corp 放射線二次元検出器
WO2009031574A1 (ja) * 2007-09-06 2009-03-12 Konica Minolta Medical & Graphic, Inc. フラットパネルディテクタ
DE102008013412B3 (de) * 2008-03-10 2009-10-15 Siemens Aktiengesellschaft Herstellungsverfahren für ein Strahlungsdetektormodul und Herstellungsverfahren für einen Strahlungsdetektor
US8071953B2 (en) * 2008-04-29 2011-12-06 Redlen Technologies, Inc. ACF attachment for radiation detector
DE102008025199B3 (de) * 2008-05-27 2009-09-17 Siemens Aktiengesellschaft Strahlungsdetektor und Herstellungsverfahren sowie Strahlungserfassungseinrichtung
KR101672344B1 (ko) * 2010-05-20 2016-11-04 삼성전자주식회사 광센싱 회로, 상기 광센싱 회로의 구동 방법, 및 상기 광센싱 회로를 채용한 광센싱 장치
JP5676155B2 (ja) * 2010-06-23 2015-02-25 日立アロカメディカル株式会社 放射線検出器の製造方法、及び放射線検出器
US8187912B2 (en) * 2010-08-27 2012-05-29 Primestar Solar, Inc. Methods of forming an anisotropic conductive layer as a back contact in thin film photovoltaic devices
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
JP2012177624A (ja) * 2011-02-25 2012-09-13 Fujifilm Corp 放射線画像検出装置及び放射線画像検出装置の製造方法
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
CN107889344A (zh) * 2012-08-15 2018-04-06 深圳迈辽技术转移中心有限公司 软性电路板装置
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US10067580B2 (en) 2013-07-31 2018-09-04 Apple Inc. Active stylus for use with touch controller architecture
US9859316B2 (en) * 2014-06-06 2018-01-02 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
US10061449B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US9772409B2 (en) * 2014-12-30 2017-09-26 General Electric Company X-ray detector assembly
US9753151B2 (en) * 2015-07-31 2017-09-05 General Electric Company Light guide array for pet detector fabrication methods and apparatus
US10474277B2 (en) 2016-05-31 2019-11-12 Apple Inc. Position-based stylus communication
CN110473771B (zh) * 2019-07-30 2021-04-20 西北工业大学 直接转换x射线探测材料的制备方法
CN112820784B (zh) * 2020-11-24 2022-11-25 上海航天电子通讯设备研究所 一种垂直背入射同面电极高功率光导开关

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JPH082995B2 (ja) 1991-10-24 1996-01-17 富士通株式会社 マイクロカプセル型導電性フィラーの作製方法
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Also Published As

Publication number Publication date
US6262408B1 (en) 2001-07-17
DE69931287T2 (de) 2007-02-01
CN1224244A (zh) 1999-07-28
EP0930657A1 (de) 1999-07-21
JPH11274448A (ja) 1999-10-08
CN1174491C (zh) 2004-11-03
EP0930657B1 (de) 2006-05-17
JP3649907B2 (ja) 2005-05-18

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