DE69942382D1 - Sensor und verfahren zu dessen herstellung - Google Patents
Sensor und verfahren zu dessen herstellungInfo
- Publication number
- DE69942382D1 DE69942382D1 DE69942382T DE69942382T DE69942382D1 DE 69942382 D1 DE69942382 D1 DE 69942382D1 DE 69942382 T DE69942382 T DE 69942382T DE 69942382 T DE69942382 T DE 69942382T DE 69942382 D1 DE69942382 D1 DE 69942382D1
- Authority
- DE
- Germany
- Prior art keywords
- sensor
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0075—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a ceramic diaphragm, e.g. alumina, fused quartz, glass
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/023—Housings for acceleration measuring devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05575—Plural external layers
- H01L2224/0558—Plural external layers being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01006—Carbon [C]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01023—Vanadium [V]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01024—Chromium [Cr]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01033—Arsenic [As]
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- H01L2924/0104—Zirconium [Zr]
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- H01L2924/01041—Niobium [Nb]
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- H01L2924/0106—Neodymium [Nd]
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- H01L2924/01072—Hafnium [Hf]
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- H01L2924/01073—Tantalum [Ta]
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- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6111198 | 1998-03-12 | ||
PCT/JP1999/001190 WO1999046570A1 (fr) | 1998-03-12 | 1999-03-11 | Capteur et son procede de production |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69942382D1 true DE69942382D1 (de) | 2010-07-01 |
Family
ID=13161655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69942382T Expired - Lifetime DE69942382D1 (de) | 1998-03-12 | 1999-03-11 | Sensor und verfahren zu dessen herstellung |
Country Status (7)
Country | Link |
---|---|
US (1) | US6382030B1 (de) |
EP (1) | EP0982576B1 (de) |
JP (1) | JP3447062B2 (de) |
KR (1) | KR100329026B1 (de) |
CN (1) | CN1138136C (de) |
DE (1) | DE69942382D1 (de) |
WO (1) | WO1999046570A1 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3588286B2 (ja) | 1999-10-06 | 2004-11-10 | 株式会社山武 | 容量式圧力センサ |
JP3877484B2 (ja) * | 2000-02-29 | 2007-02-07 | アルプス電気株式会社 | 入力装置 |
JP3771425B2 (ja) * | 2000-07-04 | 2006-04-26 | 株式会社山武 | 容量式圧力センサおよびその製造方法 |
DE10052053A1 (de) * | 2000-10-19 | 2002-04-25 | Endress Hauser Gmbh Co | Druckmeßzelle |
JP2002350266A (ja) * | 2001-05-24 | 2002-12-04 | Kyocera Corp | 圧力検出装置用パッケージ |
WO2003083425A1 (fr) * | 2002-03-28 | 2003-10-09 | Sanyo Electric Co., Ltd. | Capteur de pression et procede de fabrication de celui-ci |
JP4250387B2 (ja) * | 2002-08-20 | 2009-04-08 | 長野計器株式会社 | 変換器およびその製造方法 |
JP4503963B2 (ja) * | 2003-09-18 | 2010-07-14 | 株式会社山武 | センサの電極取出し方法 |
JP2005172483A (ja) * | 2003-12-09 | 2005-06-30 | Toyo Commun Equip Co Ltd | 圧力センサ |
JP2005201818A (ja) * | 2004-01-16 | 2005-07-28 | Alps Electric Co Ltd | 圧力センサ |
JP2005227089A (ja) * | 2004-02-12 | 2005-08-25 | Denso Corp | 力学量センサ装置 |
JP3930862B2 (ja) * | 2004-02-13 | 2007-06-13 | 東京エレクトロン株式会社 | 容量型センサ |
DE102004018408A1 (de) * | 2004-04-16 | 2005-11-03 | Robert Bosch Gmbh | Kapazitiver Drucksensor und Verfahren zur Herstellung |
US7089798B2 (en) * | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Pressure sensor with thin membrane |
JP2006260971A (ja) * | 2005-03-17 | 2006-09-28 | Alps Electric Co Ltd | 入力装置 |
US9243756B2 (en) | 2006-04-20 | 2016-01-26 | Delta Faucet Company | Capacitive user interface for a faucet and method of forming |
US8162236B2 (en) | 2006-04-20 | 2012-04-24 | Masco Corporation Of Indiana | Electronic user interface for electronic mixing of water for residential faucets |
JP2008039593A (ja) * | 2006-08-07 | 2008-02-21 | Alps Electric Co Ltd | 静電容量型加速度センサ |
JP5305644B2 (ja) * | 2006-12-25 | 2013-10-02 | 京セラ株式会社 | 圧力センサ用パッケージおよびその製造方法、ならびに圧力センサ |
EP2149143A4 (de) * | 2007-04-20 | 2012-01-11 | Ink Logix Llc | Eingegossener kapazitiver schalter |
US8198979B2 (en) | 2007-04-20 | 2012-06-12 | Ink-Logix, Llc | In-molded resistive and shielding elements |
JP4984068B2 (ja) * | 2007-10-04 | 2012-07-25 | セイコーエプソン株式会社 | 圧力センサ |
JP2010008115A (ja) * | 2008-06-25 | 2010-01-14 | Kyocera Corp | 圧力検出装置用基体および圧力検出装置 |
KR101044914B1 (ko) * | 2009-10-30 | 2011-06-28 | (주) 유니크코리아엔아이 | 확산방지체가 형성된 정전용량형 압력센서 |
US9074357B2 (en) | 2011-04-25 | 2015-07-07 | Delta Faucet Company | Mounting bracket for electronic kitchen faucet |
US9057184B2 (en) | 2011-10-19 | 2015-06-16 | Delta Faucet Company | Insulator base for electronic faucet |
TWI518804B (zh) * | 2012-02-14 | 2016-01-21 | Asia Pacific Microsystems Inc | Monolithic compound sensor and its package |
US9333698B2 (en) | 2013-03-15 | 2016-05-10 | Delta Faucet Company | Faucet base ring |
US9464950B2 (en) | 2013-11-15 | 2016-10-11 | Rosemount Aerospace Inc. | Capacitive pressure sensors for high temperature applications |
US9621975B2 (en) * | 2014-12-03 | 2017-04-11 | Invensense, Inc. | Systems and apparatus having top port integrated back cavity micro electro-mechanical system microphones and methods of fabrication of the same |
JP6500713B2 (ja) * | 2015-09-07 | 2019-04-17 | Tdk株式会社 | 加速度センサ |
CN105424231B (zh) * | 2015-12-23 | 2019-01-08 | 深圳顺络电子股份有限公司 | 一种高精度陶瓷压力传感器 |
US10697628B2 (en) | 2017-04-25 | 2020-06-30 | Delta Faucet Company | Faucet illumination device |
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JPS58198739A (ja) * | 1982-05-14 | 1983-11-18 | Matsushita Electric Ind Co Ltd | 静電容量型圧力センサ |
US4617606A (en) * | 1985-01-31 | 1986-10-14 | Motorola, Inc. | Capacitive pressure transducer |
US4701826A (en) * | 1986-10-30 | 1987-10-20 | Ford Motor Company | High temperature pressure sensor with low parasitic capacitance |
JPS63192203A (ja) * | 1987-02-04 | 1988-08-09 | 日本鋼管株式会社 | 薄膜温度センサ |
EP0339981A3 (de) * | 1988-04-29 | 1991-10-09 | Schlumberger Industries, Inc. | Geschichteter Halbleitersensor mit Überdruckschutz |
JPH0623782B2 (ja) * | 1988-11-15 | 1994-03-30 | 株式会社日立製作所 | 静電容量式加速度センサ及び半導体圧力センサ |
JP2772111B2 (ja) * | 1990-04-27 | 1998-07-02 | 豊田工機株式会社 | 容量型圧力センサ |
JPH05264576A (ja) * | 1992-03-19 | 1993-10-12 | Hitachi Ltd | 加速度センサ |
JP2533272B2 (ja) * | 1992-11-17 | 1996-09-11 | 住友電気工業株式会社 | 半導体デバイスの製造方法 |
JPH06160420A (ja) * | 1992-11-19 | 1994-06-07 | Omron Corp | 半導体加速度センサ及びその製造方法 |
JP2852593B2 (ja) * | 1993-03-11 | 1999-02-03 | 株式会社山武 | 静電容量式圧力センサ |
US5503285A (en) * | 1993-07-26 | 1996-04-02 | Litton Systems, Inc. | Method for forming an electrostatically force balanced silicon accelerometer |
JPH07113817A (ja) * | 1993-10-15 | 1995-05-02 | Hitachi Ltd | 加速度センサ |
JPH07307410A (ja) * | 1994-05-16 | 1995-11-21 | Hitachi Ltd | 半導体装置 |
JP3348528B2 (ja) * | 1994-07-20 | 2002-11-20 | 富士通株式会社 | 半導体装置の製造方法と半導体装置及び電子回路装置の製造方法と電子回路装置 |
US5528452A (en) * | 1994-11-22 | 1996-06-18 | Case Western Reserve University | Capacitive absolute pressure sensor |
JPH08254474A (ja) * | 1995-03-15 | 1996-10-01 | Omron Corp | 半導体式センサ |
JP3369410B2 (ja) * | 1996-09-02 | 2003-01-20 | 松下電器産業株式会社 | 半導体装置の実装方法 |
EP0862051A4 (de) * | 1996-09-19 | 1999-12-08 | Hokuriku Elect Ind | Kapazitiver druckwandler |
JP3576727B2 (ja) * | 1996-12-10 | 2004-10-13 | 株式会社デンソー | 表面実装型パッケージ |
-
1999
- 1999-03-11 DE DE69942382T patent/DE69942382D1/de not_active Expired - Lifetime
- 1999-03-11 EP EP99939217A patent/EP0982576B1/de not_active Expired - Lifetime
- 1999-03-11 WO PCT/JP1999/001190 patent/WO1999046570A1/ja active IP Right Grant
- 1999-03-11 US US09/423,933 patent/US6382030B1/en not_active Expired - Lifetime
- 1999-03-11 CN CNB998002682A patent/CN1138136C/zh not_active Expired - Fee Related
- 1999-03-11 JP JP54563199A patent/JP3447062B2/ja not_active Expired - Fee Related
- 1999-03-11 KR KR1019997010405A patent/KR100329026B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0982576A4 (de) | 2007-07-18 |
CN1138136C (zh) | 2004-02-11 |
US6382030B1 (en) | 2002-05-07 |
JP3447062B2 (ja) | 2003-09-16 |
EP0982576A1 (de) | 2000-03-01 |
KR100329026B1 (ko) | 2002-03-18 |
CN1258350A (zh) | 2000-06-28 |
KR20010012451A (ko) | 2001-02-15 |
EP0982576B1 (de) | 2010-05-19 |
WO1999046570A1 (fr) | 1999-09-16 |
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