FR2516097B1 - Procede de deposition de silicium par plasma - Google Patents

Procede de deposition de silicium par plasma

Info

Publication number
FR2516097B1
FR2516097B1 FR8214649A FR8214649A FR2516097B1 FR 2516097 B1 FR2516097 B1 FR 2516097B1 FR 8214649 A FR8214649 A FR 8214649A FR 8214649 A FR8214649 A FR 8214649A FR 2516097 B1 FR2516097 B1 FR 2516097B1
Authority
FR
France
Prior art keywords
deposition
plasma
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8214649A
Other languages
English (en)
Other versions
FR2516097A1 (fr
Inventor
Richard S Rosler
George M Engle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Semiconductor Materials America Inc
Original Assignee
Advanced Semiconductor Materials America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Materials America Inc filed Critical Advanced Semiconductor Materials America Inc
Publication of FR2516097A1 publication Critical patent/FR2516097A1/fr
Application granted granted Critical
Publication of FR2516097B1 publication Critical patent/FR2516097B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR8214649A 1981-11-12 1982-08-26 Procede de deposition de silicium par plasma Expired FR2516097B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/320,451 US4401687A (en) 1981-11-12 1981-11-12 Plasma deposition of silicon

Publications (2)

Publication Number Publication Date
FR2516097A1 FR2516097A1 (fr) 1983-05-13
FR2516097B1 true FR2516097B1 (fr) 1987-04-24

Family

ID=23246492

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8214649A Expired FR2516097B1 (fr) 1981-11-12 1982-08-26 Procede de deposition de silicium par plasma

Country Status (6)

Country Link
US (1) US4401687A (fr)
JP (1) JPS5884111A (fr)
DE (1) DE3235503C2 (fr)
FR (1) FR2516097B1 (fr)
GB (1) GB2109414B (fr)
NL (1) NL8204403A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106572A (ja) * 1982-12-06 1984-06-20 信越化学工業株式会社 炭素繊維の表面処理方法
JPS60200523A (ja) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol シリコン薄膜の製造法
US4681653A (en) * 1984-06-01 1987-07-21 Texas Instruments Incorporated Planarized dielectric deposited using plasma enhanced chemical vapor deposition
DE3514094A1 (de) * 1985-04-16 1986-10-23 Schering AG, Berlin und Bergkamen, 1000 Berlin Herstellung metallischer strukturen auf anorganischen nichtleitern
DE3784537T2 (de) * 1986-04-11 1993-09-30 Canon Kk Herstellungsverfahren einer niedergeschlagenen Schicht.
JPS6347920A (ja) * 1986-08-18 1988-02-29 Hitachi Ltd 結晶性半導体装置の製造方法
US4910163A (en) * 1988-06-09 1990-03-20 University Of Connecticut Method for low temperature growth of silicon epitaxial layers using chemical vapor deposition system
KR100210261B1 (ko) * 1997-03-13 1999-07-15 이서봉 발열반응을 이용한 다결정 실리콘의 제조 방법
JP2002525841A (ja) * 1998-09-16 2002-08-13 トーレックス・イクイップメント・コーポレーション 低圧における高速シリコン堆積法
US7115489B2 (en) * 2004-07-16 2006-10-03 Micron Technology, Inc. Methods of growing epitaxial silicon
US8133801B1 (en) 2005-07-27 2012-03-13 Spansion Llc Method for forming a semiconducting layer with improved gap filling properties

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1158930A (fr) * 1956-10-01 1958-06-20 Saint Gobain Procédé de fabrication, à l'état de haute pureté, de métaux et d'autres éléments chimiques à caractère métallique
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
DE2904171A1 (de) * 1979-02-05 1980-08-14 Siemens Ag Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung
FR2453182A1 (fr) * 1979-04-03 1980-10-31 Arkodex Laboratoires Procede de preparation d'un acide ursodesoxycholique de grande purete

Also Published As

Publication number Publication date
GB2109414B (en) 1986-04-09
DE3235503C2 (de) 1986-09-18
JPS621565B2 (fr) 1987-01-14
DE3235503A1 (de) 1983-05-19
US4401687A (en) 1983-08-30
JPS5884111A (ja) 1983-05-20
FR2516097A1 (fr) 1983-05-13
GB2109414A (en) 1983-06-02
NL8204403A (nl) 1983-06-01

Similar Documents

Publication Publication Date Title
RO89714A (fr) Procede de preparation des derives de 5-methylthiopyrimidine
IT1170904B (it) Procedimento per la deposizione di silicio da plasma ad alta pressione
FR2479187B1 (fr) Procede de preparation de n-octadienol
FR2433479B1 (fr) Procede de production de silicium polycristallin
RO81943A (fr) Procede de preparation des derives de pyridoxyne
FR2516097B1 (fr) Procede de deposition de silicium par plasma
FR2497836B1 (fr) Procede de preparation de feuilles en silicium polycristallin fritte
BE867204A (fr) Procede de purification du silicium
PT76595A (fr) Procede de preparation de benzoazacycloalkyl-spiro-imidazolidines
FR2517308B1 (fr) Procede de preparation de derives de 3-alcoxymethylcephalosporines
FR2499983B1 (fr) Procede de preparation de disulfures de thiurame
FR2552435B1 (fr) Procede de fabrication de silanes hydrogenes par redistribution
MA19925A1 (fr) Procede de preparation de 3-aryl-7chloro-3, 4-dihydroacridine-1, 9-(2H-10H)-dione-1-oxines et -1-hydrazones
EP0060625A3 (en) Improved method for plasma deposition of amorphous materials
FR2342098A1 (fr) Procede pour la croissance selective de silicium microcristallin
FR2496660B1 (fr) Procede de preparation de n-acylcarnosine
BE893152A (fr) Procede de preparation de derives de (7e-9z)-alcadienols
BE889546A (fr) Procede de preparation de n-cyclohexylbenzothiazole-2-sulfenamide
PT74559B (fr) Procede de preparation de trifluoromethylphenyl-tetrahydropyri-dines substituees
FR2534905B1 (fr) Procede de preparation de phenylcetones
BE890748A (fr) Procede de preparation de derives de 11-dedecen-1-yle
FR2491493B1 (fr) Procede de preparation de l-isoleucine par fermentation
FR2528825B1 (fr) Procede de preparation de meta-chlorobenzotrifluorure
FR2531714B1 (fr) Procede de purification de s-adenosyl-l-methionine
RO81430A (fr) Procede de preparation des azolul siliglycolethers

Legal Events

Date Code Title Description
ST Notification of lapse