DE69924338D1 - Verfahren zur herstellung von halbleiterbauelementen mit einem graben-gate - Google Patents

Verfahren zur herstellung von halbleiterbauelementen mit einem graben-gate

Info

Publication number
DE69924338D1
DE69924338D1 DE69924338T DE69924338T DE69924338D1 DE 69924338 D1 DE69924338 D1 DE 69924338D1 DE 69924338 T DE69924338 T DE 69924338T DE 69924338 T DE69924338 T DE 69924338T DE 69924338 D1 DE69924338 D1 DE 69924338D1
Authority
DE
Germany
Prior art keywords
semiconductor components
producing semiconductor
triangle gate
triangle
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69924338T
Other languages
English (en)
Other versions
DE69924338T2 (de
DE69924338T8 (de
Inventor
Jikui Luo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69924338D1 publication Critical patent/DE69924338D1/de
Publication of DE69924338T2 publication Critical patent/DE69924338T2/de
Application granted granted Critical
Publication of DE69924338T8 publication Critical patent/DE69924338T8/de
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69924338T 1998-04-17 1999-03-29 Verfahren zur herstellung von halbleiterbauelementen mit einem graben-gate Expired - Fee Related DE69924338T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9808234 1998-04-17
GBGB9808234.0A GB9808234D0 (en) 1998-04-17 1998-04-17 Mnufacture of trench-gate semiconductor devices
PCT/IB1999/000537 WO1999054918A2 (en) 1998-04-17 1999-03-29 Manufacture of trench-gate semiconductor devices

Publications (3)

Publication Number Publication Date
DE69924338D1 true DE69924338D1 (de) 2005-04-28
DE69924338T2 DE69924338T2 (de) 2006-02-09
DE69924338T8 DE69924338T8 (de) 2006-04-27

Family

ID=10830538

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69924338T Expired - Fee Related DE69924338T8 (de) 1998-04-17 1999-03-29 Verfahren zur herstellung von halbleiterbauelementen mit einem graben-gate

Country Status (7)

Country Link
US (1) US6087224A (de)
EP (1) EP0996969B1 (de)
JP (1) JP2002505810A (de)
KR (1) KR100538603B1 (de)
DE (1) DE69924338T8 (de)
GB (1) GB9808234D0 (de)
WO (1) WO1999054918A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9922764D0 (en) * 1999-09-28 1999-11-24 Koninkl Philips Electronics Nv Manufacture of trench-gate semiconductor devices
US6285060B1 (en) * 1999-12-30 2001-09-04 Siliconix Incorporated Barrier accumulation-mode MOSFET
KR100796826B1 (ko) * 2000-08-17 2008-01-22 엔엑스피 비 브이 반도체 디바이스 제조 방법, 트렌치 게이트 전력 트랜지스터 및 메모리 디바이스
JP4932088B2 (ja) 2001-02-19 2012-05-16 ルネサスエレクトロニクス株式会社 絶縁ゲート型半導体装置の製造方法
WO2002089195A2 (en) 2001-04-28 2002-11-07 Koninklijke Philips Electronics N.V. Method of manufacturing a trench-gate semiconductor device
WO2002089196A2 (en) * 2001-04-28 2002-11-07 Koninklijke Philips Electronics N.V. Trench-gate semiconductor devices and their manufacture
GB0117949D0 (en) 2001-07-24 2001-09-19 Koninkl Philips Electronics Nv Trench-gate semiconductor devices and their manufacture
GB0118000D0 (en) * 2001-07-24 2001-09-19 Koninkl Philips Electronics Nv Manufacture of semiconductor devices with schottky barriers
GB0122122D0 (en) * 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Trench-gate semiconductor devices and their manufacture
US7045857B2 (en) * 2004-03-26 2006-05-16 Siliconix Incorporated Termination for trench MIS device having implanted drain-drift region
JP2007194333A (ja) * 2006-01-18 2007-08-02 Elpida Memory Inc 半導体装置の製造方法
JP5048273B2 (ja) * 2006-05-10 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置
US20080206944A1 (en) * 2007-02-23 2008-08-28 Pan-Jit International Inc. Method for fabricating trench DMOS transistors and schottky elements
JP2009141260A (ja) * 2007-12-10 2009-06-25 Elpida Memory Inc 半導体装置、及びその製造方法
JP2009302510A (ja) * 2008-03-03 2009-12-24 Fuji Electric Device Technology Co Ltd トレンチゲート型半導体装置およびその製造方法
CN105470139A (zh) * 2014-09-12 2016-04-06 上海华虹宏力半导体制造有限公司 制造沟槽型功率器件的方法
CN116646391A (zh) * 2023-07-26 2023-08-25 深圳市锐骏半导体股份有限公司 一种沟槽功率器件及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2239561B (en) * 1989-12-28 1993-10-20 Nissan Motor Method of manufacturing a field effect transistor
JP2606404B2 (ja) * 1990-04-06 1997-05-07 日産自動車株式会社 半導体装置
KR940002400B1 (ko) * 1991-05-15 1994-03-24 금성일렉트론 주식회사 리세스 게이트를 갖는 반도체장치의 제조방법
JPH05304297A (ja) * 1992-01-29 1993-11-16 Nec Corp 電力用半導体装置およびその製造方法
GB9207860D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor component
US5910669A (en) * 1992-07-24 1999-06-08 Siliconix Incorporated Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
GB9306895D0 (en) * 1993-04-01 1993-05-26 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
GB9313843D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd A semiconductor device comprising an insulated gate field effect transistor
JP3307785B2 (ja) * 1994-12-13 2002-07-24 三菱電機株式会社 絶縁ゲート型半導体装置
US5567634A (en) * 1995-05-01 1996-10-22 National Semiconductor Corporation Method of fabricating self-aligned contact trench DMOS transistors
US5972741A (en) * 1996-10-31 1999-10-26 Sanyo Electric Co., Ltd. Method of manufacturing semiconductor device
GB9700923D0 (en) * 1997-01-17 1997-03-05 Philips Electronics Nv Semiconductor devices

Also Published As

Publication number Publication date
EP0996969B1 (de) 2005-03-23
US6087224A (en) 2000-07-11
GB9808234D0 (en) 1998-06-17
KR20010013955A (ko) 2001-02-26
DE69924338T2 (de) 2006-02-09
WO1999054918A3 (en) 2000-02-24
EP0996969A2 (de) 2000-05-03
KR100538603B1 (ko) 2005-12-22
WO1999054918A2 (en) 1999-10-28
JP2002505810A (ja) 2002-02-19
DE69924338T8 (de) 2006-04-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee