DE69610517D1 - Mit einer ferroelektrischen Dünnschicht beschichtetes Substrat, Methode zu dessen Herstellung sowie nichtflüchtiger Speicher, der dieses Substrat enthält - Google Patents
Mit einer ferroelektrischen Dünnschicht beschichtetes Substrat, Methode zu dessen Herstellung sowie nichtflüchtiger Speicher, der dieses Substrat enthältInfo
- Publication number
- DE69610517D1 DE69610517D1 DE69610517T DE69610517T DE69610517D1 DE 69610517 D1 DE69610517 D1 DE 69610517D1 DE 69610517 T DE69610517 T DE 69610517T DE 69610517 T DE69610517 T DE 69610517T DE 69610517 D1 DE69610517 D1 DE 69610517D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- production
- thin film
- volatile memory
- ferroelectric thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Formation Of Insulating Films (AREA)
- Non-Volatile Memory (AREA)
- Inorganic Insulating Materials (AREA)
- Insulating Bodies (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7833895 | 1995-03-08 | ||
JP01790996A JP3363301B2 (ja) | 1995-03-08 | 1996-02-02 | 強誘電体薄膜被覆基板及びその製造方法及び強誘電体薄膜被覆基板によって構成された不揮発性メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69610517D1 true DE69610517D1 (de) | 2000-11-09 |
DE69610517T2 DE69610517T2 (de) | 2001-05-17 |
Family
ID=26354495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69610517T Expired - Lifetime DE69610517T2 (de) | 1995-03-08 | 1996-03-07 | Mit einer ferroelektrischen Dünnschicht beschichtetes Substrat, Methode zu dessen Herstellung sowie nichtflüchtiger Speicher, der dieses Substrat enthält |
Country Status (4)
Country | Link |
---|---|
US (1) | US5821005A (de) |
EP (1) | EP0732422B1 (de) |
JP (1) | JP3363301B2 (de) |
DE (1) | DE69610517T2 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10182291A (ja) * | 1996-12-20 | 1998-07-07 | Sharp Corp | 強誘電体薄膜の製造方法、強誘電体薄膜被覆基板及びキャパシタ |
JPH10209392A (ja) * | 1997-01-22 | 1998-08-07 | Sony Corp | 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法 |
US6104049A (en) * | 1997-03-03 | 2000-08-15 | Symetrix Corporation | Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same |
JPH10313097A (ja) * | 1997-05-13 | 1998-11-24 | Sharp Corp | 強誘電体薄膜、製造方法及び強誘電体薄膜を含んでなる素子 |
JP3549715B2 (ja) * | 1997-10-15 | 2004-08-04 | 日本電気株式会社 | Bi層状強誘電体薄膜の製造方法 |
US5967497A (en) * | 1997-12-15 | 1999-10-19 | Energy Absorption Systems, Inc. | Highway barrier and guardrail |
US6120846A (en) * | 1997-12-23 | 2000-09-19 | Advanced Technology Materials, Inc. | Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition |
US6010744A (en) * | 1997-12-23 | 2000-01-04 | Advanced Technology Materials, Inc. | Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films |
JPH11251586A (ja) * | 1998-03-03 | 1999-09-17 | Fuji Electric Co Ltd | 電界効果トランジスタ |
US6255122B1 (en) | 1999-04-27 | 2001-07-03 | International Business Machines Corporation | Amorphous dielectric capacitors on silicon |
US6388285B1 (en) | 1999-06-04 | 2002-05-14 | International Business Machines Corporation | Feram cell with internal oxygen source and method of oxygen release |
EP1096502B1 (de) * | 1999-10-13 | 2005-06-29 | Rohm Co., Ltd. | Nichtflüchtiger Speicher und Steuerungsverfahren dafür |
US6437392B1 (en) * | 1999-12-08 | 2002-08-20 | Agere Systems Optoelectronics Guardian Corp. | Article comprising a dielectric material of ZR-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same |
US6562678B1 (en) * | 2000-03-07 | 2003-05-13 | Symetrix Corporation | Chemical vapor deposition process for fabricating layered superlattice materials |
US7205056B2 (en) * | 2001-06-13 | 2007-04-17 | Seiko Epson Corporation | Ceramic film and method of manufacturing the same, ferroelectric capacitor, semiconductor device, and other element |
US6489645B1 (en) * | 2001-07-03 | 2002-12-03 | Matsushita Electric Industrial Co., Ltd. | Integrated circuit device including a layered superlattice material with an interface buffer layer |
CN1974472B (zh) * | 2001-08-28 | 2010-06-16 | Tdk株式会社 | 薄膜电容元件用组合物、绝缘膜、薄膜电容元件和电容器 |
KR20060135077A (ko) * | 2001-08-28 | 2006-12-28 | 티디케이가부시기가이샤 | 박막 용량 소자용 조성물, 고유전율 절연막, 박막 용량소자 및 박막 적층 콘덴서 |
JP3949990B2 (ja) * | 2002-03-29 | 2007-07-25 | 株式会社東芝 | 電圧制御発振器 |
US6559014B1 (en) * | 2001-10-15 | 2003-05-06 | Advanced Micro Devices, Inc. | Preparation of composite high-K / standard-K dielectrics for semiconductor devices |
KR100493155B1 (ko) * | 2002-05-23 | 2005-06-03 | 삼성전자주식회사 | 열적으로 안정한 강유전성 메모리 장치 |
US6818469B2 (en) * | 2002-05-27 | 2004-11-16 | Nec Corporation | Thin film capacitor, method for manufacturing the same and printed circuit board incorporating the same |
JP2004031728A (ja) * | 2002-06-27 | 2004-01-29 | Matsushita Electric Ind Co Ltd | 記憶装置 |
US6928376B2 (en) * | 2002-10-03 | 2005-08-09 | Texas Instruments Incorporated | Apparatus and methods for ferroelectric ram fatigue testing |
US20060237760A1 (en) * | 2003-02-27 | 2006-10-26 | Tdk Corporation | Thin-film capacitative element and electronic circuit and electronic equipment including the same |
US7312514B2 (en) | 2003-02-27 | 2007-12-25 | Tdk Corporation | High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element |
JP4977976B2 (ja) * | 2004-08-06 | 2012-07-18 | 三菱瓦斯化学株式会社 | 絶縁化超微粉末および高誘電率樹脂複合材料 |
JP2008028197A (ja) * | 2006-07-21 | 2008-02-07 | Matsushita Electric Ind Co Ltd | 強誘電体膜およびその製造方法、強誘電体キャパシタ、強誘電体メモリおよびその製造方法 |
JP4433214B2 (ja) | 2007-10-23 | 2010-03-17 | セイコーエプソン株式会社 | 圧電素子の製造方法、および圧電素子 |
JP5504008B2 (ja) | 2009-03-06 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5527527B2 (ja) * | 2010-03-12 | 2014-06-18 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置 |
US9607717B2 (en) * | 2014-06-06 | 2017-03-28 | Texas Instruments Incorporated | Reliability screening of ferroelectric memories in integrated circuits |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03108770A (ja) * | 1989-09-22 | 1991-05-08 | Olympus Optical Co Ltd | 強誘電体メモリ |
JPH03108192A (ja) * | 1989-09-22 | 1991-05-08 | Olympus Optical Co Ltd | 強誘電体メモリ |
US5423285A (en) * | 1991-02-25 | 1995-06-13 | Olympus Optical Co., Ltd. | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications |
JP3182909B2 (ja) * | 1991-09-25 | 2001-07-03 | セイコーエプソン株式会社 | 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法 |
JPH08502628A (ja) * | 1992-10-23 | 1996-03-19 | シメトリックス・コーポレーション | 層状超格子物質を作製し、それを含む電子デバイスを作製する方法 |
US5514484A (en) * | 1992-11-05 | 1996-05-07 | Fuji Xerox Co., Ltd. | Oriented ferroelectric thin film |
US5248564A (en) * | 1992-12-09 | 1993-09-28 | Bell Communications Research, Inc. | C-axis perovskite thin films grown on silicon dioxide |
JPH06302872A (ja) * | 1993-04-14 | 1994-10-28 | Sumitomo Electric Ind Ltd | 酸化物超電導薄膜上に上層の薄膜を積層する方法 |
US5548475A (en) * | 1993-11-15 | 1996-08-20 | Sharp Kabushiki Kaisha | Dielectric thin film device |
JP3113141B2 (ja) * | 1993-12-28 | 2000-11-27 | シャープ株式会社 | 強誘電体結晶薄膜被覆基板、その製造方法及び強誘電体結晶薄膜被覆基板を用いた強誘電体薄膜デバイス |
JP3095944B2 (ja) * | 1994-06-21 | 2000-10-10 | シャープ株式会社 | 酸化物結晶薄膜の製造方法及び薄膜素子 |
-
1996
- 1996-02-02 JP JP01790996A patent/JP3363301B2/ja not_active Expired - Fee Related
- 1996-03-07 EP EP96301577A patent/EP0732422B1/de not_active Expired - Lifetime
- 1996-03-07 DE DE69610517T patent/DE69610517T2/de not_active Expired - Lifetime
- 1996-03-08 US US08/612,584 patent/US5821005A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0732422A3 (de) | 1996-12-04 |
US5821005A (en) | 1998-10-13 |
EP0732422A2 (de) | 1996-09-18 |
DE69610517T2 (de) | 2001-05-17 |
JP3363301B2 (ja) | 2003-01-08 |
EP0732422B1 (de) | 2000-10-04 |
JPH08306231A (ja) | 1996-11-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |