DE69737563D1 - Verfahren zur chemischen gasphasenabscheidung - Google Patents

Verfahren zur chemischen gasphasenabscheidung

Info

Publication number
DE69737563D1
DE69737563D1 DE69737563T DE69737563T DE69737563D1 DE 69737563 D1 DE69737563 D1 DE 69737563D1 DE 69737563 T DE69737563 T DE 69737563T DE 69737563 T DE69737563 T DE 69737563T DE 69737563 D1 DE69737563 D1 DE 69737563D1
Authority
DE
Germany
Prior art keywords
gas phase
phase deposition
chemical gas
chemical
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69737563T
Other languages
English (en)
Other versions
DE69737563T2 (de
Inventor
Toshiaki Fujii
Motoaki Adachi
Kikuo Okuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of DE69737563D1 publication Critical patent/DE69737563D1/de
Publication of DE69737563T2 publication Critical patent/DE69737563T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
DE69737563T 1996-02-23 1997-02-21 Verfahren zur chemischen gasphasenabscheidung Expired - Fee Related DE69737563T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP6028096 1996-02-23
JP6028096 1996-02-23
JP15739096 1996-05-30
JP15739096 1996-05-30
PCT/JP1997/000481 WO1997031391A1 (fr) 1996-02-23 1997-02-21 Dispositif et procede de depot chimique en phase vapeur

Publications (2)

Publication Number Publication Date
DE69737563D1 true DE69737563D1 (de) 2007-05-16
DE69737563T2 DE69737563T2 (de) 2007-12-27

Family

ID=26401348

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69737563T Expired - Fee Related DE69737563T2 (de) 1996-02-23 1997-02-21 Verfahren zur chemischen gasphasenabscheidung

Country Status (6)

Country Link
US (1) US6461692B2 (de)
EP (1) EP0957511B1 (de)
JP (1) JP3789485B2 (de)
KR (1) KR100466293B1 (de)
DE (1) DE69737563T2 (de)
WO (1) WO1997031391A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW416992B (en) * 1996-09-09 2001-01-01 Ebara Corp Vaporizer for vaporizing liquid feed material
US6596343B1 (en) * 2000-04-21 2003-07-22 Applied Materials, Inc. Method and apparatus for processing semiconductor substrates with hydroxyl radicals
JP4050556B2 (ja) * 2002-05-30 2008-02-20 沖電気工業株式会社 半導体装置の製造方法
KR20040035108A (ko) * 2002-10-18 2004-04-29 학교법인 포항공과대학교 기능성 박막 형성 방법
FI116382B (fi) * 2003-04-22 2005-11-15 Liekki Oy Menetelmä hiukkasten varaamiseksi materiaalin valmistusprosessissa sekä hiukkasten varauslaite
KR100745346B1 (ko) * 2005-09-20 2007-08-02 삼성에스디아이 주식회사 박막 증착장치 및 이를 이용한 박막 증착방법
US8635971B2 (en) * 2006-03-31 2014-01-28 Lam Research Corporation Tunable uniformity in a plasma processing system
JP5052071B2 (ja) * 2006-08-25 2012-10-17 株式会社明電舎 酸化膜形成方法とその装置
US7361207B1 (en) * 2007-02-28 2008-04-22 Corning Incorporated System and method for electrostatically depositing aerosol particles
US7393385B1 (en) * 2007-02-28 2008-07-01 Corning Incorporated Apparatus and method for electrostatically depositing aerosol particles
PL2072587T3 (pl) * 2007-12-20 2020-11-02 Borealis Technology Oy Powlekane rury o ulepszonych właściwościach mechanicznych w wysokich temperaturach i sposób ich wytwarzania
JP5078656B2 (ja) * 2008-02-18 2012-11-21 三井造船株式会社 原子層成長装置
US11348784B2 (en) * 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing
KR20210094694A (ko) * 2020-01-21 2021-07-30 삼성전자주식회사 기판 처리 장치, 물질막 증착 장치, 및 상압 화학 기상 증착 장치

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Publication number Priority date Publication date Assignee Title
JPS57167631A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing method
US4582720A (en) * 1982-09-20 1986-04-15 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for forming non-single-crystal layer
JPS61178050A (ja) 1985-02-04 1986-08-09 Ebara Corp 紫外線照射による空気清浄方法及びその装置
JPH0229386B2 (ja) 1985-03-25 1990-06-29 Pii Esu Kankyo Giken Kk Kukiseijoki
US4670064A (en) * 1985-04-10 1987-06-02 Eaton Corporation Generating high purity ions by non-thermal excimer laser processing
DE3526830C1 (de) * 1985-07-26 1986-07-17 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren und Einrichtung zum Niederschlagen eines Materials durch Zersetzung einer dampfförmigen chemischen Verbindung
JP2635021B2 (ja) * 1985-09-26 1997-07-30 宣夫 御子柴 堆積膜形成法及びこれに用いる装置
US4664769A (en) * 1985-10-28 1987-05-12 International Business Machines Corporation Photoelectric enhanced plasma glow discharge system and method including radiation means
JPS6347141A (ja) 1986-08-14 1988-02-27 鐘淵化学工業株式会社 ポリイミド前駆体を部分的に閉環させた薄膜を含む複合物品
NO881723L (no) * 1987-04-22 1988-10-24 Idemitsu Petrochemical Co Fremgangsmaate og innretning for fremstilling av diamanter.
JPH02115379A (ja) * 1988-10-25 1990-04-27 Nec Corp 薄膜形成装置
US5154733A (en) 1990-03-06 1992-10-13 Ebara Research Co., Ltd. Photoelectron emitting member and method of electrically charging fine particles with photoelectrons
JPH04718A (ja) 1990-04-18 1992-01-06 Toshiba Corp 表面処理装置
JPH08211B2 (ja) 1990-11-02 1996-01-10 株式会社荏原総合研究所 密閉空間の清浄方法及び装置
JP2840699B2 (ja) * 1990-12-12 1998-12-24 株式会社 半導体エネルギー研究所 被膜形成装置及び被膜形成方法
US5660693A (en) * 1991-01-18 1997-08-26 Applied Vision Limited Ion vapour deposition apparatus and method
JPH04352320A (ja) * 1991-05-29 1992-12-07 Toshiba Corp 気相成長装置
JPH0666307A (ja) 1991-10-21 1994-03-08 Mineichi Iwamoto ナット状部材及びそれを応用した天井骨組み材支持具
US5541003A (en) * 1991-10-31 1996-07-30 Tdk Corporation Articles having diamond-like protective thin film
KR960000190B1 (ko) 1992-11-09 1996-01-03 엘지전자주식회사 반도체 제조방법 및 그 장치
US5922105A (en) 1992-12-02 1999-07-13 Ebara Research Co., Ltd. Method and apparatus for the preparation of clean gases
JP3246189B2 (ja) * 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
JP3056050B2 (ja) 1995-03-06 2000-06-26 日本電気株式会社 薄膜堆積方法

Also Published As

Publication number Publication date
DE69737563T2 (de) 2007-12-27
JP3789485B2 (ja) 2006-06-21
US20010032781A1 (en) 2001-10-25
EP0957511A1 (de) 1999-11-17
KR19990087056A (ko) 1999-12-15
KR100466293B1 (ko) 2005-05-17
EP0957511B1 (de) 2007-04-04
EP0957511A4 (de) 2002-06-05
US6461692B2 (en) 2002-10-08
WO1997031391A1 (fr) 1997-08-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee