DE69806873T2 - Elektronenstrahlresist - Google Patents

Elektronenstrahlresist

Info

Publication number
DE69806873T2
DE69806873T2 DE1998606873 DE69806873T DE69806873T2 DE 69806873 T2 DE69806873 T2 DE 69806873T2 DE 1998606873 DE1998606873 DE 1998606873 DE 69806873 T DE69806873 T DE 69806873T DE 69806873 T2 DE69806873 T2 DE 69806873T2
Authority
DE
Germany
Prior art keywords
electron beam
beam resist
resist
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1998606873
Other languages
English (en)
Other versions
DE69806873D1 (de
Inventor
Toshihiko Kanayama
Tetsuya Tada
Richard Edward Palmer
Alexander Phillip Graham Robinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Birmingham
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
University of Birmingham
Agency of Industrial Science and Technology
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Birmingham, Agency of Industrial Science and Technology, National Institute of Advanced Industrial Science and Technology AIST filed Critical University of Birmingham
Publication of DE69806873D1 publication Critical patent/DE69806873D1/de
Application granted granted Critical
Publication of DE69806873T2 publication Critical patent/DE69806873T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
DE1998606873 1997-09-22 1998-09-17 Elektronenstrahlresist Expired - Lifetime DE69806873T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25712297A JP3032833B2 (ja) 1997-09-22 1997-09-22 電子線レジスト

Publications (2)

Publication Number Publication Date
DE69806873D1 DE69806873D1 (de) 2002-09-05
DE69806873T2 true DE69806873T2 (de) 2003-03-20

Family

ID=17302043

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1998606873 Expired - Lifetime DE69806873T2 (de) 1997-09-22 1998-09-17 Elektronenstrahlresist

Country Status (4)

Country Link
US (1) US6117617A (de)
EP (1) EP0903637B1 (de)
JP (1) JP3032833B2 (de)
DE (1) DE69806873T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9827798D0 (en) * 1998-12-17 1999-02-10 Agency Ind Science Techn Electron beam resist
CA2312140A1 (en) * 1999-06-25 2000-12-25 Matthias Ramm Charge separation type heterojunction structure and manufacturing method therefor
US6793967B1 (en) * 1999-06-25 2004-09-21 Sony Corporation Carbonaceous complex structure and manufacturing method therefor
US7250147B2 (en) * 2001-01-29 2007-07-31 Tour James M Process for derivatizing carbon nanotubes with diazonium species
KR20030002739A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 반도체 소자의 포토레지스트 제조 방법 및 이를 이용한포토레지스트 패턴 형성 방법
KR100947702B1 (ko) 2003-02-26 2010-03-16 삼성전자주식회사 경화성 작용기로 표면수식된 탄소나노튜브를 이용한패턴박막 형성방법 및 고분자 복합체의 제조방법
US20080093224A1 (en) * 2003-07-29 2008-04-24 Tour James M Process for derivatizing carbon nanotubes with diazonium species and compositions thereof
KR100825465B1 (ko) 2004-02-19 2008-04-28 도쿄 오카 고교 가부시키가이샤 포토레지스트 조성물 및 레지스트 패턴 형성방법
WO2005081061A1 (ja) * 2004-02-19 2005-09-01 Tokyo Ohka Kogyo Co., Ltd. フォトレジスト組成物およびレジストパターン形成方法
US7563722B2 (en) * 2004-03-05 2009-07-21 Applied Nanotech Holdings, Inc. Method of making a textured surface
GB0420700D0 (en) * 2004-09-17 2004-10-20 Univ Birmingham Novel resist material
GB0420702D0 (en) 2004-09-17 2004-10-20 Univ Birmingham Use of methanofullerene derivatives as resist materials and method for forming a resist layer
TWI495632B (zh) 2004-12-24 2015-08-11 Mitsubishi Gas Chemical Co 光阻用化合物
JP2007145635A (ja) * 2005-11-25 2007-06-14 Joetsu Univ Of Education フラーレン誘導体
TWI432408B (zh) 2007-01-09 2014-04-01 Jsr Corp 化合物及敏輻射線性組成物
KR100907753B1 (ko) 2007-06-12 2009-07-14 한국화학연구원 불소기로 치환된 메타노플러렌 화합물 및 이를 이용한유기전자소자
WO2009022540A1 (ja) 2007-08-13 2009-02-19 Jsr Corporation 化合物及び感放射線性組成物
WO2009089158A2 (en) * 2008-01-04 2009-07-16 University Of Florida Research Foundation, Inc. Functionalized fullerenes for nanolithography applications
GB0920231D0 (en) * 2009-11-18 2010-01-06 Univ Birmingham Photoresist composition
KR101783729B1 (ko) 2010-09-16 2017-10-10 후지필름 가부시키가이샤 패턴 형성 방법, 화학증폭형 레지스트 조성물, 및 레지스트 막
WO2013117908A1 (en) * 2012-02-10 2013-08-15 The University Of Birmingham Spin on hard-mask material
US9256126B2 (en) * 2012-11-14 2016-02-09 Irresistible Materials Ltd Methanofullerenes
US9220432B2 (en) * 2013-03-02 2015-12-29 C. R. Bard, Inc. Method and system of utilizing ECG signal for central venous catheter tip positioning
WO2014190070A1 (en) * 2013-05-22 2014-11-27 Robinson Alex Philip Graaham Fullerenes

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2814165B2 (ja) * 1992-06-30 1998-10-22 日本石油株式会社 感光材料
US5561026A (en) * 1992-06-30 1996-10-01 Nippon Oil Co., Ltd. Photosensitive materials comprising fullerene
JP2814174B2 (ja) * 1992-11-30 1998-10-22 日本石油株式会社 感光材料組成物
JPH07134413A (ja) * 1993-03-23 1995-05-23 At & T Corp フラーレン含有レジスト材料を用いたデバイス作製プロセス
US5453413A (en) * 1993-06-08 1995-09-26 Nanotechnologies, Inc. Phototransformation of fullerenes
JPH0733751A (ja) * 1993-07-26 1995-02-03 Nippon Oil Co Ltd フラーレン誘導体および感光材料
JP2860399B2 (ja) * 1996-01-31 1999-02-24 工業技術院長 パターン形成方法
KR100234143B1 (ko) * 1996-06-07 1999-12-15 미야즈 쥰이치로 레지스트 물질 및 그 제조 방법
JP3563206B2 (ja) * 1996-06-13 2004-09-08 株式会社石川製作所 新規なフラーレン化合物及びその製造方法と使用方法
JP2878654B2 (ja) * 1996-09-13 1999-04-05 理化学研究所 感光性樹脂組成物

Also Published As

Publication number Publication date
EP0903637A3 (de) 1999-07-14
JPH11143074A (ja) 1999-05-28
DE69806873D1 (de) 2002-09-05
JP3032833B2 (ja) 2000-04-17
US6117617A (en) 2000-09-12
EP0903637B1 (de) 2002-07-31
EP0903637A2 (de) 1999-03-24

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Legal Events

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