DE3235503C2 - - Google Patents

Info

Publication number
DE3235503C2
DE3235503C2 DE19823235503 DE3235503A DE3235503C2 DE 3235503 C2 DE3235503 C2 DE 3235503C2 DE 19823235503 DE19823235503 DE 19823235503 DE 3235503 A DE3235503 A DE 3235503A DE 3235503 C2 DE3235503 C2 DE 3235503C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19823235503
Other versions
DE3235503A1 (de
Inventor
Richard S. Paradise Valley Ariz. Us Rosler
Georg M. Scottsdale Ariz. Us Engle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Semiconductor Materials America
Original Assignee
Advanced Semiconductor Materials America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US06/320,451 priority Critical patent/US4401687A/en
Application filed by Advanced Semiconductor Materials America filed Critical Advanced Semiconductor Materials America
Publication of DE3235503A1 publication Critical patent/DE3235503A1/de
Application granted granted Critical
Publication of DE3235503C2 publication Critical patent/DE3235503C2/de
Application status is Expired legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
DE19823235503 1981-11-12 1982-09-24 Expired DE3235503C2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US06/320,451 US4401687A (en) 1981-11-12 1981-11-12 Plasma deposition of silicon

Publications (2)

Publication Number Publication Date
DE3235503A1 DE3235503A1 (de) 1983-05-19
DE3235503C2 true DE3235503C2 (de) 1986-09-18

Family

ID=23246492

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823235503 Expired DE3235503C2 (de) 1981-11-12 1982-09-24

Country Status (6)

Country Link
US (1) US4401687A (de)
JP (1) JPS621565B2 (de)
DE (1) DE3235503C2 (de)
FR (1) FR2516097B1 (de)
GB (1) GB2109414B (de)
NL (1) NL8204403A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106572A (en) * 1982-12-06 1984-06-20 Shinetsu Chem Ind Co Surface treatment of carbon fiber
JPS60200523A (en) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol Manufacture of silicon thin film
US4681653A (en) * 1984-06-01 1987-07-21 Texas Instruments Incorporated Planarized dielectric deposited using plasma enhanced chemical vapor deposition
DE3514094C2 (de) * 1985-04-16 1991-10-17 Schering Ag Berlin Und Bergkamen, 1000 Berlin, De
EP0241317B1 (de) * 1986-04-11 1993-03-10 Canon Kabushiki Kaisha Herstellungsverfahren einer niedergeschlagenen Schicht
JPS6347920A (en) * 1986-08-18 1988-02-29 Hitachi Ltd Manufacture of crystalline semiconductor device
US4910163A (en) * 1988-06-09 1990-03-20 University Of Connecticut Method for low temperature growth of silicon epitaxial layers using chemical vapor deposition system
KR100210261B1 (ko) 1997-03-13 1999-07-15 이서봉 발열반응을 이용한 다결정 실리콘의 제조 방법
JP2002525841A (ja) * 1998-09-16 2002-08-13 トーレックス・イクイップメント・コーポレーション 低圧における高速シリコン堆積法
US7115489B2 (en) * 2004-07-16 2006-10-03 Micron Technology, Inc. Methods of growing epitaxial silicon
US8133801B1 (en) 2005-07-27 2012-03-13 Spansion Llc Method for forming a semiconducting layer with improved gap filling properties

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1072815B (de) * 1956-10-01
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
DE2904171C2 (de) * 1979-02-05 1989-04-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
FR2453182A1 (fr) * 1979-04-03 1980-10-31 Arkodex Laboratoires Procede de preparation d'un acide ursodesoxycholique de grande purete

Also Published As

Publication number Publication date
FR2516097A1 (fr) 1983-05-13
DE3235503A1 (de) 1983-05-19
GB2109414B (en) 1986-04-09
JPS621565B2 (de) 1987-01-14
GB2109414A (en) 1983-06-02
US4401687A (en) 1983-08-30
JPS5884111A (en) 1983-05-20
NL8204403A (nl) 1983-06-01
FR2516097B1 (fr) 1987-04-24

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8128 New person/name/address of the agent

Representative=s name: HIEKE, K., DIPL.-ING., PAT.-ANW., 8013 HAAR

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee