DE69822593D1 - Herstellungsverfahren von einer Speicherzelle mit ferroelektrischem Einzeltransistor unter Verwendung eines chemisch-mechanischem Polierverfahren - Google Patents
Herstellungsverfahren von einer Speicherzelle mit ferroelektrischem Einzeltransistor unter Verwendung eines chemisch-mechanischem PolierverfahrenInfo
- Publication number
- DE69822593D1 DE69822593D1 DE69822593T DE69822593T DE69822593D1 DE 69822593 D1 DE69822593 D1 DE 69822593D1 DE 69822593 T DE69822593 T DE 69822593T DE 69822593 T DE69822593 T DE 69822593T DE 69822593 D1 DE69822593 D1 DE 69822593D1
- Authority
- DE
- Germany
- Prior art keywords
- chemical
- memory cell
- mechanical polishing
- single transistor
- ferroelectric single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000007517 polishing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/984,789 US5907762A (en) | 1997-12-04 | 1997-12-04 | Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing |
US984789 | 1997-12-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69822593D1 true DE69822593D1 (de) | 2004-04-29 |
DE69822593T2 DE69822593T2 (de) | 2005-02-03 |
Family
ID=25530882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69822593T Expired - Fee Related DE69822593T2 (de) | 1997-12-04 | 1998-12-03 | Herstellungsverfahren von einer Speicherzelle mit ferroelektrischem Einzeltransistor unter Verwendung eines chemisch-mechanischem Polierverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US5907762A (de) |
EP (1) | EP0923117B1 (de) |
JP (1) | JP3664467B2 (de) |
KR (1) | KR100277307B1 (de) |
DE (1) | DE69822593T2 (de) |
TW (1) | TW410393B (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6093575A (en) * | 1996-09-04 | 2000-07-25 | Nippon Steel Corporation | Semiconductor device and production method of a semiconductor device having a capacitor |
US6191441B1 (en) * | 1997-10-28 | 2001-02-20 | Fujitsu Limited | Ferroelectric memory device and its drive method |
US6072711A (en) * | 1997-12-12 | 2000-06-06 | Lg Semicon Co., Ltd. | Ferroelectric memory device without a separate cell plate line and method of making the same |
US5998225A (en) * | 1997-12-17 | 1999-12-07 | Texas Instruments Incorporated | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMs using disposable-oxide processing |
JP2000349249A (ja) * | 1999-06-08 | 2000-12-15 | Oki Electric Ind Co Ltd | 半導体記憶装置の製造方法 |
US6603161B2 (en) * | 2000-03-10 | 2003-08-05 | Kabushiki Kaisha Toshiba | Semiconductor device having ferroelectric capacitor and method for manufacturing the same |
JP4938921B2 (ja) * | 2000-03-16 | 2012-05-23 | 康夫 垂井 | トランジスタ型強誘電体不揮発性記憶素子 |
JP4523115B2 (ja) * | 2000-05-02 | 2010-08-11 | 富士通株式会社 | 強誘電体メモリ装置及びその製造方法 |
US20020109166A1 (en) * | 2001-02-13 | 2002-08-15 | Hsu Sheng Teng | MFMOS/MFMS non-volatile memory transistors and method of making same |
US6566148B2 (en) * | 2001-08-13 | 2003-05-20 | Sharp Laboratories Of America, Inc. | Method of making a ferroelectric memory transistor |
US6673664B2 (en) * | 2001-10-16 | 2004-01-06 | Sharp Laboratories Of America, Inc. | Method of making a self-aligned ferroelectric memory transistor |
US6531325B1 (en) * | 2002-06-04 | 2003-03-11 | Sharp Laboratories Of America, Inc. | Memory transistor and method of fabricating same |
US6716691B1 (en) | 2003-06-25 | 2004-04-06 | Sharp Laboratories Of America, Inc. | Self-aligned shallow trench isolation process having improved polysilicon gate thickness control |
GB2408644B (en) * | 2003-11-26 | 2007-04-25 | Wolfson Ltd | Amplifier |
US7012021B2 (en) * | 2004-01-29 | 2006-03-14 | Taiwan Semiconductor Mfg | Method for end point detection polysilicon chemical mechanical polishing in an anti-fuse memory device |
KR100605584B1 (ko) * | 2004-12-28 | 2006-07-31 | 주식회사 하이닉스반도체 | 스크래치가 방지되는 반도체장치의 제조 방법 |
US10050143B2 (en) * | 2016-09-13 | 2018-08-14 | International Business Machines Corporation | Integrated ferroelectric capacitor/ field effect transistor structure |
US10937783B2 (en) | 2016-11-29 | 2021-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10229921B2 (en) | 2017-02-03 | 2019-03-12 | International Business Machines Corporation | Structure featuring ferroelectric capacitance in interconnect level for steep sub-threshold complementary metal oxide semiconductor transistors |
US11901400B2 (en) * | 2019-03-29 | 2024-02-13 | Intel Corporation | MFM capacitor and process for forming such |
US11342343B2 (en) * | 2020-01-09 | 2022-05-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method for manufacturing the same |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3832700A (en) * | 1973-04-24 | 1974-08-27 | Westinghouse Electric Corp | Ferroelectric memory device |
US4419809A (en) * | 1981-12-30 | 1983-12-13 | International Business Machines Corporation | Fabrication process of sub-micrometer channel length MOSFETs |
US5192704A (en) * | 1989-06-30 | 1993-03-09 | Texas Instruments Incorporated | Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell |
US5070029A (en) * | 1989-10-30 | 1991-12-03 | Motorola, Inc. | Semiconductor process using selective deposition |
JP2723386B2 (ja) * | 1991-07-02 | 1998-03-09 | シャープ株式会社 | 不揮発性ランダムアクセスメモリ |
US5384729A (en) * | 1991-10-28 | 1995-01-24 | Rohm Co., Ltd. | Semiconductor storage device having ferroelectric film |
JP3207227B2 (ja) * | 1991-11-08 | 2001-09-10 | ローム株式会社 | 不揮発性半導体記憶装置 |
US5303182A (en) * | 1991-11-08 | 1994-04-12 | Rohm Co., Ltd. | Nonvolatile semiconductor memory utilizing a ferroelectric film |
JP3264506B2 (ja) * | 1991-11-18 | 2002-03-11 | ローム株式会社 | 強誘電体不揮発性記憶装置 |
FR2688090B1 (fr) * | 1992-02-27 | 1994-04-08 | Commissariat A Energie Atomique | Cellule memoire non volatile du type metal-ferroelectrique semi-conducteur. |
US5431958A (en) * | 1992-03-09 | 1995-07-11 | Sharp Kabushiki Kaisha | Metalorganic chemical vapor deposition of ferroelectric thin films |
JP2921812B2 (ja) * | 1992-12-24 | 1999-07-19 | シャープ株式会社 | 不揮発性半導体記憶装置 |
US5392189A (en) * | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
JP3113173B2 (ja) * | 1995-06-05 | 2000-11-27 | シャープ株式会社 | 不揮発性ランダムアクセスメモリ及びその製造方法 |
JP3281839B2 (ja) * | 1997-06-16 | 2002-05-13 | 三洋電機株式会社 | 誘電体メモリおよびその製造方法 |
-
1997
- 1997-12-04 US US08/984,789 patent/US5907762A/en not_active Expired - Fee Related
-
1998
- 1998-09-11 TW TW087115190A patent/TW410393B/zh not_active IP Right Cessation
- 1998-10-19 KR KR1019980043579A patent/KR100277307B1/ko not_active IP Right Cessation
- 1998-12-02 JP JP34285498A patent/JP3664467B2/ja not_active Expired - Fee Related
- 1998-12-03 DE DE69822593T patent/DE69822593T2/de not_active Expired - Fee Related
- 1998-12-03 EP EP98309917A patent/EP0923117B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100277307B1 (ko) | 2001-02-01 |
JPH11317502A (ja) | 1999-11-16 |
US5907762A (en) | 1999-05-25 |
EP0923117A1 (de) | 1999-06-16 |
DE69822593T2 (de) | 2005-02-03 |
KR19990062530A (ko) | 1999-07-26 |
JP3664467B2 (ja) | 2005-06-29 |
TW410393B (en) | 2000-11-01 |
EP0923117B1 (de) | 2004-03-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |