DE69728999D1 - Substratglattungsverfahren - Google Patents

Substratglattungsverfahren

Info

Publication number
DE69728999D1
DE69728999D1 DE69728999T DE69728999T DE69728999D1 DE 69728999 D1 DE69728999 D1 DE 69728999D1 DE 69728999 T DE69728999 T DE 69728999T DE 69728999 T DE69728999 T DE 69728999T DE 69728999 D1 DE69728999 D1 DE 69728999D1
Authority
DE
Germany
Prior art keywords
substratglattungsverfahren
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69728999T
Other languages
English (en)
Other versions
DE69728999T2 (de
Inventor
Co Muraguchi
Akira-Catalysts Chem Nakashima
Co Tonai
Michio-Catalysts Chemi Komatsu
Katsuyuki Machida
Hakaru Kyuragi
Kazuo Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
JGC Catalysts and Chemicals Ltd
Original Assignee
Catalysts and Chemicals Industries Co Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Catalysts and Chemicals Industries Co Ltd, Nippon Telegraph and Telephone Corp filed Critical Catalysts and Chemicals Industries Co Ltd
Application granted granted Critical
Publication of DE69728999D1 publication Critical patent/DE69728999D1/de
Publication of DE69728999T2 publication Critical patent/DE69728999T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/28—Processes for applying liquids or other fluent materials performed by transfer from the surfaces of elements carrying the liquid or other fluent material, e.g. brushes, pads, rollers
    • B05D1/286—Processes for applying liquids or other fluent materials performed by transfer from the surfaces of elements carrying the liquid or other fluent material, e.g. brushes, pads, rollers using a temporary backing to which the coating has been applied
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
DE69728999T 1996-11-11 1997-10-31 Substratglättungsverfahren Expired - Lifetime DE69728999T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP29889296 1996-11-11
JP29889296 1996-11-11
JP30842796 1996-11-19
JP30842796 1996-11-19
PCT/JP1997/003979 WO1998021750A1 (fr) 1996-11-11 1997-10-31 Procede d'aplanissement d'un substrat, et procede de fabrication de substrats recouverts d'un film et de dispositifs a semi-conducteur

Publications (2)

Publication Number Publication Date
DE69728999D1 true DE69728999D1 (de) 2004-06-09
DE69728999T2 DE69728999T2 (de) 2005-04-28

Family

ID=26561699

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69728999T Expired - Lifetime DE69728999T2 (de) 1996-11-11 1997-10-31 Substratglättungsverfahren

Country Status (7)

Country Link
US (1) US6340641B1 (de)
EP (1) EP0951057B1 (de)
JP (1) JP3420590B2 (de)
KR (1) KR100342575B1 (de)
DE (1) DE69728999T2 (de)
TW (1) TW529094B (de)
WO (1) WO1998021750A1 (de)

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JP4567282B2 (ja) * 2001-07-16 2010-10-20 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4527068B2 (ja) * 2001-07-16 2010-08-18 株式会社半導体エネルギー研究所 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4027740B2 (ja) * 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5057619B2 (ja) * 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4602261B2 (ja) * 2001-08-10 2010-12-22 株式会社半導体エネルギー研究所 剥離方法および半導体装置の作製方法
JP4472238B2 (ja) * 2001-08-10 2010-06-02 株式会社半導体エネルギー研究所 剥離方法および半導体装置の作製方法
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
TWI264121B (en) * 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
US7083752B2 (en) 2002-05-20 2006-08-01 Eastman Kodak Company Cellulose acetate films prepared by coating methods
US7163738B2 (en) 2002-05-20 2007-01-16 Eastman Kodak Company Polyvinyl alcohol films prepared by coating methods
US20030215581A1 (en) 2002-05-20 2003-11-20 Eastman Kodak Company Polycarbonate films prepared by coating methods
US7012746B2 (en) 2002-05-20 2006-03-14 Eastman Kodak Company Polyvinyl butyral films prepared by coating methods
US7048823B2 (en) 2002-05-20 2006-05-23 Eastman Kodak Company Acrylic films prepared by coating methods
JP4018596B2 (ja) 2002-10-02 2007-12-05 株式会社東芝 半導体装置の製造方法
US7125504B2 (en) 2002-11-13 2006-10-24 Eastman Kodak Company Optical switch microfilms
KR100503527B1 (ko) * 2003-02-12 2005-07-26 삼성전자주식회사 퍼하이드로 폴리실라잔을 포함하는 반도체 소자 제조용조성물 및 이를 이용한 반도체 소자의 제조방법
DE10341670A1 (de) * 2003-09-08 2005-04-07 Henkel Kgaa Verfahren zur Oberflächenmodifizierung von beschichteten Substraten
KR100886292B1 (ko) * 2003-09-09 2009-03-04 산요덴키가부시키가이샤 회로 소자를 포함하는 반도체 모듈과 반도체 장치, 그들의 제조 방법 및 표시 장치
JP2005166700A (ja) * 2003-11-28 2005-06-23 Toshiba Corp 半導体装置及びその製造方法
US20060003600A1 (en) * 2004-06-30 2006-01-05 Barns Chris E Contact planarization for integrated circuit processing
JP4780277B2 (ja) * 2004-10-15 2011-09-28 Ｊｓｒ株式会社 表面疎水化用組成物、表面疎水化方法、半導体装置およびその製造方法
DE102005038956B3 (de) * 2005-08-16 2007-03-22 Infineon Technologies Ag Verfahren zum Beschichten einer Struktur mit Halbleiterchips
JP2007095883A (ja) * 2005-09-28 2007-04-12 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成方法及びシートフィルム
JP4917466B2 (ja) * 2007-03-30 2012-04-18 日本電信電話株式会社 薄膜形成方法
JP2009016405A (ja) * 2007-06-30 2009-01-22 Zycube:Kk 固体撮像装置
JP5524776B2 (ja) * 2010-09-10 2014-06-18 日本電信電話株式会社 薄膜形成方法及びシートフィルム
WO2014129519A1 (en) 2013-02-20 2014-08-28 Semiconductor Energy Laboratory Co., Ltd. Peeling method, semiconductor device, and peeling apparatus
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
CN111868920A (zh) * 2018-03-15 2020-10-30 应用材料公司 用于半导体器件封装制造工艺的平坦化
FR3095138B1 (fr) * 2019-04-16 2021-05-14 Commissariat Energie Atomique Procédé de formation d’un film de particules à la surface d’un substrat

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JPS60182138A (ja) * 1984-02-29 1985-09-17 Tomoegawa Paper Co Ltd ウエフア上に保護被膜を形成させる方法及び転写シ−ト
US4865875A (en) 1986-02-28 1989-09-12 Digital Equipment Corporation Micro-electronics devices and methods of manufacturing same
JP2847768B2 (ja) * 1989-06-21 1999-01-20 ソニー株式会社 塗布膜の形成方法及び半導体装置の製造方法
US4994302A (en) * 1989-06-27 1991-02-19 Digital Equipment Corporation Method of manufacturing thick-film devices
JPH03192215A (ja) * 1989-12-21 1991-08-22 Matsushita Electric Ind Co Ltd パネル基板とそのパネル基板の作成方法
US5312576B1 (en) 1991-05-24 2000-04-18 World Properties Inc Method for making particulate filled composite film
FR2678940B1 (fr) * 1991-05-24 1996-10-18 Rogers Corp Film composite charge de particules et procede pour sa fabrication.
US5145723A (en) * 1991-06-05 1992-09-08 Dow Corning Corporation Process for coating a substrate with silica
KR100207950B1 (ko) * 1991-12-27 1999-07-15 박영구 알카리 용출 방지용 실리카 막의 형성방법
JPH05243223A (ja) * 1992-02-28 1993-09-21 Fujitsu Ltd 集積回路装置の製造方法
JP3073313B2 (ja) 1992-05-12 2000-08-07 触媒化成工業株式会社 半導体装置およびその製造方法
JP3241823B2 (ja) * 1992-10-20 2001-12-25 触媒化成工業株式会社 シリカ系被膜形成用塗布液および被膜付基材
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Also Published As

Publication number Publication date
KR100342575B1 (ko) 2002-07-04
JP3420590B2 (ja) 2003-06-23
EP0951057A1 (de) 1999-10-20
DE69728999T2 (de) 2005-04-28
US6340641B1 (en) 2002-01-22
TW529094B (en) 2003-04-21
EP0951057A4 (de) 2000-04-05
WO1998021750A1 (fr) 1998-05-22
EP0951057B1 (de) 2004-05-06
KR20000053183A (ko) 2000-08-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JGC CATALYSTS AND CHEMICALS LTD., KAWASAKI-SHI, JP

Owner name: NIPPON TELEGRAPH AND TELEPHONE CORP., TOKIO/TO, JP