DE69626881D1 - Verfahren zum Herstellen einer Kondensatorelektrode einer Halbleiterspeicheranordnung - Google Patents

Verfahren zum Herstellen einer Kondensatorelektrode einer Halbleiterspeicheranordnung

Info

Publication number
DE69626881D1
DE69626881D1 DE69626881T DE69626881T DE69626881D1 DE 69626881 D1 DE69626881 D1 DE 69626881D1 DE 69626881 T DE69626881 T DE 69626881T DE 69626881 T DE69626881 T DE 69626881T DE 69626881 D1 DE69626881 D1 DE 69626881D1
Authority
DE
Germany
Prior art keywords
producing
memory device
semiconductor memory
capacitor electrode
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69626881T
Other languages
English (en)
Inventor
Toshiyuki Hirota
Shuji Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69626881D1 publication Critical patent/DE69626881D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
DE69626881T 1995-04-27 1996-04-24 Verfahren zum Herstellen einer Kondensatorelektrode einer Halbleiterspeicheranordnung Expired - Lifetime DE69626881D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7103760A JP2820065B2 (ja) 1995-04-27 1995-04-27 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE69626881D1 true DE69626881D1 (de) 2003-04-30

Family

ID=14362480

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69626881T Expired - Lifetime DE69626881D1 (de) 1995-04-27 1996-04-24 Verfahren zum Herstellen einer Kondensatorelektrode einer Halbleiterspeicheranordnung

Country Status (4)

Country Link
US (1) US6300186B1 (de)
EP (1) EP0740339B1 (de)
JP (1) JP2820065B2 (de)
DE (1) DE69626881D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2321776A (en) * 1996-08-16 1998-08-05 United Microelectronics Corp Method of fabricating a stacked capacitor
KR100236069B1 (ko) * 1996-12-26 1999-12-15 김영환 캐패시터 및 그 제조방법
AT410043B (de) * 1997-09-30 2003-01-27 Sez Ag Verfahren zum planarisieren von halbleitersubstraten
KR100532383B1 (ko) * 1998-05-26 2006-01-27 삼성전자주식회사 고유전막을 사용하는 반도체장치의 커패시터 제조방법
KR100466982B1 (ko) * 2002-03-11 2005-01-24 삼성전자주식회사 캐패시터를 갖는 반도체 장치 및 그 제조방법
US6746877B1 (en) * 2003-01-07 2004-06-08 Infineon Ag Encapsulation of ferroelectric capacitors
US7271058B2 (en) * 2005-01-20 2007-09-18 Infineon Technologies Ag Storage capacitor and method of manufacturing a storage capacitor

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3669775A (en) * 1969-12-29 1972-06-13 Bell Telephone Labor Inc Removal of boron and phosphorous-containing glasses from silicon surfaces
US3751314A (en) * 1971-07-01 1973-08-07 Bell Telephone Labor Inc Silicon semiconductor device processing
JPS5539634A (en) * 1978-09-12 1980-03-19 Matsushita Electronics Corp Manufacture of semiconductor
JPS58204540A (ja) * 1982-05-22 1983-11-29 Matsushita Electric Works Ltd 半導体装置の製法
JPS6130046A (ja) * 1984-07-23 1986-02-12 Nec Corp 半導体集積回路装置の製造方法
JPH01270344A (ja) 1988-04-22 1989-10-27 Fujitsu Ltd 半導体装置の製造方法
US5164337A (en) * 1989-11-01 1992-11-17 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor device having a capacitor in a stacked memory cell
KR910010748A (ko) 1989-11-30 1991-06-29 정몽헌 적층형 캐패시터 및 제조방법
US5223729A (en) * 1990-09-26 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device and a method of producing the same
JPH05226602A (ja) * 1992-02-18 1993-09-03 Fujitsu Ltd 半導体装置の製造方法
US5300463A (en) * 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
JPH0629463A (ja) * 1992-07-10 1994-02-04 Oki Electric Ind Co Ltd 半導体素子の製造方法
JP2870322B2 (ja) * 1992-10-06 1999-03-17 日本電気株式会社 半導体装置の製造方法
JP2526772B2 (ja) * 1992-12-08 1996-08-21 日本電気株式会社 半導体装置の製造方法
KR950010876B1 (ko) * 1992-12-30 1995-09-25 현대전자산업주식회사 반도체 기억장치의 전하보존전극 제조방법
JPH06310670A (ja) * 1993-04-22 1994-11-04 Sanyo Electric Co Ltd 半導体記憶装置の製造方法
US5436186A (en) * 1994-04-22 1995-07-25 United Microelectronics Corporation Process for fabricating a stacked capacitor
US5656536A (en) * 1996-03-29 1997-08-12 Vanguard International Semiconductor Corporation Method of manufacturing a crown shaped capacitor with horizontal fins for high density DRAMs

Also Published As

Publication number Publication date
EP0740339A2 (de) 1996-10-30
US6300186B1 (en) 2001-10-09
EP0740339B1 (de) 2003-03-26
JP2820065B2 (ja) 1998-11-05
JPH08306876A (ja) 1996-11-22
EP0740339A3 (de) 1998-07-29

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8332 No legal effect for de