DE69621684D1 - Herstellungsverfahren einer DRAM-Kondensator-Speicherelektrode mit strukturierter Oberfläche - Google Patents

Herstellungsverfahren einer DRAM-Kondensator-Speicherelektrode mit strukturierter Oberfläche

Info

Publication number
DE69621684D1
DE69621684D1 DE69621684T DE69621684T DE69621684D1 DE 69621684 D1 DE69621684 D1 DE 69621684D1 DE 69621684 T DE69621684 T DE 69621684T DE 69621684 T DE69621684 T DE 69621684T DE 69621684 D1 DE69621684 D1 DE 69621684D1
Authority
DE
Germany
Prior art keywords
manufacturing
structured surface
dram capacitor
capacitor memory
memory electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69621684T
Other languages
English (en)
Other versions
DE69621684T2 (de
Inventor
Kyung-Hoon Kim
Young-Wook Park
Cha-Young Yoo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69621684D1 publication Critical patent/DE69621684D1/de
Publication of DE69621684T2 publication Critical patent/DE69621684T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/964—Roughened surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
DE69621684T 1995-03-22 1996-03-22 Herstellungsverfahren einer DRAM-Kondensator-Speicherelektrode mit strukturierter Oberfläche Expired - Lifetime DE69621684T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950006109A KR0165496B1 (ko) 1995-03-22 1995-03-22 고집적 반도체장치의 캐패시터 제조방법

Publications (2)

Publication Number Publication Date
DE69621684D1 true DE69621684D1 (de) 2002-07-18
DE69621684T2 DE69621684T2 (de) 2002-12-05

Family

ID=19410364

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69621684T Expired - Lifetime DE69621684T2 (de) 1995-03-22 1996-03-22 Herstellungsverfahren einer DRAM-Kondensator-Speicherelektrode mit strukturierter Oberfläche

Country Status (6)

Country Link
US (1) US5721153A (de)
EP (1) EP0734060B1 (de)
JP (1) JP3605219B2 (de)
KR (1) KR0165496B1 (de)
DE (1) DE69621684T2 (de)
TW (1) TW308712B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100224727B1 (ko) * 1996-11-30 1999-10-15 윤종용 웜웰형 반응챔버 및 이를 이용한 커패시터 제조방법
US5970360A (en) * 1996-12-03 1999-10-19 Mosel Vitelic Inc. DRAM cell with a roughened poly-Si electrode
US6218260B1 (en) * 1997-04-22 2001-04-17 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
US5946571A (en) * 1997-08-29 1999-08-31 United Microelectronics Corp. Method of forming a capacitor
KR100273987B1 (ko) 1997-10-31 2001-02-01 윤종용 디램 장치 및 제조 방법
TW401598B (en) * 1997-11-27 2000-08-11 United Microelectronics Corp The manufacture method of hemispherical grain silicon (HSG-Si)
TW364162B (en) * 1997-12-05 1999-07-11 United Microelectronics Corp Process for charge storage electrode structure
TW364205B (en) * 1997-12-19 1999-07-11 United Microelectronics Corp Method for producing DRAM capacitor
US6423611B1 (en) 1998-02-27 2002-07-23 Mosel Vitelic Inc. Manufacturing process of capacitor
TW421857B (en) * 1998-02-27 2001-02-11 Mosel Vitelic Inc Fabricating process and structure of lower electrode for capacitor
KR100301370B1 (ko) * 1998-04-29 2001-10-27 윤종용 디램셀커패시터의제조방법
KR100319207B1 (ko) 1998-06-15 2002-01-05 윤종용 메모리 셀의 실린더형 스토리지 커패시터 및 그 제조방법
US6074913A (en) * 1998-07-01 2000-06-13 Worldwide Semiconductor Manufacturing Corporation Method for forming a DRAM capacitor
US6004857A (en) * 1998-09-17 1999-12-21 Taiwan Semiconductor Manufacturing Company Method to increase DRAM capacitor via rough surface storage node plate
KR100363083B1 (ko) 1999-01-20 2002-11-30 삼성전자 주식회사 반구형 그레인 커패시터 및 그 형성방법
JP3466102B2 (ja) 1999-03-12 2003-11-10 沖電気工業株式会社 半導体装置及び半導体装置の製造方法
KR100317042B1 (ko) 1999-03-18 2001-12-22 윤종용 반구형 알갱이 실리콘을 가지는 실린더형 커패시터 및 그 제조방법
US6291295B1 (en) * 1999-05-24 2001-09-18 United Microelectronics Corp. Method of forming a storage electrode of a capacitor on an ion-implanted isolation layer
US6271086B1 (en) * 1999-06-30 2001-08-07 United Microelectronics Corp. Method for preventing the cluster defect of HSG
JP3324579B2 (ja) 1999-09-10 2002-09-17 日本電気株式会社 半導体記憶装置の製造方法
KR100322894B1 (ko) 1999-09-28 2002-03-18 윤종용 산화 실리콘과 폴리실리콘을 동시에 에칭하기 위한 에칭 가스 조성물, 이를 이용한 에칭 방법 및 이를 이용한 반도체 메모리 소자의 제조방법
KR20010076660A (ko) * 2000-01-27 2001-08-16 박종섭 커패시터 제조방법
US6746877B1 (en) * 2003-01-07 2004-06-08 Infineon Ag Encapsulation of ferroelectric capacitors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366917A (en) * 1990-03-20 1994-11-22 Nec Corporation Method for fabricating polycrystalline silicon having micro roughness on the surface
US5102832A (en) * 1991-02-11 1992-04-07 Micron Technology, Inc. Methods for texturizing polysilicon
JP2692402B2 (ja) * 1991-02-26 1997-12-17 日本電気株式会社 半導体素子の製造方法
KR940009616B1 (ko) * 1991-09-09 1994-10-15 금성일렉트론 주식회사 홀 캐패시터 셀 및 그 제조방법
KR940009628B1 (ko) * 1991-11-16 1994-10-15 삼성전자 주식회사 커패시터 및 그 제조방법
DE4321638A1 (de) * 1992-09-19 1994-03-24 Samsung Electronics Co Ltd Halbleiterspeicherbauelement mit einem Kondensator und Verfahren zu seiner Herstellung
US5278091A (en) * 1993-05-04 1994-01-11 Micron Semiconductor, Inc. Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node
JPH0774268A (ja) * 1993-07-07 1995-03-17 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US5354705A (en) * 1993-09-15 1994-10-11 Micron Semiconductor, Inc. Technique to fabricate a container structure with rough inner and outer surfaces
JP2817645B2 (ja) * 1995-01-25 1998-10-30 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JP3605219B2 (ja) 2004-12-22
EP0734060B1 (de) 2002-06-12
DE69621684T2 (de) 2002-12-05
EP0734060A1 (de) 1996-09-25
JPH08264732A (ja) 1996-10-11
KR0165496B1 (ko) 1998-12-15
KR960036062A (ko) 1996-10-28
TW308712B (de) 1997-06-21
US5721153A (en) 1998-02-24

Similar Documents

Publication Publication Date Title
DE69621684T2 (de) Herstellungsverfahren einer DRAM-Kondensator-Speicherelektrode mit strukturierter Oberfläche
ITMI922389A0 (it) Procedimento per la fabbricazione di un condensatore con una superficie di elettrodo rugosa
DE69427176D1 (de) Verfahren zur Herstellung einer Halbleiter-Kondensator-Elektrode
KR970703049A (ko) 유전체 캐패시터 및 그 제조방법
DE69113579D1 (de) Verfahren zur Herstellung einer DRAM-Zelle mit Stapelkondensator.
DE69115341D1 (de) Verfahren zur Herstellung einer DRAM-Zelle mit gestapeltem Kondensator
DE69613882T2 (de) Herstellungsverfahren eines piezoelektrischen Schichtenelementes
KR890015430A (ko) 캐패시터 및 그 제조방법
DE69429146D1 (de) DRAM-Zellenstruktur mit Grabenkondensator
KR970004035A (ko) 플래쉬 메모리 셀의 제조방법
IT8909529A0 (it) Memoria dinamica avente una struttura a trincea drogata sulla parete laterale e condensatore impilato e relativo metodo di fabbricazione
FR2664098B1 (fr) Condensateur empile d'une cellule dram et son procede de fabrication.
GB2336033B (en) A method of fabricating a dram cell capacitor
DE69514942T2 (de) Herstellungsverfahren von einem Elektrolytkondensator
FI952149A0 (fi) Seinärakenne ja menetelmä seinärakenteen valmistamSeinärakenne ja menetelmä seinärakenteen valmistamiseksi iseksi
DE59608481D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung mit Kondensator
DE69942885D1 (de) Herstellungsverfahren von einem Kondensator
GB2326524B (en) Method of fabricating a dynamic random access memory device
SG60009A1 (en) Method of manufacturing a multilayer capacitor
DE69740034D1 (de) Herstellungsverfahren einer Nadelelektrode
DE60000526T2 (de) Herstellungsverfahren eines Halbleiterspeichers mit Kondensator
DE69626881D1 (de) Verfahren zum Herstellen einer Kondensatorelektrode einer Halbleiterspeicheranordnung
GB9711566D0 (en) Method of manufacturing a semiconductor memory device with a stacked capacitor
DE69220725D1 (de) Herstellungsverfahren eines Kondensatorelementes für ein DRAM
DE69018839D1 (de) Verfahren zur Herstellung einer dynamischen Speicherzelle mit wahlfreiem Zugriff.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition