DE69633267D1 - Verfahren zur Herstellung eines invertierten Dünnschichtfeldeffekttransistors - Google Patents

Verfahren zur Herstellung eines invertierten Dünnschichtfeldeffekttransistors

Info

Publication number
DE69633267D1
DE69633267D1 DE69633267T DE69633267T DE69633267D1 DE 69633267 D1 DE69633267 D1 DE 69633267D1 DE 69633267 T DE69633267 T DE 69633267T DE 69633267 T DE69633267 T DE 69633267T DE 69633267 D1 DE69633267 D1 DE 69633267D1
Authority
DE
Germany
Prior art keywords
manufacturing
thin film
field effect
effect transistor
film field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633267T
Other languages
English (en)
Other versions
DE69633267T2 (de
Inventor
Michael G Hack
Rene A Lujan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE69633267D1 publication Critical patent/DE69633267D1/de
Publication of DE69633267T2 publication Critical patent/DE69633267T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
DE1996633267 1995-12-22 1996-12-19 Verfahren zur Herstellung eines invertierten Dünnschichtfeldeffekttransistors Expired - Lifetime DE69633267T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/577,634 US5733804A (en) 1995-12-22 1995-12-22 Fabricating fully self-aligned amorphous silicon device
US577634 1995-12-22

Publications (2)

Publication Number Publication Date
DE69633267D1 true DE69633267D1 (de) 2004-10-07
DE69633267T2 DE69633267T2 (de) 2005-01-13

Family

ID=24309533

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1996633267 Expired - Lifetime DE69633267T2 (de) 1995-12-22 1996-12-19 Verfahren zur Herstellung eines invertierten Dünnschichtfeldeffekttransistors

Country Status (4)

Country Link
US (1) US5733804A (de)
EP (1) EP0780892B1 (de)
JP (2) JPH09181328A (de)
DE (1) DE69633267T2 (de)

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KR100229676B1 (ko) * 1996-08-30 1999-11-15 구자홍 셀프얼라인 박막트랜지스터 제조방법
USRE38466E1 (en) * 1996-11-12 2004-03-16 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
US5920772A (en) * 1997-06-27 1999-07-06 Industrial Technology Research Institute Method of fabricating a hybrid polysilicon/amorphous silicon TFT
US6107641A (en) * 1997-09-10 2000-08-22 Xerox Corporation Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
US6504175B1 (en) * 1998-04-28 2003-01-07 Xerox Corporation Hybrid polycrystalline and amorphous silicon structures on a shared substrate
KR100590742B1 (ko) 1998-05-11 2007-04-25 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
US6566172B1 (en) * 1998-06-23 2003-05-20 The Penn State Research Foundation Method for manufacture of fully self-aligned tri-layer a-Si:H thin film transistors
KR100451381B1 (ko) 1998-07-30 2005-06-01 엘지.필립스 엘시디 주식회사 박막트랜지스터및그제조방법
DE19927694C1 (de) * 1999-06-17 2000-11-02 Lutz Fink Halbleitersensor mit einer Pixelstruktur
US20020121605A1 (en) * 1999-06-17 2002-09-05 Lutz Fink Semiconductor sensor and method for its wiring
GB9919913D0 (en) 1999-08-24 1999-10-27 Koninkl Philips Electronics Nv Thin-film transistors and method for producing the same
WO2001017029A1 (en) 1999-08-31 2001-03-08 E Ink Corporation Transistor for an electronically driven display
US6245602B1 (en) * 1999-11-18 2001-06-12 Xerox Corporation Top gate self-aligned polysilicon TFT and a method for its production
DE10034873B4 (de) * 2000-07-18 2005-10-13 Pacifica Group Technologies Pty Ltd Verfahren und Bremsanlage zum Regeln des Bremsvorgangs bei einem Kraftfahrzeug
JP2002141514A (ja) * 2000-11-07 2002-05-17 Sanyo Electric Co Ltd ボトムゲート型薄膜トランジスタ及びその製造方法
TW495986B (en) * 2001-05-11 2002-07-21 Au Optronics Corp Method of manufacturing thin film transistor flat panel display
US7507648B2 (en) * 2005-06-30 2009-03-24 Ramesh Kakkad Methods of fabricating crystalline silicon film and thin film transistors
US7344928B2 (en) * 2005-07-28 2008-03-18 Palo Alto Research Center Incorporated Patterned-print thin-film transistors with top gate geometry
US7943447B2 (en) * 2007-08-08 2011-05-17 Ramesh Kakkad Methods of fabricating crystalline silicon, thin film transistors, and solar cells
JP2009094413A (ja) * 2007-10-11 2009-04-30 Sumitomo Chemical Co Ltd 薄膜能動素子、有機発光装置、表示装置、電子デバイスおよび薄膜能動素子の製造方法
US11791159B2 (en) 2019-01-17 2023-10-17 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors
US11562903B2 (en) 2019-01-17 2023-01-24 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors

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JPH0262051A (ja) * 1988-08-26 1990-03-01 Fujitsu Ltd 薄膜トランジスタの製造方法
JP2737982B2 (ja) * 1989-02-15 1998-04-08 富士通株式会社 薄膜トランジスタの製造方法
JPH02295132A (ja) * 1989-05-09 1990-12-06 Fujitsu Ltd 薄膜トランジスタの製造方法
JPH03185840A (ja) * 1989-12-15 1991-08-13 Casio Comput Co Ltd 薄膜トランジスタ
JPH03186820A (ja) * 1989-12-15 1991-08-14 Sharp Corp マトリクス型液晶表示基板の製造方法
US5010027A (en) * 1990-03-21 1991-04-23 General Electric Company Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure
JP2938121B2 (ja) * 1990-03-30 1999-08-23 株式会社東芝 薄膜半導体装置の製造方法
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JPH05136419A (ja) * 1991-11-13 1993-06-01 Toshiba Corp 薄膜トランジスタ
US5241192A (en) * 1992-04-02 1993-08-31 General Electric Company Fabrication method for a self-aligned thin film transistor having reduced end leakage and device formed thereby
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JP2530990B2 (ja) * 1992-10-15 1996-09-04 富士通株式会社 薄膜トランジスタ・マトリクスの製造方法
JPH06188422A (ja) * 1992-12-18 1994-07-08 Fuji Xerox Co Ltd 薄膜トランジスタ
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JPH07142737A (ja) * 1993-11-18 1995-06-02 Sharp Corp 薄膜トランジスタの製造方法
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US5491347A (en) * 1994-04-28 1996-02-13 Xerox Corporation Thin-film structure with dense array of binary control units for presenting images
US5486939A (en) * 1994-04-28 1996-01-23 Xerox Corporation Thin-film structure with insulating and smoothing layers between crossing conductive lines

Also Published As

Publication number Publication date
DE69633267T2 (de) 2005-01-13
JP2011023740A (ja) 2011-02-03
EP0780892A2 (de) 1997-06-25
US5733804A (en) 1998-03-31
JPH09181328A (ja) 1997-07-11
EP0780892B1 (de) 2004-09-01
EP0780892A3 (de) 1997-10-15

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