DE69910540D1 - Verfahren zur kristallzüchtung auf einem substrat - Google Patents

Verfahren zur kristallzüchtung auf einem substrat

Info

Publication number
DE69910540D1
DE69910540D1 DE69910540T DE69910540T DE69910540D1 DE 69910540 D1 DE69910540 D1 DE 69910540D1 DE 69910540 T DE69910540 T DE 69910540T DE 69910540 T DE69910540 T DE 69910540T DE 69910540 D1 DE69910540 D1 DE 69910540D1
Authority
DE
Germany
Prior art keywords
substrate
crystal breeding
breeding
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69910540T
Other languages
English (en)
Other versions
DE69910540T2 (de
Inventor
Andre Leycuras
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR9814831A external-priority patent/FR2786203B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Publication of DE69910540D1 publication Critical patent/DE69910540D1/de
Application granted granted Critical
Publication of DE69910540T2 publication Critical patent/DE69910540T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69910540T 1998-11-25 1999-11-25 Verfahren zur kristallzüchtung auf einem substrat Expired - Lifetime DE69910540T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
FR9814831 1998-11-25
FR9814831A FR2786203B1 (fr) 1998-11-25 1998-11-25 Reacteur pour depot chimique en phase vapeur et procede pour sa mise en oeuvre
FR9905840 1999-05-07
FR9905840A FR2786208B1 (fr) 1998-11-25 1999-05-07 Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre
PCT/FR1999/002910 WO2000031322A1 (fr) 1998-11-25 1999-11-25 Procede de croissance cristalline sur substrat

Publications (2)

Publication Number Publication Date
DE69910540D1 true DE69910540D1 (de) 2003-09-25
DE69910540T2 DE69910540T2 (de) 2004-06-24

Family

ID=26234675

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69932919T Expired - Lifetime DE69932919T2 (de) 1998-11-25 1999-11-25 Cvd-reaktor und verfahren zum betrieb desselben
DE69910540T Expired - Lifetime DE69910540T2 (de) 1998-11-25 1999-11-25 Verfahren zur kristallzüchtung auf einem substrat

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69932919T Expired - Lifetime DE69932919T2 (de) 1998-11-25 1999-11-25 Cvd-reaktor und verfahren zum betrieb desselben

Country Status (9)

Country Link
US (2) US6402836B1 (de)
EP (2) EP1049813B1 (de)
JP (2) JP2002530266A (de)
KR (2) KR100747940B1 (de)
AU (2) AU1280500A (de)
DE (2) DE69932919T2 (de)
ES (1) ES2205903T3 (de)
FR (1) FR2786208B1 (de)
WO (2) WO2000031322A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
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US6534026B2 (en) * 2000-02-15 2003-03-18 The Fox Group, Inc. Low defect density silicon carbide
US6896738B2 (en) * 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
FR2833619A1 (fr) * 2001-12-17 2003-06-20 Commissariat Energie Atomique Procede de fabrication de substrats semi-conducteurs cristallins
FR2836159B1 (fr) * 2002-02-15 2004-05-07 Centre Nat Rech Scient Procede de formation de couche de carbure de silicium ou de nitrure d'element iii sur un substrat adapte
US7473873B2 (en) * 2004-05-18 2009-01-06 The Board Of Trustees Of The University Of Arkansas Apparatus and methods for synthesis of large size batches of carbon nanostructures
WO2005113854A2 (en) * 2004-05-18 2005-12-01 Board Of Trustees Of The University Of Arkansas Apparatus and methods of making nanostructures by inductive heating
US7365289B2 (en) * 2004-05-18 2008-04-29 The United States Of America As Represented By The Department Of Health And Human Services Production of nanostructures by curie point induction heating
US7404858B2 (en) * 2005-09-16 2008-07-29 Mississippi State University Method for epitaxial growth of silicon carbide
KR100893408B1 (ko) * 2007-08-22 2009-04-17 주식회사 테라세미콘 기판 홀더
US10407769B2 (en) 2016-03-18 2019-09-10 Goodrich Corporation Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces
CN105749832A (zh) * 2016-04-21 2016-07-13 常州大学 一种具有脉冲变径微结构的微反应器系统
FI3484810T3 (fi) * 2016-07-15 2023-11-09 Oned Mat Inc Valmistuslaitteisto ja menetelmä piinanolankojen valmistamiseksi hiilipohjaisista jauheista käytettäviksi akuissa
US10632447B2 (en) 2018-08-28 2020-04-28 Molecule Works Inc. Reactor for hydrothermal growth of structured materials
JPWO2020218483A1 (de) * 2019-04-26 2020-10-29
KR102500070B1 (ko) * 2021-03-30 2023-02-15 주식회사 테스 유기금속화학기상증착장치

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GB1139802A (en) * 1964-10-30 1969-01-15 Mini Of Technology Growth of crystalline layers
GB1332348A (en) * 1970-11-19 1973-10-03 Nat Res Corp Silicon carbide junction diode
JPS5583226A (en) * 1978-12-19 1980-06-23 Fujitsu Ltd Gas phase growing device
US4582561A (en) * 1979-01-25 1986-04-15 Sharp Kabushiki Kaisha Method for making a silicon carbide substrate
US4315479A (en) * 1980-06-27 1982-02-16 Atomel Corporation Silicon wafer steam oxidizing apparatus
JPS58139424A (ja) 1982-02-15 1983-08-18 Hitachi Ltd 気相成長装置
JPS58158914A (ja) * 1982-03-16 1983-09-21 Semiconductor Res Found 半導体製造装置
US4423701A (en) * 1982-03-29 1984-01-03 Energy Conversion Devices, Inc. Glow discharge deposition apparatus including a non-horizontally disposed cathode
JPS59928A (ja) * 1982-06-25 1984-01-06 Ushio Inc 光加熱装置
US4601260A (en) * 1985-04-01 1986-07-22 Sovonics Solar Systems Vertical semiconductor processor
US4614672A (en) * 1985-06-06 1986-09-30 The United States Of America As Represented By The Secretary Of The Navy Liquid phase epitaxy (LPE) of silicon carbide
FR2591616A1 (fr) 1985-12-17 1987-06-19 Labo Electronique Physique Chambre de reacteur pour croissance epitaxiale en phase vapeur des materiaux semiconducteurs.
US4747367A (en) * 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
DE3721636A1 (de) 1987-06-30 1989-01-12 Aixtron Gmbh Quarzglasreaktor fuer mocvd-anlagen
JPH0676275B2 (ja) * 1988-07-21 1994-09-28 三菱電機株式会社 気相エピタキシャル成長装置および基板の加熱方法
US5194401A (en) * 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
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Also Published As

Publication number Publication date
KR20010040405A (ko) 2001-05-15
AU1280500A (en) 2000-06-13
FR2786208B1 (fr) 2001-02-09
KR20010040406A (ko) 2001-05-15
KR100643062B1 (ko) 2006-11-10
EP1049820B1 (de) 2003-08-20
DE69932919T2 (de) 2007-08-30
EP1049813B1 (de) 2006-08-23
ES2205903T3 (es) 2004-05-01
JP2002530265A (ja) 2002-09-17
EP1049820A1 (de) 2000-11-08
US6709520B1 (en) 2004-03-23
WO2000031322A1 (fr) 2000-06-02
JP2002530266A (ja) 2002-09-17
EP1049813A1 (de) 2000-11-08
KR100747940B1 (ko) 2007-08-08
JP4693993B2 (ja) 2011-06-01
DE69932919D1 (de) 2006-10-05
AU1280600A (en) 2000-06-13
DE69910540T2 (de) 2004-06-24
US6402836B1 (en) 2002-06-11
WO2000031317A1 (fr) 2000-06-02
FR2786208A1 (fr) 2000-05-26
EP1049820B9 (de) 2004-07-14

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