DE69840327D1 - Verfahren zur herstellung einer gate-elektrode - Google Patents
Verfahren zur herstellung einer gate-elektrodeInfo
- Publication number
- DE69840327D1 DE69840327D1 DE69840327T DE69840327T DE69840327D1 DE 69840327 D1 DE69840327 D1 DE 69840327D1 DE 69840327 T DE69840327 T DE 69840327T DE 69840327 T DE69840327 T DE 69840327T DE 69840327 D1 DE69840327 D1 DE 69840327D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- gate electrode
- gate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/889,622 US6039621A (en) | 1997-07-07 | 1997-07-07 | Gate electrode formation method |
PCT/US1998/009699 WO1999003123A1 (en) | 1997-07-07 | 1998-05-12 | Gate electrode formation method |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69840327D1 true DE69840327D1 (de) | 2009-01-22 |
Family
ID=25395456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69840327T Expired - Lifetime DE69840327D1 (de) | 1997-07-07 | 1998-05-12 | Verfahren zur herstellung einer gate-elektrode |
Country Status (6)
Country | Link |
---|---|
US (2) | US6039621A (de) |
EP (1) | EP0995213B1 (de) |
JP (1) | JP3679420B2 (de) |
KR (1) | KR100509259B1 (de) |
DE (1) | DE69840327D1 (de) |
WO (1) | WO1999003123A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6095883A (en) * | 1997-07-07 | 2000-08-01 | Candlescent Technologies Corporation | Spatially uniform deposition of polymer particles during gate electrode formation |
US6039621A (en) * | 1997-07-07 | 2000-03-21 | Candescent Technologies Corporation | Gate electrode formation method |
JPH11233004A (ja) * | 1998-02-17 | 1999-08-27 | Sony Corp | 電子放出装置の製造方法 |
JP2002517087A (ja) * | 1998-05-22 | 2002-06-11 | ザ ユニバーシティ オブ バーミンガム | 表面構造体の製造方法 |
WO2003089990A2 (en) * | 2002-04-19 | 2003-10-30 | Applied Materials, Inc. | Process for etching photomasks |
US7485024B2 (en) * | 2005-10-12 | 2009-02-03 | Chunghwa Picture Tubes, Ltd. | Fabricating method of field emission triodes |
JP2007287403A (ja) * | 2006-04-14 | 2007-11-01 | Futaba Corp | 電界電子放出素子の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3116398B2 (ja) * | 1991-03-13 | 2000-12-11 | ソニー株式会社 | 平面型電子放出素子の製造方法及び平面型電子放出素子 |
US5199917A (en) * | 1991-12-09 | 1993-04-06 | Cornell Research Foundation, Inc. | Silicon tip field emission cathode arrays and fabrication thereof |
US5283500A (en) * | 1992-05-28 | 1994-02-01 | At&T Bell Laboratories | Flat panel field emission display apparatus |
JP2940360B2 (ja) * | 1993-09-14 | 1999-08-25 | 双葉電子工業株式会社 | 電界放出素子アレイの製造方法 |
US5504385A (en) * | 1994-08-31 | 1996-04-02 | At&T Corp. | Spaced-gate emission device and method for making same |
US5601466A (en) * | 1995-04-19 | 1997-02-11 | Texas Instruments Incorporated | Method for fabricating field emission device metallization |
US5865659A (en) * | 1996-06-07 | 1999-02-02 | Candescent Technologies Corporation | Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements |
US5865657A (en) * | 1996-06-07 | 1999-02-02 | Candescent Technologies Corporation | Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material |
US6039621A (en) * | 1997-07-07 | 2000-03-21 | Candescent Technologies Corporation | Gate electrode formation method |
-
1997
- 1997-07-07 US US08/889,622 patent/US6039621A/en not_active Expired - Lifetime
-
1998
- 1998-05-12 EP EP98922233A patent/EP0995213B1/de not_active Expired - Lifetime
- 1998-05-12 JP JP50862599A patent/JP3679420B2/ja not_active Expired - Fee Related
- 1998-05-12 DE DE69840327T patent/DE69840327D1/de not_active Expired - Lifetime
- 1998-05-12 WO PCT/US1998/009699 patent/WO1999003123A1/en active IP Right Grant
- 1998-05-12 KR KR10-2000-7000102A patent/KR100509259B1/ko not_active IP Right Cessation
-
1999
- 1999-10-21 US US09/425,835 patent/US6217403B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0995213B1 (de) | 2008-12-10 |
EP0995213A4 (de) | 2001-04-04 |
JP2002509635A (ja) | 2002-03-26 |
KR100509259B1 (ko) | 2005-08-22 |
EP0995213A1 (de) | 2000-04-26 |
WO1999003123A1 (en) | 1999-01-21 |
JP3679420B2 (ja) | 2005-08-03 |
KR20010021544A (ko) | 2001-03-15 |
US6217403B1 (en) | 2001-04-17 |
US6039621A (en) | 2000-03-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |