DE69705980D1 - Positiv-arbeitende fotoempfindliche Zusammensetzung - Google Patents

Positiv-arbeitende fotoempfindliche Zusammensetzung

Info

Publication number
DE69705980D1
DE69705980D1 DE69705980T DE69705980T DE69705980D1 DE 69705980 D1 DE69705980 D1 DE 69705980D1 DE 69705980 T DE69705980 T DE 69705980T DE 69705980 T DE69705980 T DE 69705980T DE 69705980 D1 DE69705980 D1 DE 69705980D1
Authority
DE
Germany
Prior art keywords
photosensitive composition
positive working
working photosensitive
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69705980T
Other languages
English (en)
Other versions
DE69705980T2 (de
Inventor
Toshiaki Aoai
Kunihiko Kodama
Kazuya Uenishi
Tsukasa Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of DE69705980D1 publication Critical patent/DE69705980D1/de
Application granted granted Critical
Publication of DE69705980T2 publication Critical patent/DE69705980T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69705980T 1996-03-08 1997-03-07 Positiv-arbeitende fotoempfindliche Zusammensetzung Expired - Lifetime DE69705980T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05200696A JP3587325B2 (ja) 1996-03-08 1996-03-08 ポジ型感光性組成物

Publications (2)

Publication Number Publication Date
DE69705980D1 true DE69705980D1 (de) 2001-09-13
DE69705980T2 DE69705980T2 (de) 2002-04-04

Family

ID=12902747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69705980T Expired - Lifetime DE69705980T2 (de) 1996-03-08 1997-03-07 Positiv-arbeitende fotoempfindliche Zusammensetzung

Country Status (4)

Country Link
US (1) US5837420A (de)
EP (1) EP0794457B1 (de)
JP (1) JP3587325B2 (de)
DE (1) DE69705980T2 (de)

Families Citing this family (56)

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US6165673A (en) * 1995-12-01 2000-12-26 International Business Machines Corporation Resist composition with radiation sensitive acid generator
US5998099A (en) * 1996-03-08 1999-12-07 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
TW482943B (en) * 1996-04-25 2002-04-11 Fuji Photo Film Co Ltd Positive working photosensitive composition
US5994023A (en) * 1996-07-19 1999-11-30 Agfa-Gevaert, N.V. Acid-sensitive substance and photosensitive compositions therewith
DE59806493D1 (de) * 1997-04-23 2003-01-16 Infineon Technologies Ag Chemisch verstärkter Resist
JP3813721B2 (ja) * 1997-12-26 2006-08-23 富士写真フイルム株式会社 ポジ型感光性組成物
US6103447A (en) 1998-02-25 2000-08-15 International Business Machines Corp. Approach to formulating irradiation sensitive positive resists
US6074800A (en) * 1998-04-23 2000-06-13 International Business Machines Corporation Photo acid generator compounds, photo resists, and method for improving bias
WO2000010056A1 (en) * 1998-08-14 2000-02-24 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
US6296984B1 (en) * 1999-03-12 2001-10-02 Agere Systems Guardian Corp. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
ATE269842T1 (de) * 1999-08-02 2004-07-15 Nippon Soda Co Photovernetzbare zusammensetzungen mit einer iodonium-salz-verbindung
KR100538501B1 (ko) * 1999-08-16 2005-12-23 신에쓰 가가꾸 고교 가부시끼가이샤 신규한 오늄염, 레지스트 재료용 광산발생제, 레지스트재료 및 패턴 형성 방법
US6416928B1 (en) 1999-10-06 2002-07-09 Shin-Etsu Chemical Co., Ltd. Onium salts, photoacid generators, resist compositions, and patterning process
US6468712B1 (en) 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography
EP1275666A4 (de) * 2000-04-04 2007-10-24 Daikin Ind Ltd Neues fluorpolymer mit säureaktiver gruppe und chemisch verstärkte photoresistzusammensetzungen die dieses enthalten
US6635400B2 (en) * 2000-04-17 2003-10-21 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US6383715B1 (en) * 2000-06-28 2002-05-07 Infineon Technologies Ag Strongly water-soluble photoacid generator resist compositions
JP4288445B2 (ja) 2000-10-23 2009-07-01 信越化学工業株式会社 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法
JP4288446B2 (ja) 2000-10-23 2009-07-01 信越化学工業株式会社 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
KR20030029053A (ko) * 2001-04-05 2003-04-11 아치 스페셜티 케미칼즈, 인코포레이티드 포토레지스트용 퍼플루오로알킬설폰산 화합물
CN1276303C (zh) * 2001-06-29 2006-09-20 Jsr株式会社 酸发生剂及辐射敏感树脂组合物
CN100371826C (zh) * 2002-08-26 2008-02-27 住友化学工业株式会社 磺酸盐和光刻胶组合物
DE60321641D1 (de) * 2002-11-12 2008-07-31 Tokuyama Corp Photopolymerisierbare Initiatorkombination und photopolymerisierbare Zusammensetzung
JP4271968B2 (ja) * 2003-03-13 2009-06-03 富士フイルム株式会社 ポジ型又はネガ型レジスト組成物及び化合物
DE602004023668D1 (de) * 2003-03-31 2009-12-03 Fujifilm Corp Positiv arbeitende Resistzusammensetzung
US7358408B2 (en) * 2003-05-16 2008-04-15 Az Electronic Materials Usa Corp. Photoactive compounds
KR101101668B1 (ko) * 2003-07-18 2011-12-30 스미또모 가가꾸 가부시키가이샤 설포네이트 및 레지스트 조성물
KR20060071423A (ko) * 2003-09-18 2006-06-26 미츠비시 가스 가가쿠 가부시키가이샤 레지스트용 화합물 및 감방사선성 조성물
JP4614056B2 (ja) * 2003-09-18 2011-01-19 三菱瓦斯化学株式会社 レジスト用化合物および感放射線性組成物
KR100900173B1 (ko) * 2004-02-20 2009-06-02 도오꾜오까고오교 가부시끼가이샤 패턴 형성 재료용 기재, 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7727702B2 (en) 2004-04-07 2010-06-01 Ciba Specialty Chemicals Corp. Method of coloring a coating composition
US20050271974A1 (en) * 2004-06-08 2005-12-08 Rahman M D Photoactive compounds
JP3946715B2 (ja) * 2004-07-28 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4468119B2 (ja) * 2004-09-08 2010-05-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
TWI390350B (zh) * 2004-10-29 2013-03-21 Jsr Corp Positive photosensitive insulating resin composition and hardened product thereof
JP4837323B2 (ja) * 2004-10-29 2011-12-14 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法および化合物
US7981588B2 (en) * 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
JP5138157B2 (ja) * 2005-05-17 2013-02-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4813103B2 (ja) 2005-06-17 2011-11-09 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4796792B2 (ja) * 2005-06-28 2011-10-19 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4732038B2 (ja) 2005-07-05 2011-07-27 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
KR100814232B1 (ko) * 2005-12-01 2008-03-17 주식회사 엘지화학 옥심 에스테르를 포함하는 트리아진계 광활성 화합물을포함하는 착색 감광성 조성물
US20080171270A1 (en) * 2007-01-16 2008-07-17 Munirathna Padmanaban Polymers Useful in Photoresist Compositions and Compositions Thereof
US8252503B2 (en) * 2007-08-24 2012-08-28 Az Electronic Materials Usa Corp. Photoresist compositions
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
WO2011104127A1 (en) 2010-02-24 2011-09-01 Basf Se Latent acids and their use
US11635688B2 (en) * 2012-03-08 2023-04-25 Kayaku Advanced Materials, Inc. Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates
JP6539760B2 (ja) * 2012-12-26 2019-07-03 東京応化工業株式会社 化合物
JP6671381B2 (ja) 2015-02-02 2020-03-25 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 潜在酸およびそれらの使用
JP7389589B2 (ja) * 2018-09-07 2023-11-30 住友化学株式会社 酸発生剤、レジスト組成物及びレジストパターンの製造方法
KR20220055289A (ko) * 2020-10-26 2022-05-03 삼성전자주식회사 포토레지스트 조성물, 그를 이용한 패턴의 형성 방법 및 그를 이용한 반도체 장치의 제조 방법

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US5580695A (en) * 1992-02-25 1996-12-03 Japan Synthetic Rubber Co., Ltd. Chemically amplified resist
JP3010607B2 (ja) * 1992-02-25 2000-02-21 ジェイエスアール株式会社 感放射線性樹脂組成物
US5347040A (en) * 1992-12-09 1994-09-13 E. I. Du Pont De Nemours And Company Sensitized onium salts
KR100230971B1 (ko) * 1994-01-28 1999-11-15 가나가와 지히로 술포늄 염 및 레지스트 조성물 (Sulfonium Salt and Resist Composition)

Also Published As

Publication number Publication date
EP0794457A2 (de) 1997-09-10
US5837420A (en) 1998-11-17
EP0794457B1 (de) 2001-08-08
JPH09244234A (ja) 1997-09-19
DE69705980T2 (de) 2002-04-04
JP3587325B2 (ja) 2004-11-10
EP0794457A3 (de) 1998-05-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP