DE60024227D1 - Verfahren zur photolackbeschichtung auf ein substrat - Google Patents

Verfahren zur photolackbeschichtung auf ein substrat

Info

Publication number
DE60024227D1
DE60024227D1 DE60024227T DE60024227T DE60024227D1 DE 60024227 D1 DE60024227 D1 DE 60024227D1 DE 60024227 T DE60024227 T DE 60024227T DE 60024227 T DE60024227 T DE 60024227T DE 60024227 D1 DE60024227 D1 DE 60024227D1
Authority
DE
Germany
Prior art keywords
photoack
coating
substrate
photoack coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60024227T
Other languages
English (en)
Other versions
DE60024227T2 (de
Inventor
P Thakur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steag RTP Systems Inc
Original Assignee
Steag RTP Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steag RTP Systems Inc filed Critical Steag RTP Systems Inc
Application granted granted Critical
Publication of DE60024227D1 publication Critical patent/DE60024227D1/de
Publication of DE60024227T2 publication Critical patent/DE60024227T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
DE60024227T 1999-01-14 2000-01-03 Verfahren zur photolackbeschichtung auf ein substrat Expired - Fee Related DE60024227T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US229872 1981-01-30
US09/229,872 US6174651B1 (en) 1999-01-14 1999-01-14 Method for depositing atomized materials onto a substrate utilizing light exposure for heating
PCT/IB2000/000002 WO2000042474A1 (en) 1999-01-14 2000-01-03 Method for depositing photoresist onto a substrate

Publications (2)

Publication Number Publication Date
DE60024227D1 true DE60024227D1 (de) 2005-12-29
DE60024227T2 DE60024227T2 (de) 2006-08-24

Family

ID=22863006

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60024227T Expired - Fee Related DE60024227T2 (de) 1999-01-14 2000-01-03 Verfahren zur photolackbeschichtung auf ein substrat

Country Status (7)

Country Link
US (1) US6174651B1 (de)
EP (1) EP1141779B1 (de)
JP (1) JP2003523614A (de)
KR (1) KR100644457B1 (de)
DE (1) DE60024227T2 (de)
TW (1) TW452850B (de)
WO (1) WO2000042474A1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4625183B2 (ja) * 1998-11-20 2011-02-02 ステアーグ アール ティ ピー システムズ インコーポレイテッド 半導体ウェハのための急速加熱及び冷却装置
KR100367502B1 (ko) * 1999-04-08 2003-01-10 주식회사 하이닉스반도체 반도체소자의 미세패턴 제조방법
US6558877B1 (en) * 1999-06-01 2003-05-06 Ball Semiconductor, Inc. Jet coating method for semiconductor processing
US6569249B1 (en) 2000-04-18 2003-05-27 Clemson University Process for forming layers on substrates
US6808758B1 (en) 2000-06-09 2004-10-26 Mattson Technology, Inc. Pulse precursor deposition process for forming layers in semiconductor devices
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
US6902622B2 (en) * 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
US6680263B2 (en) * 2002-02-12 2004-01-20 Sandia National Laboratories Method for applying a photoresist layer to a substrate having a preexisting topology
GB0211354D0 (en) * 2002-05-17 2002-06-26 Surface Innovations Ltd Atomisation of a precursor into an excitation medium for coating a remote substrate
US7734439B2 (en) 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
JP2004066138A (ja) * 2002-08-07 2004-03-04 Fujimori Gijutsu Kenkyusho:Kk 薄膜形成方法及びパターン形成方法並びにパターン形成装置
US7101812B2 (en) * 2002-09-20 2006-09-05 Mattson Technology, Inc. Method of forming and/or modifying a dielectric film on a semiconductor surface
US6835914B2 (en) * 2002-11-05 2004-12-28 Mattson Technology, Inc. Apparatus and method for reducing stray light in substrate processing chambers
AU2003281895A1 (en) * 2002-12-05 2004-06-23 Unaxis Balzers Ag Method and apparatus for control of layer thicknesses
US7654596B2 (en) * 2003-06-27 2010-02-02 Mattson Technology, Inc. Endeffectors for handling semiconductor wafers
US7122828B2 (en) * 2003-09-24 2006-10-17 Lucent Technologies, Inc. Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
US8450723B2 (en) * 2003-11-04 2013-05-28 Alcatel Lucent Apparatus having an aromatic dielectric and an aromatic organic semiconductor including an alkyl chain
DE10351963B4 (de) * 2003-11-07 2013-08-22 Süss Microtec Lithography Gmbh Verfahren zum Belacken von Halbleitersubstraten
US7115900B2 (en) * 2003-11-26 2006-10-03 Lucent Technologies Inc. Devices having patterned regions of polycrystalline organic semiconductors, and methods of making the same
JP4383268B2 (ja) * 2004-06-29 2009-12-16 アルプス電気株式会社 スプレーコート方法及びスプレーコート装置
JP2006167849A (ja) * 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
EP1840940B8 (de) * 2006-03-28 2014-11-26 Thallner, Erich, Dipl.-Ing. Vorrichtung und Verfahren zum Beschichten eines mikro- und/oder nanostrukturierten Struktursubstrats
US20080241489A1 (en) * 2007-03-30 2008-10-02 Renesas Technology Corp. Method of forming resist pattern and semiconductor device manufactured with the same
US7976216B2 (en) * 2007-12-20 2011-07-12 Mattson Technology, Inc. Determining the temperature of silicon at high temperatures
US20120108040A1 (en) * 2010-11-01 2012-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Vaporizing polymer spray deposition system
US9595440B2 (en) 2010-11-01 2017-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of using a vaporizing spray system to perform a trimming process
US9632411B2 (en) * 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
KR101878578B1 (ko) * 2013-11-27 2018-07-13 도쿄엘렉트론가부시키가이샤 광학 프로젝션을 이용한 기판 튜닝 시스템 및 방법
US8889222B1 (en) * 2013-12-03 2014-11-18 Advenira Enterprises, Inc. Coating material distribution using simultaneous rotation and vibration
WO2018020863A1 (ja) * 2016-07-27 2018-02-01 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置、及びコンピュータ読み取り可能な記録媒体
RU2654329C1 (ru) * 2016-12-28 2018-05-17 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Способ получения фоторезистивного слоя на различных подложках
JP6909584B2 (ja) * 2017-01-24 2021-07-28 株式会社Ｓｃｒｅｅｎ Ｓｐｅ テック 塗布液塗布方法
RU2666175C1 (ru) * 2017-12-26 2018-09-06 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Способ формирования фоторезистивной пленки из раствора на поверхности подложки
RU2761134C2 (ru) * 2020-05-26 2021-12-06 Открытое акционерное общество "Научно-исследовательский институт полупроводникового машиностроения" (ОАО "НИИПМ") Устройство для нанесения фоторезиста на полупроводниковые пластины
CN115613005A (zh) * 2021-07-16 2023-01-17 长鑫存储技术有限公司 雾化装置与薄膜沉积系统

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL259570A (de) 1959-12-31
US3518110A (en) 1964-07-23 1970-06-30 Gillette Co Razor blade and method of making same
DD63018A (de) 1966-03-16
US3652342A (en) 1967-06-07 1972-03-28 Gillette Co Razor blades and processes for the preparation thereof
US3589606A (en) 1968-12-23 1971-06-29 Gillette Co Electrostatic spray coating apparatus
FR2110622A5 (de) 1970-10-23 1972-06-02 Commissariat Energie Atomique
JPS557008B2 (de) * 1972-02-29 1980-02-21
US4012551A (en) 1974-02-05 1977-03-15 Warner-Lambert Company Coated razor blade
JPS622733Y2 (de) 1978-09-11 1987-01-22
US4296208A (en) 1980-09-12 1981-10-20 International Harvester Company Methods of preparing polyimides and polyimide precursors
US4305796A (en) 1980-09-12 1981-12-15 International Harvester Company Methods of preparing polyimides and artifacts composed thereof
JPS5916327A (ja) 1982-07-19 1984-01-27 Agency Of Ind Science & Technol 薄膜の製造方法
US4495889A (en) 1982-11-24 1985-01-29 Riley Thomas J Polymeric film coating apparatus
US4562088A (en) 1984-06-06 1985-12-31 Nordson Corporation Process and apparatus for maintaining a constant flow rate in a painting system
JP2635021B2 (ja) 1985-09-26 1997-07-30 宣夫 御子柴 堆積膜形成法及びこれに用いる装置
US5512102A (en) 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
JPS62274722A (ja) * 1986-05-23 1987-11-28 Nec Corp レジスト膜の形成方法
SU1409340A1 (ru) 1986-06-30 1988-07-15 Предприятие П/Я А-7746 Устройство дл фотополимеризации лаковых покрытий
US4986214A (en) 1986-12-16 1991-01-22 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus
US4919077A (en) 1986-12-27 1990-04-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor producing apparatus
CH673962A5 (en) 1987-11-10 1990-04-30 Glatt Gmbh Particle coating appts. - with swirl chamber, spray head and UV light polymerisation
US5048163A (en) 1987-12-07 1991-09-17 Asmus John F System for processing semiconductor materials
GB8813154D0 (en) * 1988-06-03 1988-07-06 Vickers Plc Improvements in/relating to radiation sensitive devices
SU1579579A1 (ru) 1988-08-11 1990-07-23 В. И. Сорокин, В. В. Сорокин и В. Д. Сорокина Вибровозбудитель
WO1990003597A1 (en) * 1988-09-30 1990-04-05 Macdermid, Incorporated Soft-bake treatment of photoresists
US5456945A (en) 1988-12-27 1995-10-10 Symetrix Corporation Method and apparatus for material deposition
JPH02194164A (ja) 1989-01-20 1990-07-31 Sumitomo Metal Ind Ltd レーザ光を用いた皮膜形成方法
US4996080A (en) * 1989-04-05 1991-02-26 Olin Hunt Specialty Products Inc. Process for coating a photoresist composition onto a substrate
CA2033293C (en) 1989-12-28 2002-04-09 Yutaka Hashimoto Active energy ray-curable composition and applicable method
US5134961A (en) 1990-09-10 1992-08-04 The Regents Of The University Of California Electrically actuated variable flow control system
US5217559A (en) 1990-12-10 1993-06-08 Texas Instruments Incorporated Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing
US5174826A (en) 1991-12-06 1992-12-29 General Electric Company Laser-assisted chemical vapor deposition
JPH05243160A (ja) 1992-02-28 1993-09-21 Nec Yamagata Ltd 半導体デバイス製造用プラズマｃｖｄ装置
US5330883A (en) * 1992-06-29 1994-07-19 Lsi Logic Corporation Techniques for uniformizing photoresist thickness and critical dimension of underlying features
US5238471A (en) 1992-10-14 1993-08-24 E. I. Du Pont De Nemours And Company Spray-applied fluoropolymer films for gas separation membranes
TW268905B (de) * 1993-05-20 1996-01-21 Tokyo Electron Co Ltd
US5451260A (en) 1994-04-15 1995-09-19 Cornell Research Foundation, Inc. Method and apparatus for CVD using liquid delivery system with an ultrasonic nozzle
AU4974196A (en) 1995-03-20 1996-10-08 Dymax Corporation Encapsulation formulation, method, and apparatus
JPH098032A (ja) 1995-06-20 1997-01-10 Sony Corp 絶縁膜形成方法
US5609995A (en) * 1995-08-30 1997-03-11 Micron Technology, Inc. Method for forming a thin uniform layer of resist for lithography
SE9600524D0 (sv) 1996-02-14 1996-02-14 Abb Research Ltd A method and a device for oxidation of a semiconductor layer of SiC
US5820942A (en) 1996-12-20 1998-10-13 Ag Associates Process for depositing a material on a substrate using light energy

Also Published As

Publication number Publication date
EP1141779B1 (de) 2005-11-23
JP2003523614A (ja) 2003-08-05
KR20010075595A (ko) 2001-08-09
KR100644457B1 (ko) 2006-11-10
TW452850B (en) 2001-09-01
DE60024227T2 (de) 2006-08-24
EP1141779A1 (de) 2001-10-10
WO2000042474A1 (en) 2000-07-20
US6174651B1 (en) 2001-01-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee