DE69622270T2 - Silizium auf isolator-bipolartransistor mit erhöhter durchbruchspannung - Google Patents

Silizium auf isolator-bipolartransistor mit erhöhter durchbruchspannung

Info

Publication number
DE69622270T2
DE69622270T2 DE69622270T DE69622270T DE69622270T2 DE 69622270 T2 DE69622270 T2 DE 69622270T2 DE 69622270 T DE69622270 T DE 69622270T DE 69622270 T DE69622270 T DE 69622270T DE 69622270 T2 DE69622270 T2 DE 69622270T2
Authority
DE
Germany
Prior art keywords
isolator
silicon
bipolar transistor
breakthrough voltage
increased breakthrough
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69622270T
Other languages
English (en)
Other versions
DE69622270D1 (de
Inventor
Andrej Litwin
Torkel Arnborg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of DE69622270D1 publication Critical patent/DE69622270D1/de
Application granted granted Critical
Publication of DE69622270T2 publication Critical patent/DE69622270T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE69622270T 1995-04-13 1996-04-09 Silizium auf isolator-bipolartransistor mit erhöhter durchbruchspannung Expired - Lifetime DE69622270T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9501385A SE515867C2 (sv) 1995-04-13 1995-04-13 Bipolär SOI-transistor
PCT/SE1996/000458 WO1996032798A1 (en) 1995-04-13 1996-04-09 Bipolar silicon-on-insulator transistor with increased breakdown voltage

Publications (2)

Publication Number Publication Date
DE69622270D1 DE69622270D1 (de) 2002-08-14
DE69622270T2 true DE69622270T2 (de) 2003-02-06

Family

ID=20397959

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69622270T Expired - Lifetime DE69622270T2 (de) 1995-04-13 1996-04-09 Silizium auf isolator-bipolartransistor mit erhöhter durchbruchspannung

Country Status (11)

Country Link
EP (1) EP0820645B1 (de)
JP (1) JP4102434B2 (de)
KR (1) KR100372035B1 (de)
CN (1) CN1083162C (de)
AU (1) AU5351696A (de)
CA (1) CA2217049A1 (de)
DE (1) DE69622270T2 (de)
ES (1) ES2179941T3 (de)
HK (1) HK1010606A1 (de)
SE (1) SE515867C2 (de)
WO (1) WO1996032798A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006070304A2 (en) * 2004-12-28 2006-07-06 Koninklijke Philips Electronics N.V. Soi device
FR2978614B1 (fr) * 2011-07-25 2014-09-05 Altis Semiconductor Snc Substrat semi-conducteur comprenant des zones dopees formant une jonction p-n
JP6125866B2 (ja) * 2013-03-26 2017-05-10 新日本無線株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
US4766482A (en) * 1986-12-09 1988-08-23 General Electric Company Semiconductor device and method of making the same
JPH02327A (ja) * 1987-10-09 1990-01-05 Fujitsu Ltd 半導体装置
US4843448A (en) * 1988-04-18 1989-06-27 The United States Of America As Represented By The Secretary Of The Navy Thin-film integrated injection logic
US4902633A (en) * 1988-05-09 1990-02-20 Motorola, Inc. Process for making a bipolar integrated circuit
US5237193A (en) * 1988-06-24 1993-08-17 Siliconix Incorporated Lightly doped drain MOSFET with reduced on-resistance
US5262345A (en) * 1990-01-25 1993-11-16 Analog Devices, Inc. Complimentary bipolar/CMOS fabrication method
JPH0479364A (ja) * 1990-07-23 1992-03-12 Sony Corp 半導体装置の製造方法
JPH04213219A (ja) * 1990-12-07 1992-08-04 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路
JP2654268B2 (ja) * 1991-05-13 1997-09-17 株式会社東芝 半導体装置の使用方法

Also Published As

Publication number Publication date
JP4102434B2 (ja) 2008-06-18
KR19980703869A (ko) 1998-12-05
CA2217049A1 (en) 1996-10-17
ES2179941T3 (es) 2003-02-01
SE9501385D0 (sv) 1995-04-13
DE69622270D1 (de) 2002-08-14
KR100372035B1 (ko) 2003-06-19
SE515867C2 (sv) 2001-10-22
SE9501385L (sv) 1996-10-14
WO1996032798A1 (en) 1996-10-17
CN1083162C (zh) 2002-04-17
AU5351696A (en) 1996-10-30
JPH11503573A (ja) 1999-03-26
EP0820645A1 (de) 1998-01-28
HK1010606A1 (en) 1999-06-25
CN1181842A (zh) 1998-05-13
EP0820645B1 (de) 2002-07-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: INFINEON TECHNOLOGIES AG, 81669 MUENCHEN, DE