DE69738465D1 - Schwellenspannung von Transistoren aktiv vorspannende Integrierte Halbleiterschaltung und zugehörige Verfahren - Google Patents

Schwellenspannung von Transistoren aktiv vorspannende Integrierte Halbleiterschaltung und zugehörige Verfahren

Info

Publication number
DE69738465D1
DE69738465D1 DE69738465T DE69738465T DE69738465D1 DE 69738465 D1 DE69738465 D1 DE 69738465D1 DE 69738465 T DE69738465 T DE 69738465T DE 69738465 T DE69738465 T DE 69738465T DE 69738465 D1 DE69738465 D1 DE 69738465D1
Authority
DE
Germany
Prior art keywords
integrated circuit
threshold voltage
semiconductor integrated
related methods
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69738465T
Other languages
English (en)
Inventor
So Jason Siucheong
Tsiu Chiu Chan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Application granted granted Critical
Publication of DE69738465D1 publication Critical patent/DE69738465D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
DE69738465T 1996-12-03 1997-11-25 Schwellenspannung von Transistoren aktiv vorspannende Integrierte Halbleiterschaltung und zugehörige Verfahren Expired - Lifetime DE69738465D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/758,930 US5883544A (en) 1996-12-03 1996-12-03 Integrated circuit actively biasing the threshold voltage of transistors and related methods

Publications (1)

Publication Number Publication Date
DE69738465D1 true DE69738465D1 (de) 2008-03-06

Family

ID=25053700

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69738465T Expired - Lifetime DE69738465D1 (de) 1996-12-03 1997-11-25 Schwellenspannung von Transistoren aktiv vorspannende Integrierte Halbleiterschaltung und zugehörige Verfahren

Country Status (4)

Country Link
US (1) US5883544A (de)
EP (1) EP0846997B1 (de)
JP (1) JPH10229332A (de)
DE (1) DE69738465D1 (de)

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Publication number Priority date Publication date Assignee Title
US5929695A (en) * 1997-06-02 1999-07-27 Stmicroelectronics, Inc. Integrated circuit having selective bias of transistors for low voltage and low standby current and related methods
US6097242A (en) 1998-02-26 2000-08-01 Micron Technology, Inc. Threshold voltage compensation circuits for low voltage and low power CMOS integrated circuits
US6211727B1 (en) * 1998-02-26 2001-04-03 Stmicroelectronics, Inc. Circuit and method for intelligently regulating a supply voltage
JP2000165220A (ja) * 1998-11-27 2000-06-16 Fujitsu Ltd 起動回路及び半導体集積回路装置
TW501278B (en) * 2000-06-12 2002-09-01 Intel Corp Apparatus and circuit having reduced leakage current and method therefor
AU2001270290A1 (en) 2000-07-03 2002-01-14 Broadcom Corporation Bis circuit for establishing a plurality of bias voltages
US6429726B1 (en) * 2001-03-27 2002-08-06 Intel Corporation Robust forward body bias generation circuit with digital trimming for DC power supply variation
US6518827B1 (en) * 2001-07-27 2003-02-11 International Business Machines Corporation Sense amplifier threshold compensation
JP4090231B2 (ja) 2001-11-01 2008-05-28 株式会社ルネサステクノロジ 半導体集積回路装置
JP2004165649A (ja) * 2002-10-21 2004-06-10 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US7498865B2 (en) * 2003-02-25 2009-03-03 Panasonic Corporation Semiconductor integrated circuit with reduced speed variations
JP4221274B2 (ja) * 2003-10-31 2009-02-12 株式会社東芝 半導体集積回路および電源電圧・基板バイアス制御回路
WO2007012993A2 (en) * 2005-07-28 2007-02-01 Koninklijke Philips Electronics N.V. Transistor bulk control for compensating frequency and/or process variations
US7667527B2 (en) * 2006-11-20 2010-02-23 International Business Machines Corporation Circuit to compensate threshold voltage variation due to process variation
US7952423B2 (en) * 2008-09-30 2011-05-31 Altera Corporation Process/design methodology to enable high performance logic and analog circuits using a single process
JP5573048B2 (ja) * 2009-08-25 2014-08-20 富士通株式会社 半導体集積回路
US8416011B2 (en) * 2010-11-08 2013-04-09 Lsi Corporation Circuit and method for generating body bias voltage for an integrated circuit
US9048136B2 (en) 2011-10-26 2015-06-02 GlobalFoundries, Inc. SRAM cell with individual electrical device threshold control
US9029956B2 (en) 2011-10-26 2015-05-12 Global Foundries, Inc. SRAM cell with individual electrical device threshold control

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
US3609414A (en) * 1968-08-20 1971-09-28 Ibm Apparatus for stabilizing field effect transistor thresholds
US4142114A (en) * 1977-07-18 1979-02-27 Mostek Corporation Integrated circuit with threshold regulation
US4435652A (en) * 1981-05-26 1984-03-06 Honeywell, Inc. Threshold voltage control network for integrated circuit field-effect trransistors
US4458212A (en) * 1981-12-30 1984-07-03 Mostek Corporation Compensated amplifier having pole zero tracking
US4473758A (en) * 1983-02-07 1984-09-25 Motorola Inc. Substrate bias control circuit and method
JPS6159688A (ja) * 1984-08-31 1986-03-27 Hitachi Ltd 半導体集積回路装置
US4686388A (en) * 1985-03-12 1987-08-11 Pitney Bowes Inc. Integrated circuit substrate bias selection circuit
JPS6238591A (ja) * 1985-08-14 1987-02-19 Fujitsu Ltd 相補型の半導体メモリ装置
US4791318A (en) * 1987-12-15 1988-12-13 Analog Devices, Inc. MOS threshold control circuit
JPH0756931B2 (ja) * 1988-04-18 1995-06-14 三菱電機株式会社 閾値制御型電子装置およびそれを用いた比較器
KR0134773B1 (ko) * 1988-07-05 1998-04-20 Hitachi Ltd 반도체 기억장치
IT1225608B (it) * 1988-07-06 1990-11-22 Sgs Thomson Microelectronics Regolazione della tensione prodotta da un moltiplicatore di tensione.
IT1225612B (it) * 1988-07-29 1990-11-22 Sgs Thomson Microelectronics Processo di fabbricazione di dispositivi integrati cmos con lunghezza di gate ridotta e transistori a canale superficiale
FR2659165A1 (fr) * 1990-03-05 1991-09-06 Sgs Thomson Microelectronics Memoire ultra-rapide comportant un limiteur de la tension de drain des cellules.
US5099148A (en) * 1990-10-22 1992-03-24 Sgs-Thomson Microelectronics, Inc. Integrated circuit having multiple data outputs sharing a resistor network
US5397934A (en) * 1993-04-05 1995-03-14 National Semiconductor Corporation Apparatus and method for adjusting the threshold voltage of MOS transistors
FR2717918B1 (fr) * 1994-03-25 1996-05-24 Suisse Electronique Microtech Circuit pour contrôler les tensions entre caisson et sources des transistors mos et système d'asservissement du rapport entre les courants dynamique et statique d'un circuit logique mos.

Also Published As

Publication number Publication date
EP0846997A2 (de) 1998-06-10
JPH10229332A (ja) 1998-08-25
US5883544A (en) 1999-03-16
EP0846997A3 (de) 1999-02-10
EP0846997B1 (de) 2008-01-16

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