HK1010606A1 - Bipolar silicon-on-insulator transistor with increased breakdown voltage - Google Patents

Bipolar silicon-on-insulator transistor with increased breakdown voltage

Info

Publication number
HK1010606A1
HK1010606A1 HK98111607A HK98111607A HK1010606A1 HK 1010606 A1 HK1010606 A1 HK 1010606A1 HK 98111607 A HK98111607 A HK 98111607A HK 98111607 A HK98111607 A HK 98111607A HK 1010606 A1 HK1010606 A1 HK 1010606A1
Authority
HK
Hong Kong
Prior art keywords
breakdown voltage
increased breakdown
insulator transistor
bipolar silicon
bipolar
Prior art date
Application number
HK98111607A
Other languages
English (en)
Inventor
Andrej Litwin
Torkel Arnborg
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of HK1010606A1 publication Critical patent/HK1010606A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
HK98111607A 1995-04-13 1998-10-29 Bipolar silicon-on-insulator transistor with increased breakdown voltage HK1010606A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9501385A SE515867C2 (sv) 1995-04-13 1995-04-13 Bipolär SOI-transistor
PCT/SE1996/000458 WO1996032798A1 (en) 1995-04-13 1996-04-09 Bipolar silicon-on-insulator transistor with increased breakdown voltage

Publications (1)

Publication Number Publication Date
HK1010606A1 true HK1010606A1 (en) 1999-06-25

Family

ID=20397959

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98111607A HK1010606A1 (en) 1995-04-13 1998-10-29 Bipolar silicon-on-insulator transistor with increased breakdown voltage

Country Status (11)

Country Link
EP (1) EP0820645B1 (de)
JP (1) JP4102434B2 (de)
KR (1) KR100372035B1 (de)
CN (1) CN1083162C (de)
AU (1) AU5351696A (de)
CA (1) CA2217049A1 (de)
DE (1) DE69622270T2 (de)
ES (1) ES2179941T3 (de)
HK (1) HK1010606A1 (de)
SE (1) SE515867C2 (de)
WO (1) WO1996032798A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100565886C (zh) * 2004-12-28 2009-12-02 Nxp股份有限公司 对衬底电压较不敏感的soi器件
FR2978614B1 (fr) 2011-07-25 2014-09-05 Altis Semiconductor Snc Substrat semi-conducteur comprenant des zones dopees formant une jonction p-n
JP6125866B2 (ja) * 2013-03-26 2017-05-10 新日本無線株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
US4766482A (en) * 1986-12-09 1988-08-23 General Electric Company Semiconductor device and method of making the same
JPH02327A (ja) * 1987-10-09 1990-01-05 Fujitsu Ltd 半導体装置
US4843448A (en) * 1988-04-18 1989-06-27 The United States Of America As Represented By The Secretary Of The Navy Thin-film integrated injection logic
US4902633A (en) * 1988-05-09 1990-02-20 Motorola, Inc. Process for making a bipolar integrated circuit
US5237193A (en) * 1988-06-24 1993-08-17 Siliconix Incorporated Lightly doped drain MOSFET with reduced on-resistance
US5262345A (en) * 1990-01-25 1993-11-16 Analog Devices, Inc. Complimentary bipolar/CMOS fabrication method
JPH0479364A (ja) * 1990-07-23 1992-03-12 Sony Corp 半導体装置の製造方法
JPH04213219A (ja) * 1990-12-07 1992-08-04 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路
JP2654268B2 (ja) * 1991-05-13 1997-09-17 株式会社東芝 半導体装置の使用方法

Also Published As

Publication number Publication date
JP4102434B2 (ja) 2008-06-18
WO1996032798A1 (en) 1996-10-17
ES2179941T3 (es) 2003-02-01
JPH11503573A (ja) 1999-03-26
CN1083162C (zh) 2002-04-17
EP0820645B1 (de) 2002-07-10
SE9501385L (sv) 1996-10-14
DE69622270D1 (de) 2002-08-14
KR19980703869A (ko) 1998-12-05
CN1181842A (zh) 1998-05-13
EP0820645A1 (de) 1998-01-28
AU5351696A (en) 1996-10-30
CA2217049A1 (en) 1996-10-17
KR100372035B1 (ko) 2003-06-19
SE515867C2 (sv) 2001-10-22
SE9501385D0 (sv) 1995-04-13
DE69622270T2 (de) 2003-02-06

Similar Documents

Publication Publication Date Title
DE69315239T2 (de) VDMOS-Transistor mit verbesserter Durchbruchsspannungscharakteristik
GB2308933B (en) Bidirectional voltage translator
SG70139A1 (en) Reduced parasitic resistance and capacitance field effect transistor
GB2297182B (en) Voltage driving circuits
GB2296376B (en) Bipolar transistor fabrication
EP0613187A3 (de) Hochspannung-MIS-Feldeffekttransistor.
GB2281150B (en) Insulated gate bipolar transistor
BR9700584A (pt) Tradutor de voltagem bidirecional
GB2296129B (en) Bipolar transistor fabrication
DE69419331D1 (de) Dielektrisch isolierter bipolarer Transistor
KR100190145B1 (en) High voltage mosfet with an improved channel stopper structure
DE69632627D1 (de) Spannungsgesteuerte Transistor-Treiberschaltung
GB2292858B (en) Low voltage bipolar amplifier
DE69610362T2 (de) Spannungsbegrenzungsvorrichtung
GB9623879D0 (en) Insulated gate bipolar transistor with integrated control
GB2311412B (en) Insulated gate bipolar transistors
GB2332797B (en) Low voltage transistor biasing
GB9425735D0 (en) Pillar bipolar transistors
IL119901A0 (en) High-voltage bipolar transistor utilizing field - terminated bond-pad electrodes
GB9610098D0 (en) Insulated gate bipolar transistor control
GB2287125B (en) High voltage transistors
HK1010606A1 (en) Bipolar silicon-on-insulator transistor with increased breakdown voltage
GB9321819D0 (en) Mos/bipolar device
EP0703629A3 (de) Vertikaler Feldeffekt-Transistor hoher Leistung
EP0853818A4 (de) Niederspannungs-kurzkanal-graben-dmos-transistor

Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20060409