DE69800164T2 - Positiv-arbeitende photoempfindliche Zusammensetzung - Google Patents
Positiv-arbeitende photoempfindliche ZusammensetzungInfo
- Publication number
- DE69800164T2 DE69800164T2 DE69800164T DE69800164T DE69800164T2 DE 69800164 T2 DE69800164 T2 DE 69800164T2 DE 69800164 T DE69800164 T DE 69800164T DE 69800164 T DE69800164 T DE 69800164T DE 69800164 T2 DE69800164 T2 DE 69800164T2
- Authority
- DE
- Germany
- Prior art keywords
- photosensitive composition
- positive working
- working photosensitive
- positive
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
- Y10S430/123—Sulfur in heterocyclic ring
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP08107597A JP3773139B2 (ja) | 1997-03-31 | 1997-03-31 | ポジ型感光性組成物 |
JP08066697A JP3778391B2 (ja) | 1997-03-31 | 1997-03-31 | ポジ型感光性組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69800164D1 DE69800164D1 (de) | 2000-07-06 |
DE69800164T2 true DE69800164T2 (de) | 2000-10-05 |
Family
ID=26421642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69800164T Expired - Lifetime DE69800164T2 (de) | 1997-03-31 | 1998-03-30 | Positiv-arbeitende photoempfindliche Zusammensetzung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6037098A (de) |
EP (1) | EP0869393B1 (de) |
KR (1) | KR100496174B1 (de) |
DE (1) | DE69800164T2 (de) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0874281B1 (de) * | 1997-04-23 | 2002-12-04 | Infineon Technologies AG | Chemisch verstärkter Resist |
JP2001255647A (ja) * | 2000-03-13 | 2001-09-21 | Daikin Ind Ltd | エネルギー線照射によりカチオンまたは酸を発生するフルオロアルキルオニウム塩型のカチオンまたは酸発生剤 |
US20020058206A1 (en) * | 2000-09-06 | 2002-05-16 | Fuji Photo Film Co., Ltd. | Positive resist composition |
TW594383B (en) * | 2001-02-21 | 2004-06-21 | Fuji Photo Film Co Ltd | Positive resist composition for electron beam |
WO2003016910A1 (en) | 2001-08-20 | 2003-02-27 | Biosite, Inc. | Diagnostic markers of stroke and cerebral injury and methods of use thereof |
KR20020090584A (ko) * | 2001-05-28 | 2002-12-05 | 주식회사 동진쎄미켐 | 유기 반사 방지막용 고분자 수지, 및 이를 이용하는KrF 포토레지스트용 유기 반사 방지막 조성물 |
JP4480393B2 (ja) | 2001-07-19 | 2010-06-16 | ランベルティ ソシエタ ペル アチオニ | スルホニウム塩、これらの製造方法および放射線硬化性系のための光開始剤としてのこれらの使用 |
JP4025074B2 (ja) * | 2001-09-19 | 2007-12-19 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
US7316891B2 (en) * | 2002-03-06 | 2008-01-08 | Agfa Graphics Nv | Method of developing a heat-sensitive lithographic printing plate precursor with a gum solution |
EP1504306A1 (de) * | 2002-05-16 | 2005-02-09 | Rensselaer Polytechnic Institute | Fotopolymerisierbare zusammensetzungen, die thianthreniumsalze als kationische fotoinitiatoren enthalten |
GB2396153A (en) * | 2002-12-12 | 2004-06-16 | Sun Chemical Bv | Sulfonium salts useful as cationic photoinitiators in energy-curable compositions and processes of preparing cured polymeric compositions |
US20050158654A1 (en) * | 2004-01-21 | 2005-07-21 | Wang Yueh | Reducing outgassing of reactive material upon exposure of photolithography resists |
KR100900173B1 (ko) * | 2004-02-20 | 2009-06-02 | 도오꾜오까고오교 가부시끼가이샤 | 패턴 형성 재료용 기재, 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
WO2005111727A1 (en) | 2004-05-19 | 2005-11-24 | Agfa-Gevaert | Method of making a photopolymer printing plate |
EP1614541A3 (de) | 2004-07-08 | 2006-06-07 | Agfa-Gevaert | Verfahren zur Herstellung einer lithographischen Druckplatte |
JP3946715B2 (ja) * | 2004-07-28 | 2007-07-18 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4468119B2 (ja) * | 2004-09-08 | 2010-05-26 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
JP4474256B2 (ja) | 2004-09-30 | 2010-06-02 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
JP4837323B2 (ja) * | 2004-10-29 | 2011-12-14 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法および化合物 |
US7981588B2 (en) * | 2005-02-02 | 2011-07-19 | Tokyo Ohka Kogyo Co., Ltd. | Negative resist composition and method of forming resist pattern |
JP4397834B2 (ja) * | 2005-02-25 | 2010-01-13 | 東京応化工業株式会社 | ポジ型レジスト組成物、レジストパターン形成方法および化合物 |
JP5138157B2 (ja) * | 2005-05-17 | 2013-02-06 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4813103B2 (ja) | 2005-06-17 | 2011-11-09 | 東京応化工業株式会社 | 化合物、ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4732038B2 (ja) | 2005-07-05 | 2011-07-27 | 東京応化工業株式会社 | 化合物、ポジ型レジスト組成物およびレジストパターン形成方法 |
ATE422253T1 (de) | 2005-11-18 | 2009-02-15 | Agfa Graphics Nv | Verfahren zur herstellung einer lithografiedruckform |
ES2322908T3 (es) | 2005-11-18 | 2009-07-01 | Agfa Graphics N.V. | Metodo de fabricacion de una plancha de impresion litografica. |
PL1788442T3 (pl) | 2005-11-18 | 2011-01-31 | Agfa Graphics Nv | Sposób wytwarzania litograficznej formy drukowej |
ES2358120T3 (es) | 2005-11-18 | 2011-05-05 | Agfa Graphics N.V. | Método de elaboración de una plancha de impresión litográfica. |
ES2320561T3 (es) | 2005-11-18 | 2009-05-25 | Agfa Graphics N.V. | Metodo para fabricar una plancha de impresion litografica. |
EP2772805A1 (de) | 2005-11-18 | 2014-09-03 | Agfa Graphics Nv | Verfahren zur Herstellung einer Flachdruckplatte |
DE602005013399D1 (de) | 2005-11-18 | 2009-04-30 | Agfa Graphics Nv | Verfahren zur Herstellung einer lithographischen Druckplatte |
DE602005013536D1 (de) | 2005-11-18 | 2009-05-07 | Agfa Graphics Nv | Verfahren zur Herstellung einer Lithografiedruckform |
EP1788449A1 (de) | 2005-11-21 | 2007-05-23 | Agfa Graphics N.V. | Verfahren zur Herstellung einer Lithografiedruckform |
ATE430330T1 (de) | 2005-11-21 | 2009-05-15 | Agfa Graphics Nv | Verfahren zur herstellung einer lithografiedruckform |
EP1788435B1 (de) | 2005-11-21 | 2013-05-01 | Agfa Graphics N.V. | Verfahren zur Herstellung einer Lithografiedruckform |
DE602006009919D1 (de) * | 2006-08-03 | 2009-12-03 | Agfa Graphics Nv | Flachdruckplattenträger |
US7718344B2 (en) * | 2006-09-29 | 2010-05-18 | Fujifilm Corporation | Resist composition and pattern forming method using the same |
EP1972460B1 (de) * | 2007-03-19 | 2009-09-02 | Agfa Graphics N.V. | Verfahren zur Herstellung eines lithographischen Druckplattenträgers |
ES2344668T3 (es) | 2007-11-30 | 2010-09-02 | Agfa Graphics N.V. | Metodo para tratar una plancha de impresion litografica. |
ES2430562T3 (es) | 2008-03-04 | 2013-11-21 | Agfa Graphics N.V. | Método para la fabricación de un soporte de una plancha de impresión litográfica |
ES2365885T3 (es) * | 2008-03-31 | 2011-10-13 | Agfa Graphics N.V. | Un método para tratar una plancha de impresión litográfica. |
JP5544098B2 (ja) | 2008-09-26 | 2014-07-09 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、及び該感光性組成物を用いたパターン形成方法 |
US10254646B2 (en) | 2012-12-19 | 2019-04-09 | Ibf Industria Brasileira De Filmes S/A | Composition sensitive to radiation in electromagnetic spectrum ranges for printing purposes, printing plate comprising said composition, use of said composition and image development process |
JP6206311B2 (ja) | 2014-04-22 | 2017-10-04 | 信越化学工業株式会社 | 光酸発生剤、化学増幅型レジスト材料及びパターン形成方法 |
ES2655798T3 (es) | 2014-12-08 | 2018-02-21 | Agfa Nv | Sistema para reducir los residuos de ablación |
EP3430475B1 (de) | 2016-03-16 | 2020-08-12 | Agfa Nv | Vorrichtung zur verarbeitung einer lithografiedruckplatte und entsprechendes verfahren |
CN106313870B (zh) | 2016-08-19 | 2018-06-15 | 浙江康尔达新材料股份有限公司 | 一种可成像涂层、热敏阴图平版印刷版及其制版方法 |
WO2019219570A1 (en) | 2018-05-14 | 2019-11-21 | Agfa Nv | A lithographic printing plate precursor |
EP3587113B1 (de) | 2018-06-21 | 2023-01-04 | Agfa Offset Bv | Lithographiedruckplattenvorläufer |
EP3587112B1 (de) | 2018-06-21 | 2024-04-03 | Eco3 Bv | Lithographiedruckplattenvorläufer |
EP3815900A1 (de) | 2019-10-31 | 2021-05-05 | Agfa Nv | Lithographiedruckplattenvorläufer und verfahren zur herstellung von hydrophoben harzpartikeln |
EP3875271A1 (de) | 2020-03-04 | 2021-09-08 | Agfa Nv | Lithographiedruckplattenvorläufer |
EP3892469B1 (de) | 2020-04-10 | 2023-11-08 | Eco3 Bv | Lithographiedruckplattenvorläufer |
EP3928983B1 (de) | 2020-06-24 | 2023-09-27 | Eco3 Bv | Lithografiedruckplattenvorläufer |
EP4171958A1 (de) | 2020-06-24 | 2023-05-03 | Agfa Offset Bv | Lithographiedruckplattenvorläufer |
US20230266667A1 (en) | 2020-06-24 | 2023-08-24 | Agfa Offset Bv | A Lithographic Printing Plate Precursor |
EP3960455A1 (de) | 2020-08-31 | 2022-03-02 | Agfa Offset Bv | Lithografiedruckplattenvorläufer |
US20230382100A1 (en) | 2020-10-09 | 2023-11-30 | Agfa Offset Bv | A Lithographic Printing Plate Precursor |
EP4035897A1 (de) | 2021-01-28 | 2022-08-03 | Agfa Offset Bv | Lithografiedruckplattenvorläufer |
EP4129682A1 (de) | 2021-08-05 | 2023-02-08 | Agfa Offset Bv | Lithografiedruckplattenvorläufer |
EP4223534A1 (de) | 2022-02-07 | 2023-08-09 | Agfa Offset Bv | Lithografiedruckplattenvorläufer |
EP4239411A1 (de) | 2022-03-04 | 2023-09-06 | Eco3 Bv | Verfahren und vorrichtung zum verarbeiten eine lithografiedruckplattenvorläufers |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05152717A (ja) * | 1991-11-28 | 1993-06-18 | Hitachi Chem Co Ltd | ポジ型感光性アニオン型電着塗料樹脂組成物、これを用いた電着塗装浴、電着塗装法及びプリント回路板の製造法 |
JPH06199770A (ja) * | 1992-12-28 | 1994-07-19 | Japan Synthetic Rubber Co Ltd | 新規オニウム塩およびそれを含有する感放射線性樹脂 組成物 |
KR100355254B1 (en) * | 1993-02-15 | 2003-03-31 | Clariant Finance Bvi Ltd | Positive type radiation-sensitive mixture |
JP3290234B2 (ja) * | 1993-03-26 | 2002-06-10 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
JP3340864B2 (ja) * | 1994-10-26 | 2002-11-05 | 富士写真フイルム株式会社 | ポジ型化学増幅レジスト組成物 |
US5731364A (en) * | 1996-01-24 | 1998-03-24 | Shipley Company, L.L.C. | Photoimageable compositions comprising multiple arylsulfonium photoactive compounds |
-
1998
- 1998-03-30 EP EP98105753A patent/EP0869393B1/de not_active Expired - Lifetime
- 1998-03-30 US US09/050,007 patent/US6037098A/en not_active Expired - Fee Related
- 1998-03-30 DE DE69800164T patent/DE69800164T2/de not_active Expired - Lifetime
- 1998-03-31 KR KR1019980011177A patent/KR100496174B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100496174B1 (ko) | 2006-01-27 |
DE69800164D1 (de) | 2000-07-06 |
KR19980080924A (ko) | 1998-11-25 |
US6037098A (en) | 2000-03-14 |
EP0869393A1 (de) | 1998-10-07 |
EP0869393B1 (de) | 2000-05-31 |
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