DE69904639D1 - Verfahren zur genauen ziehung eines kristalles - Google Patents

Verfahren zur genauen ziehung eines kristalles

Info

Publication number
DE69904639D1
DE69904639D1 DE69904639T DE69904639T DE69904639D1 DE 69904639 D1 DE69904639 D1 DE 69904639D1 DE 69904639 T DE69904639 T DE 69904639T DE 69904639 T DE69904639 T DE 69904639T DE 69904639 D1 DE69904639 D1 DE 69904639D1
Authority
DE
Germany
Prior art keywords
crystal
exactly
exactly drawing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69904639T
Other languages
English (en)
Other versions
DE69904639T2 (de
Inventor
R Wyand
H Fuerhoff
K Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE69904639D1 publication Critical patent/DE69904639D1/de
Application granted granted Critical
Publication of DE69904639T2 publication Critical patent/DE69904639T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69904639T 1998-10-14 1999-10-12 Verfahren zur genauen ziehung eines kristalles Expired - Fee Related DE69904639T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10428998P 1998-10-14 1998-10-14
US37289799A 1999-08-12 1999-08-12
PCT/US1999/023735 WO2000022201A1 (en) 1998-10-14 1999-10-12 Method and apparatus for accurately pulling a crystal

Publications (2)

Publication Number Publication Date
DE69904639D1 true DE69904639D1 (de) 2003-01-30
DE69904639T2 DE69904639T2 (de) 2003-11-06

Family

ID=26801370

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69904639T Expired - Fee Related DE69904639T2 (de) 1998-10-14 1999-10-12 Verfahren zur genauen ziehung eines kristalles

Country Status (7)

Country Link
EP (1) EP1125009B1 (de)
JP (1) JP2002539060A (de)
KR (1) KR20010080084A (de)
CN (1) CN1329682A (de)
DE (1) DE69904639T2 (de)
TW (1) TW446766B (de)
WO (1) WO2000022201A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100987342B1 (ko) * 2003-05-12 2010-10-12 주식회사 포스코 슬래그 유입 차단장치
US20060005761A1 (en) * 2004-06-07 2006-01-12 Memc Electronic Materials, Inc. Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length
US7223304B2 (en) 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
DE102005040229B4 (de) * 2005-08-25 2011-12-22 Siltronic Ag Unterstützungsvorrichtung zur Unterstützung eines wachsenden Einkristalls aus Halbleitermaterial und Verfahren zur Herstellung eines Einkristalls
DE102007005346B4 (de) * 2007-02-02 2015-09-17 Siltronic Ag Halbleiterscheiben aus Silicium und Verfahren zu deren Herstellung
KR100884921B1 (ko) * 2007-10-30 2009-02-20 현빈테크 주식회사 단결정 실리콘 잉곳 제조장치의 단결정 시드 견인용 와이어측정장치
US8221545B2 (en) 2008-07-31 2012-07-17 Sumco Phoenix Corporation Procedure for in-situ determination of thermal gradients at the crystal growth front
US8012255B2 (en) 2008-07-31 2011-09-06 Sumco Phoenix Corporation Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
CN101597796B (zh) * 2009-06-30 2012-10-03 上海硅酸盐研究所中试基地 硼酸钆锂晶体的晶体生长方法
US8496765B2 (en) 2009-09-10 2013-07-30 Sumco Phoenix Corporation Method for correcting speed deviations between actual and nominal pull speed during crystal growth
JP2012166979A (ja) * 2011-02-14 2012-09-06 Sumco Corp 多結晶シリコンの電磁鋳造方法および電磁鋳造装置
KR101304717B1 (ko) * 2011-03-18 2013-09-05 주식회사 엘지실트론 잉곳 성장 제어시스템 및 이를 포함하는 잉곳 성장장치
JP6428372B2 (ja) * 2015-02-26 2018-11-28 株式会社Sumco 原料融液液面と種結晶下端との間隔測定方法、種結晶の予熱方法、および単結晶の製造方法
JP6551135B2 (ja) * 2015-10-14 2019-07-31 株式会社Sumco 単結晶製造装置および製造方法
DE102016219605A1 (de) * 2016-10-10 2018-04-12 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial aus einer Schmelze, die in einem Tiegel enthalten ist
KR102011210B1 (ko) 2018-01-18 2019-08-14 에스케이실트론 주식회사 단결정 잉곳 성장용 인상제어장치 및 이에 적용된 인상제어방법
JP7342847B2 (ja) * 2020-11-27 2023-09-12 信越半導体株式会社 シリコン単結晶の製造方法
CN115369480B (zh) * 2022-09-23 2023-09-05 宁夏中欣晶圆半导体科技有限公司 晶棒拉晶方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3621213A (en) * 1969-11-26 1971-11-16 Ibm Programmed digital-computer-controlled system for automatic growth of semiconductor crystals
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
US4663128A (en) * 1985-03-06 1987-05-05 Ferrofluidics Corporation Pulling head for a crystal growing furnace
DE69017642T2 (de) * 1989-12-22 1995-07-06 Shinetsu Handotai Kk Vorrichtung zur Herstellung von Einkristallen nach dem Czochralski-Verfahren.
JPH06102590B2 (ja) * 1990-02-28 1994-12-14 信越半導体株式会社 Ｃｚ法による単結晶ネック部育成自動制御方法
JP2979462B2 (ja) * 1995-09-29 1999-11-15 住友金属工業株式会社 単結晶引き上げ方法

Also Published As

Publication number Publication date
WO2000022201A9 (en) 2000-08-24
TW446766B (en) 2001-07-21
JP2002539060A (ja) 2002-11-19
EP1125009A1 (de) 2001-08-22
WO2000022201A1 (en) 2000-04-20
EP1125009B1 (de) 2002-12-18
CN1329682A (zh) 2002-01-02
DE69904639T2 (de) 2003-11-06
KR20010080084A (ko) 2001-08-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee