FR2786203B1 - Reacteur pour depot chimique en phase vapeur et procede pour sa mise en oeuvre - Google Patents

Reacteur pour depot chimique en phase vapeur et procede pour sa mise en oeuvre

Info

Publication number
FR2786203B1
FR2786203B1 FR9814831A FR9814831A FR2786203B1 FR 2786203 B1 FR2786203 B1 FR 2786203B1 FR 9814831 A FR9814831 A FR 9814831A FR 9814831 A FR9814831 A FR 9814831A FR 2786203 B1 FR2786203 B1 FR 2786203B1
Authority
FR
France
Prior art keywords
reactor
implementation
vapor deposition
chemical vapor
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9814831A
Other languages
English (en)
Other versions
FR2786203A1 (fr
Inventor
Andre Leycuras
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR9814831A priority Critical patent/FR2786203B1/fr
Priority to FR9905840A priority patent/FR2786208B1/fr
Priority to US09/600,904 priority patent/US6402836B1/en
Priority to AU12806/00A priority patent/AU1280600A/en
Priority to EP99956143A priority patent/EP1049813B1/fr
Priority to JP2000584124A priority patent/JP4693993B2/ja
Priority to JP2000584126A priority patent/JP2002530266A/ja
Priority to KR1020007008111A priority patent/KR100643062B1/ko
Priority to KR1020007008116A priority patent/KR100747940B1/ko
Priority to PCT/FR1999/002910 priority patent/WO2000031322A1/fr
Priority to EP99956144A priority patent/EP1049820B9/fr
Priority to US09/601,109 priority patent/US6709520B1/en
Priority to AU12805/00A priority patent/AU1280500A/en
Priority to DE69910540T priority patent/DE69910540T2/de
Priority to DE69932919T priority patent/DE69932919T2/de
Priority to ES99956144T priority patent/ES2205903T3/es
Priority to PCT/FR1999/002909 priority patent/WO2000031317A1/fr
Publication of FR2786203A1 publication Critical patent/FR2786203A1/fr
Application granted granted Critical
Publication of FR2786203B1 publication Critical patent/FR2786203B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
FR9814831A 1998-11-25 1998-11-25 Reacteur pour depot chimique en phase vapeur et procede pour sa mise en oeuvre Expired - Lifetime FR2786203B1 (fr)

Priority Applications (17)

Application Number Priority Date Filing Date Title
FR9814831A FR2786203B1 (fr) 1998-11-25 1998-11-25 Reacteur pour depot chimique en phase vapeur et procede pour sa mise en oeuvre
FR9905840A FR2786208B1 (fr) 1998-11-25 1999-05-07 Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre
US09/601,109 US6709520B1 (en) 1998-11-25 1999-11-25 Reactor and method for chemical vapor deposition
EP99956143A EP1049813B1 (fr) 1998-11-25 1999-11-25 Reacteur et procede pour depot chimique en phase vapeur
JP2000584124A JP4693993B2 (ja) 1998-11-25 1999-11-25 蒸着リアクタおよび蒸着方法
JP2000584126A JP2002530266A (ja) 1998-11-25 1999-11-25 基板上に結晶成長させる方法
KR1020007008111A KR100643062B1 (ko) 1998-11-25 1999-11-25 기판상에서의 에피택셜 성장 방법
KR1020007008116A KR100747940B1 (ko) 1998-11-25 1999-11-25 화학증착 반응장치 및 방법
US09/600,904 US6402836B1 (en) 1998-11-25 1999-11-25 Method for epitaxial growth on a substrate
EP99956144A EP1049820B9 (fr) 1998-11-25 1999-11-25 Prodede de croissance cristalline sur substrat
AU12806/00A AU1280600A (en) 1998-11-25 1999-11-25 Method for epitaxial growth on a substrate
AU12805/00A AU1280500A (en) 1998-11-25 1999-11-25 Reactor and method for chemical vapour deposition
DE69910540T DE69910540T2 (de) 1998-11-25 1999-11-25 Verfahren zur kristallzüchtung auf einem substrat
DE69932919T DE69932919T2 (de) 1998-11-25 1999-11-25 Cvd-reaktor und verfahren zum betrieb desselben
ES99956144T ES2205903T3 (es) 1998-11-25 1999-11-25 Procedimiento de crecimiento cristalino sobre substrato.
PCT/FR1999/002909 WO2000031317A1 (fr) 1998-11-25 1999-11-25 Reacteur et procede pour depot chimique en phase vapeur
PCT/FR1999/002910 WO2000031322A1 (fr) 1998-11-25 1999-11-25 Procede de croissance cristalline sur substrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9814831A FR2786203B1 (fr) 1998-11-25 1998-11-25 Reacteur pour depot chimique en phase vapeur et procede pour sa mise en oeuvre

Publications (2)

Publication Number Publication Date
FR2786203A1 FR2786203A1 (fr) 2000-05-26
FR2786203B1 true FR2786203B1 (fr) 2001-10-19

Family

ID=9533160

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9814831A Expired - Lifetime FR2786203B1 (fr) 1998-11-25 1998-11-25 Reacteur pour depot chimique en phase vapeur et procede pour sa mise en oeuvre

Country Status (1)

Country Link
FR (1) FR2786203B1 (fr)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583226A (en) * 1978-12-19 1980-06-23 Fujitsu Ltd Gas phase growing device
JPS58139424A (ja) * 1982-02-15 1983-08-18 Hitachi Ltd 気相成長装置
FR2591616A1 (fr) * 1985-12-17 1987-06-19 Labo Electronique Physique Chambre de reacteur pour croissance epitaxiale en phase vapeur des materiaux semiconducteurs.
JPH0547674A (ja) * 1991-08-13 1993-02-26 Fujitsu Ltd 気相成長装置および気相成長方法
JPH0897159A (ja) * 1994-09-29 1996-04-12 Handotai Process Kenkyusho:Kk エピタキシャル成長方法および成長装置
JP3444991B2 (ja) * 1994-10-14 2003-09-08 東海カーボン株式会社 セラミックス被膜の形成方法
JP3493880B2 (ja) * 1996-02-28 2004-02-03 信越半導体株式会社 輻射加熱装置および加熱方法
US5759263A (en) * 1996-12-05 1998-06-02 Abb Research Ltd. Device and a method for epitaxially growing objects by cvd

Also Published As

Publication number Publication date
FR2786203A1 (fr) 2000-05-26

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