FR2554132B1 - Procede de depot de siliciure metallique par depot de vapeur chimique, exalte par du plasma - Google Patents
Procede de depot de siliciure metallique par depot de vapeur chimique, exalte par du plasmaInfo
- Publication number
- FR2554132B1 FR2554132B1 FR8416908A FR8416908A FR2554132B1 FR 2554132 B1 FR2554132 B1 FR 2554132B1 FR 8416908 A FR8416908 A FR 8416908A FR 8416908 A FR8416908 A FR 8416908A FR 2554132 B1 FR2554132 B1 FR 2554132B1
- Authority
- FR
- France
- Prior art keywords
- deposition
- exalted
- plasma
- chemical vapor
- metal silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008021 deposition Effects 0.000 title 2
- 229910021332 silicide Inorganic materials 0.000 title 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/547,050 US4557943A (en) | 1983-10-31 | 1983-10-31 | Metal-silicide deposition using plasma-enhanced chemical vapor deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2554132A1 FR2554132A1 (fr) | 1985-05-03 |
FR2554132B1 true FR2554132B1 (fr) | 1988-09-23 |
Family
ID=24183136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8416908A Expired FR2554132B1 (fr) | 1983-10-31 | 1984-10-30 | Procede de depot de siliciure metallique par depot de vapeur chimique, exalte par du plasma |
Country Status (6)
Country | Link |
---|---|
US (1) | US4557943A (fr) |
JP (1) | JPS6096763A (fr) |
DE (1) | DE3439853A1 (fr) |
FR (1) | FR2554132B1 (fr) |
GB (1) | GB2148946B (fr) |
NL (1) | NL8403011A (fr) |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2505736B2 (ja) * | 1985-06-18 | 1996-06-12 | キヤノン株式会社 | 半導体装置の製造方法 |
US4668530A (en) * | 1985-07-23 | 1987-05-26 | Massachusetts Institute Of Technology | Low pressure chemical vapor deposition of refractory metal silicides |
US4796562A (en) * | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
US4709655A (en) * | 1985-12-03 | 1987-12-01 | Varian Associates, Inc. | Chemical vapor deposition apparatus |
US4732801A (en) * | 1986-04-30 | 1988-03-22 | International Business Machines Corporation | Graded oxide/nitride via structure and method of fabrication therefor |
US4766006A (en) * | 1986-05-15 | 1988-08-23 | Varian Associates, Inc. | Low pressure chemical vapor deposition of metal silicide |
US4800105A (en) * | 1986-07-22 | 1989-01-24 | Nihon Shinku Gijutsu Kabushiki Kaisha | Method of forming a thin film by chemical vapor deposition |
NL8700820A (nl) * | 1987-04-08 | 1988-11-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
US4908548A (en) * | 1987-05-09 | 1990-03-13 | Futaba Denshi Kogyo Kabushiki Kaisha | Fluorescent display device |
FR2622052B1 (fr) * | 1987-10-19 | 1990-02-16 | Air Liquide | Procede de depot de siliciure de metal refractaire pour la fabrication de circuits integres |
FR2623014B1 (fr) * | 1987-11-09 | 1990-03-23 | France Etat | Procede de depot selectif d'un siliciure de metal refractaire sur des zones de silicium |
US5057375A (en) * | 1988-04-15 | 1991-10-15 | Gordon Roy G | Titanium silicide-coated glass windows |
US5167986A (en) * | 1988-04-15 | 1992-12-01 | Gordon Roy G | Titanium silicide-coated glass windows |
US4957777A (en) * | 1988-07-28 | 1990-09-18 | Massachusetts Institute Of Technology | Very low pressure chemical vapor deposition process for deposition of titanium silicide films |
US5104694A (en) * | 1989-04-21 | 1992-04-14 | Nippon Telephone & Telegraph Corporation | Selective chemical vapor deposition of a metallic film on the silicon surface |
KR930011413B1 (ko) * | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
JPH06101462B2 (ja) * | 1991-04-30 | 1994-12-12 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 過フッ化炭化水素ポリマ膜を基板に接着する方法および 基板 |
KR970009274B1 (ko) * | 1991-11-11 | 1997-06-09 | 미쓰비시덴키 가부시키가이샤 | 반도체장치의 도전층접속구조 및 그 제조방법 |
US5320880A (en) * | 1992-10-20 | 1994-06-14 | Micron Technology, Inc. | Method of providing a silicon film having a roughened outer surface |
US5814599A (en) * | 1995-08-04 | 1998-09-29 | Massachusetts Insitiute Of Technology | Transdermal delivery of encapsulated drugs |
US5426003A (en) * | 1994-02-14 | 1995-06-20 | Westinghouse Electric Corporation | Method of forming a plasma sprayed interconnection layer on an electrode of an electrochemical cell |
US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
WO1995034092A1 (fr) * | 1994-06-03 | 1995-12-14 | Materials Research Corporation | Procede de nitruration de couches minces de titane |
US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
US5975912A (en) * | 1994-06-03 | 1999-11-02 | Materials Research Corporation | Low temperature plasma-enhanced formation of integrated circuits |
US5972790A (en) * | 1995-06-09 | 1999-10-26 | Tokyo Electron Limited | Method for forming salicides |
US5780050A (en) | 1995-07-20 | 1998-07-14 | Theratech, Inc. | Drug delivery compositions for improved stability of steroids |
US5947921A (en) * | 1995-12-18 | 1999-09-07 | Massachusetts Institute Of Technology | Chemical and physical enhancers and ultrasound for transdermal drug delivery |
US6002961A (en) * | 1995-07-25 | 1999-12-14 | Massachusetts Institute Of Technology | Transdermal protein delivery using low-frequency sonophoresis |
US6041253A (en) * | 1995-12-18 | 2000-03-21 | Massachusetts Institute Of Technology | Effect of electric field and ultrasound for transdermal drug delivery |
DK1563788T3 (da) | 1995-08-29 | 2015-05-11 | Nitto Denko Corp | Mikroperforering af human hud til stofindgift og overvågningsformål |
JPH09111460A (ja) * | 1995-10-11 | 1997-04-28 | Anelva Corp | チタン系導電性薄膜の作製方法 |
WO1998000194A2 (fr) | 1996-06-28 | 1998-01-08 | Sontra Medical, L.P. | Amelioration du transport transdermique par ultrason |
US5908659A (en) * | 1997-01-03 | 1999-06-01 | Mosel Vitelic Inc. | Method for reducing the reflectivity of a silicide layer |
US6432479B2 (en) | 1997-12-02 | 2002-08-13 | Applied Materials, Inc. | Method for in-situ, post deposition surface passivation of a chemical vapor deposited film |
EP1045714A1 (fr) | 1998-01-08 | 2000-10-25 | Sontra Medical, L.P. | Transport transdermique par sonophorese ameliore |
US7066884B2 (en) | 1998-01-08 | 2006-06-27 | Sontra Medical, Inc. | System, method, and device for non-invasive body fluid sampling and analysis |
US8287483B2 (en) * | 1998-01-08 | 2012-10-16 | Echo Therapeutics, Inc. | Method and apparatus for enhancement of transdermal transport |
US6046098A (en) * | 1998-02-23 | 2000-04-04 | Micron Technology, Inc. | Process of forming metal silicide interconnects |
US20040171980A1 (en) * | 1998-12-18 | 2004-09-02 | Sontra Medical, Inc. | Method and apparatus for enhancement of transdermal transport |
US6821571B2 (en) | 1999-06-18 | 2004-11-23 | Applied Materials Inc. | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers |
US20030078499A1 (en) | 1999-08-12 | 2003-04-24 | Eppstein Jonathan A. | Microporation of tissue for delivery of bioactive agents |
US6541369B2 (en) | 1999-12-07 | 2003-04-01 | Applied Materials, Inc. | Method and apparatus for reducing fixed charges in a semiconductor device |
US6795727B2 (en) | 2001-10-17 | 2004-09-21 | Pedro Giammarusti | Devices and methods for promoting transcutaneous movement of substances |
US9918665B2 (en) | 2002-03-11 | 2018-03-20 | Nitto Denko Corporation | Transdermal porator and patch system and method for using same |
US7392080B2 (en) | 2002-03-11 | 2008-06-24 | Altea Therapeutics Corporation | Transdermal drug delivery patch system, method of making same and method of using same |
US8116860B2 (en) | 2002-03-11 | 2012-02-14 | Altea Therapeutics Corporation | Transdermal porator and patch system and method for using same |
US8016811B2 (en) | 2003-10-24 | 2011-09-13 | Altea Therapeutics Corporation | Method for transdermal delivery of permeant substances |
US20060094945A1 (en) | 2004-10-28 | 2006-05-04 | Sontra Medical Corporation | System and method for analyte sampling and analysis |
WO2006089082A2 (fr) | 2005-02-17 | 2006-08-24 | Velcera Pharmaceuticals | Administration par voie transmuqueuse de compositions medicamenteuses pour le traitement et la prevention de troubles chez les animaux |
US7432069B2 (en) | 2005-12-05 | 2008-10-07 | Sontra Medical Corporation | Biocompatible chemically crosslinked hydrogels for glucose sensing |
KR101433550B1 (ko) | 2007-03-07 | 2014-08-27 | 에코 테라퓨틱스, 인크. | 경피 피분석물 모니터링 시스템 및 피분석물 검출 방법 |
PT2152358E (pt) | 2007-04-27 | 2011-06-07 | Echo Therapeutics Inc | Dispositivo de permeação da pele para detecção de analito ou distribuição transdérmica de droga |
EP2408369A1 (fr) | 2009-03-02 | 2012-01-25 | Seventh Sense Biosystems, Inc. | Dispositifs et procédés d'analyse d'un fluide extractible |
WO2010101625A2 (fr) | 2009-03-02 | 2010-09-10 | Seventh Sense Biosystems, Inc. | Capteur de mesure d'oxygène |
US9119578B2 (en) | 2011-04-29 | 2015-09-01 | Seventh Sense Biosystems, Inc. | Plasma or serum production and removal of fluids under reduced pressure |
WO2011094573A1 (fr) | 2010-01-28 | 2011-08-04 | Seventh Sense Biosystems, Inc. | Systèmes et procédés de surveillance ou de rétroaction |
WO2011163347A2 (fr) | 2010-06-23 | 2011-12-29 | Seventh Sense Biosystems, Inc. | Dispositifs et procédés d'échantillonnage entraînant peu de douleur |
JP2013538069A (ja) | 2010-07-16 | 2013-10-10 | セブンス センス バイオシステムズ,インコーポレーテッド | 流体移動デバイスのための低圧環境 |
US20130158482A1 (en) | 2010-07-26 | 2013-06-20 | Seventh Sense Biosystems, Inc. | Rapid delivery and/or receiving of fluids |
US20120039809A1 (en) | 2010-08-13 | 2012-02-16 | Seventh Sense Biosystems, Inc. | Systems and techniques for monitoring subjects |
US8808202B2 (en) | 2010-11-09 | 2014-08-19 | Seventh Sense Biosystems, Inc. | Systems and interfaces for blood sampling |
AU2012249692A1 (en) | 2011-04-29 | 2013-11-14 | Seventh Sense Biosystems, Inc. | Delivering and/or receiving fluids |
US20130158468A1 (en) | 2011-12-19 | 2013-06-20 | Seventh Sense Biosystems, Inc. | Delivering and/or receiving material with respect to a subject surface |
WO2012149155A1 (fr) | 2011-04-29 | 2012-11-01 | Seventh Sense Biosystems, Inc. | Systèmes et procédés pour collecter un fluide d'un sujet |
US20140066837A1 (en) | 2012-07-26 | 2014-03-06 | Ronald L. Moy | Skin care compositions and methods |
US10204764B2 (en) * | 2014-10-28 | 2019-02-12 | Applied Materials, Inc. | Methods for forming a metal silicide interconnection nanowire structure |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3540920A (en) * | 1967-08-24 | 1970-11-17 | Texas Instruments Inc | Process of simultaneously vapor depositing silicides of chromium and titanium |
US3658577A (en) * | 1969-10-01 | 1972-04-25 | Gene F Wakefield | Vapor phase deposition of silicide refractory coatings |
US4180596A (en) * | 1977-06-30 | 1979-12-25 | International Business Machines Corporation | Method for providing a metal silicide layer on a substrate |
US4218291A (en) * | 1978-02-28 | 1980-08-19 | Vlsi Technology Research Association | Process for forming metal and metal silicide films |
US4239819A (en) * | 1978-12-11 | 1980-12-16 | Chemetal Corporation | Deposition method and products |
JPS5644765A (en) * | 1979-09-20 | 1981-04-24 | Daijietsuto Kogyo Kk | Covered hard metal tool |
JPS584975A (ja) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | 半導体装置の製造方法 |
US4359490A (en) * | 1981-07-13 | 1982-11-16 | Fairchild Camera & Instrument Corp. | Method for LPCVD co-deposition of metal and silicon to form metal silicide |
JPS57147431A (en) * | 1981-10-06 | 1982-09-11 | Semiconductor Energy Lab Co Ltd | Plasma gas phase method |
DE3211752C2 (de) * | 1982-03-30 | 1985-09-26 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum selektiven Abscheiden von aus Siliziden hochschmelzender Metalle bestehenden Schichtstrukturen auf im wesentlichen aus Silizium bestehenden Substraten und deren Verwendung |
JPS5956574A (ja) * | 1982-09-24 | 1984-04-02 | Fujitsu Ltd | チタン・シリサイド膜の形成方法 |
-
1983
- 1983-10-31 US US06/547,050 patent/US4557943A/en not_active Expired - Fee Related
-
1984
- 1984-08-28 JP JP59179148A patent/JPS6096763A/ja active Granted
- 1984-10-03 NL NL8403011A patent/NL8403011A/nl not_active Application Discontinuation
- 1984-10-16 GB GB08426071A patent/GB2148946B/en not_active Expired
- 1984-10-30 FR FR8416908A patent/FR2554132B1/fr not_active Expired
- 1984-10-31 DE DE19843439853 patent/DE3439853A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
NL8403011A (nl) | 1985-05-17 |
JPS643949B2 (fr) | 1989-01-24 |
GB2148946A (en) | 1985-06-05 |
FR2554132A1 (fr) | 1985-05-03 |
DE3439853A1 (de) | 1985-05-09 |
GB2148946B (en) | 1986-02-26 |
GB8426071D0 (en) | 1984-11-21 |
US4557943A (en) | 1985-12-10 |
JPS6096763A (ja) | 1985-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |