DE69904223T2 - Wasserlösliche positiv arbeitende photoresistzusammensetzung - Google Patents

Wasserlösliche positiv arbeitende photoresistzusammensetzung

Info

Publication number
DE69904223T2
DE69904223T2 DE69904223T DE69904223T DE69904223T2 DE 69904223 T2 DE69904223 T2 DE 69904223T2 DE 69904223 T DE69904223 T DE 69904223T DE 69904223 T DE69904223 T DE 69904223T DE 69904223 T2 DE69904223 T2 DE 69904223T2
Authority
DE
Germany
Prior art keywords
water
photoresist composition
positive working
working photoresist
soluble positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69904223T
Other languages
English (en)
Other versions
DE69904223D1 (de
Inventor
Iain Mcculloch
J East
Ming Kang
Richard Keosian
Hyun-Nam Yoon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Application granted granted Critical
Publication of DE69904223D1 publication Critical patent/DE69904223D1/de
Publication of DE69904223T2 publication Critical patent/DE69904223T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE69904223T 1998-07-23 1999-07-03 Wasserlösliche positiv arbeitende photoresistzusammensetzung Expired - Fee Related DE69904223T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12128598A 1998-07-23 1998-07-23
PCT/EP1999/004636 WO2000005282A1 (en) 1998-07-23 1999-07-03 Water soluble positive-working photoresist composition

Publications (2)

Publication Number Publication Date
DE69904223D1 DE69904223D1 (de) 2003-01-09
DE69904223T2 true DE69904223T2 (de) 2003-08-28

Family

ID=22395699

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69904223T Expired - Fee Related DE69904223T2 (de) 1998-07-23 1999-07-03 Wasserlösliche positiv arbeitende photoresistzusammensetzung

Country Status (7)

Country Link
EP (1) EP1117714B1 (de)
JP (1) JP2002521706A (de)
KR (1) KR20010053581A (de)
CN (1) CN1310731A (de)
DE (1) DE69904223T2 (de)
MY (1) MY118957A (de)
WO (1) WO2000005282A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1240552B1 (de) * 1999-08-13 2012-09-19 Intellectual Ventures Holding 40 LLC Wässrig entwickelbare fotoresistzusammensetzungen
PL1928819T3 (pl) * 2005-09-01 2012-01-31 Council Scient Ind Res Jednoetapowy sposób wytwarzania estrów diazonaftochinonosulfonylowych
KR101014565B1 (ko) * 2009-02-26 2011-02-16 한국타피컴퓨터(주) 민원서류 발급기 편철장치의 민원서류 배출구조
NZ602750A (en) * 2010-05-24 2014-12-24 Xyleco Inc Methods for modifying the solubility of a chemical in a solvent
CN103365092B (zh) * 2012-03-31 2016-01-06 中芯国际集成电路制造(上海)有限公司 双重光刻胶及其处理方法
KR101444111B1 (ko) * 2012-11-19 2014-09-26 금호석유화학 주식회사 신규 아크릴계 단량체, 중합체 및 이를 포함하는 레지스트 조성물
JP2016105442A (ja) * 2014-12-01 2016-06-09 株式会社ディスコ ウエーハの加工方法
TWI777569B (zh) * 2020-05-22 2022-09-11 台灣積體電路製造股份有限公司 底層組成物與半導體裝置的製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4106356A1 (de) * 1991-02-28 1992-09-03 Hoechst Ag Strahlungsempfindliche polymere mit naphthochinon-2-diazid-4-sulfonyl-gruppen und deren verwendung in einem positiv arbeitenden aufzeichnungsmaterial
KR0164981B1 (ko) * 1995-11-28 1999-03-20 김흥기 아세탈기를 함유하는 알콕시-스틸렌 중합체와 그의 제조방법 및 알콕시-스틸렌 중합체를 주요 구성성분으로 하는 화학증폭형 포토레지스트 재료

Also Published As

Publication number Publication date
EP1117714A1 (de) 2001-07-25
CN1310731A (zh) 2001-08-29
JP2002521706A (ja) 2002-07-16
WO2000005282A1 (en) 2000-02-03
DE69904223D1 (de) 2003-01-09
MY118957A (en) 2005-02-28
EP1117714B1 (de) 2002-11-27
KR20010053581A (ko) 2001-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU

8339 Ceased/non-payment of the annual fee