DE69919161D1 - Wasserlösliche, negativ arbeitende photoresistzusammensetzung - Google Patents

Wasserlösliche, negativ arbeitende photoresistzusammensetzung

Info

Publication number
DE69919161D1
DE69919161D1 DE69919161T DE69919161T DE69919161D1 DE 69919161 D1 DE69919161 D1 DE 69919161D1 DE 69919161 T DE69919161 T DE 69919161T DE 69919161 T DE69919161 T DE 69919161T DE 69919161 D1 DE69919161 D1 DE 69919161D1
Authority
DE
Germany
Prior art keywords
soluble
water
photoresist composition
negative working
working photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69919161T
Other languages
English (en)
Other versions
DE69919161T2 (de
Inventor
Iain Mcculloch
J East
Ming Kang
Richard Keosian
Hyun-Nam Yoon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Application granted granted Critical
Publication of DE69919161D1 publication Critical patent/DE69919161D1/de
Publication of DE69919161T2 publication Critical patent/DE69919161T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F246/00—Copolymers in which the nature of only the monomers in minority is defined
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
DE69919161T 1998-05-27 1999-05-18 Wasserlösliche, negativ arbeitende photoresistzusammensetzung Expired - Fee Related DE69919161T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US85880 1987-08-14
US09/085,880 US5998092A (en) 1998-05-27 1998-05-27 Water soluble negative-working photoresist composition
PCT/EP1999/003418 WO1999061497A1 (en) 1998-05-27 1999-05-18 Water soluble negative-working photoresist composition

Publications (2)

Publication Number Publication Date
DE69919161D1 true DE69919161D1 (de) 2004-09-09
DE69919161T2 DE69919161T2 (de) 2005-08-11

Family

ID=22194573

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69919161T Expired - Fee Related DE69919161T2 (de) 1998-05-27 1999-05-18 Wasserlösliche, negativ arbeitende photoresistzusammensetzung

Country Status (9)

Country Link
US (1) US5998092A (de)
EP (1) EP1084165B1 (de)
JP (1) JP2002516422A (de)
KR (1) KR20010043752A (de)
CN (1) CN1145651C (de)
DE (1) DE69919161T2 (de)
MY (1) MY114642A (de)
TW (1) TW476867B (de)
WO (1) WO1999061497A1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI234567B (en) * 1998-11-27 2005-06-21 Hyundai Electronics Ind Cross-linker for photoresist, and photoresist composition comprising the same
KR100557609B1 (ko) * 1999-02-22 2006-03-10 주식회사 하이닉스반도체 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물
KR100520670B1 (ko) 1999-05-06 2005-10-10 주식회사 하이닉스반도체 포토레지스트 패턴의 형성방법
EP1240552B1 (de) * 1999-08-13 2012-09-19 Intellectual Ventures Holding 40 LLC Wässrig entwickelbare fotoresistzusammensetzungen
US6696370B2 (en) * 2000-06-16 2004-02-24 The Penn State Research Foundation Aqueous-based photolithography on organic materials
JP4790153B2 (ja) * 2000-09-01 2011-10-12 富士通株式会社 ネガ型レジスト組成物、レジストパターンの形成方法及び電子デバイスの製造方法
KR100759442B1 (ko) * 2001-08-10 2007-10-04 삼성에스디아이 주식회사 포토레지스트 중합체 및 이를 포함하는 포토레지스트조성물과 형광막 조성물
US6800415B2 (en) 2001-09-28 2004-10-05 Clariant Finance (Bvi) Ltd Negative-acting aqueous photoresist composition
US6634805B1 (en) 2001-10-10 2003-10-21 Advanced Micro Devices, Inc. Parallel plate development
US6819427B1 (en) 2001-10-10 2004-11-16 Advanced Micro Devices, Inc. Apparatus of monitoring and optimizing the development of a photoresist material
US7208249B2 (en) * 2002-09-30 2007-04-24 Applied Materials, Inc. Method of producing a patterned photoresist used to prepare high performance photomasks
US6905621B2 (en) * 2002-10-10 2005-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing the etch transfer of sidelobes in contact hole patterns
US7235348B2 (en) * 2003-05-22 2007-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Water soluble negative tone photoresist
US7300739B2 (en) * 2003-05-29 2007-11-27 International Business Machines Corporation Negative resists based on a acid-catalyzed elimination of polar molecules
US7033735B2 (en) 2003-11-17 2006-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Water soluble negative tone photoresist
IN263389B (de) 2005-11-22 2014-01-31 Segetis Inc
KR101389057B1 (ko) 2006-04-13 2014-05-13 시바 홀딩 인크 설포늄 염 개시제
BRPI0818370A2 (pt) * 2007-10-09 2017-05-16 Segetis Inc métodos de fabricar cetais e acetais
EP2205606A2 (de) * 2007-10-09 2010-07-14 Segetis, Inc. Polyketalverbindungen, synthese und anwendungen
WO2009146202A2 (en) * 2008-04-16 2009-12-03 Segetis, Inc. Transketalized compositions, synthesis, and applications
CA2736636A1 (en) * 2008-09-25 2010-04-01 Segetis, Inc. Ketal ester derivatives
JP5882204B2 (ja) 2009-06-22 2016-03-09 サジティス・インコーポレイテッド ケタール化合物およびそれらの使用
US20110300083A1 (en) 2010-05-10 2011-12-08 Segetis, Inc. Personal care formulations containing alkyl ketal esters and methods of manufacture
JP5886856B2 (ja) 2010-08-03 2016-03-16 サジティス・インコーポレイテッド アセタールおよびケタールの製造方法、ならびにこの方法により製造されるアセタールおよびケタール
CA2803389C (en) 2010-08-12 2016-10-11 Segetis, Inc. Carboxy ester ketal removal compositions, methods of manufacture, and uses thereof
US9074065B2 (en) 2010-08-12 2015-07-07 Segetis, Inc. Latex coating compositions including carboxy ester ketal coalescents, methods of manufacture, and uses thereof
WO2012033813A2 (en) 2010-09-07 2012-03-15 Segetis, Inc. Compositions for dyeing keratin fibers
WO2012065116A2 (en) 2010-11-11 2012-05-18 Segetis, Inc. Polyhydroxy ketal ester adducts, methods of manufacture and uses thereof
BR112013009359A2 (pt) 2010-11-11 2016-07-26 Segetis Inc ácidos cetocarboxílicos, ésteres cetocarboxílicos, métodos de fabricação e usos dos mesmos.
BR112013011149A2 (pt) 2010-11-11 2016-08-02 Segetis Inc adutos poliacetal, métodos de fabricação e seus usos.
JP5902671B2 (ja) * 2011-03-31 2016-04-13 キッセイ薬品工業株式会社 ベンジルピラゾール誘導体の製造方法およびその製造中間体
US20130087073A1 (en) 2011-10-11 2013-04-11 Segetis, Inc. Stabilized levulinic ester ketals
US9458414B2 (en) 2012-09-21 2016-10-04 Gfbiochemicals Limited Cleaning, surfactant, and personal care compositions
WO2014085609A1 (en) 2012-11-29 2014-06-05 Segetis, Inc. Carboxy ester ketals, methods of manufacture, and uses thereof
US9695280B2 (en) * 2015-03-03 2017-07-04 Ricoh Co., Ltd. Methods for solid freeform fabrication
US9808993B2 (en) 2015-03-03 2017-11-07 Ricoh Co., Ltd. Method for solid freeform fabrication
US10066119B2 (en) 2015-03-03 2018-09-04 Ricoh Co., Ltd. Method for solid freeform fabrication
US10688770B2 (en) 2015-03-03 2020-06-23 Ricoh Co., Ltd. Methods for solid freeform fabrication
TWI746628B (zh) * 2016-12-08 2021-11-21 南韓商三星電子股份有限公司 光阻組成物以及使用該光阻組成物形成精細圖案的方法
KR102428331B1 (ko) * 2016-12-08 2022-08-04 삼성전자주식회사 포토 레지스트 조성물 및 이를 이용한 미세 패턴 형성 방법

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Publication number Priority date Publication date Assignee Title
US4737426A (en) * 1985-05-15 1988-04-12 Ciba-Geigy Corporation Cyclic acetals or ketals of beta-keto esters or amides
EP0347381B1 (de) * 1988-06-13 1992-02-12 Ciba-Geigy Ag Ungesättigte beta-Ketoesteracetale und ihre Anwendungen
US5532106A (en) * 1994-08-31 1996-07-02 Cornell Research Foundation, Inc. Positive-tone photoresist containing diester dissolution inhibitors
KR0164981B1 (ko) * 1995-11-28 1999-03-20 김흥기 아세탈기를 함유하는 알콕시-스틸렌 중합체와 그의 제조방법 및 알콕시-스틸렌 중합체를 주요 구성성분으로 하는 화학증폭형 포토레지스트 재료

Also Published As

Publication number Publication date
EP1084165A1 (de) 2001-03-21
JP2002516422A (ja) 2002-06-04
TW476867B (en) 2002-02-21
KR20010043752A (ko) 2001-05-25
EP1084165B1 (de) 2004-08-04
CN1303401A (zh) 2001-07-11
US5998092A (en) 1999-12-07
DE69919161T2 (de) 2005-08-11
MY114642A (en) 2002-11-30
WO1999061497A1 (en) 1999-12-02
CN1145651C (zh) 2004-04-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU

8339 Ceased/non-payment of the annual fee