DE69606100D1 - Dotieren von kristallinen Substraten - Google Patents

Dotieren von kristallinen Substraten

Info

Publication number
DE69606100D1
DE69606100D1 DE69606100T DE69606100T DE69606100D1 DE 69606100 D1 DE69606100 D1 DE 69606100D1 DE 69606100 T DE69606100 T DE 69606100T DE 69606100 T DE69606100 T DE 69606100T DE 69606100 D1 DE69606100 D1 DE 69606100D1
Authority
DE
Germany
Prior art keywords
crystalline substrates
doping crystalline
doping
substrates
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69606100T
Other languages
English (en)
Other versions
DE69606100T2 (de
Inventor
Johan Frans Prins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
De Beers Industrial Diamond Division Pty Ltd
Original Assignee
De Beers Industrial Diamond Division Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Industrial Diamond Division Pty Ltd filed Critical De Beers Industrial Diamond Division Pty Ltd
Application granted granted Critical
Publication of DE69606100D1 publication Critical patent/DE69606100D1/de
Publication of DE69606100T2 publication Critical patent/DE69606100T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
DE69606100T 1995-06-23 1996-06-24 Dotieren von kristallinen Substraten Expired - Fee Related DE69606100T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ZA955217 1995-06-23

Publications (2)

Publication Number Publication Date
DE69606100D1 true DE69606100D1 (de) 2000-02-17
DE69606100T2 DE69606100T2 (de) 2000-07-20

Family

ID=25585170

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69606100T Expired - Fee Related DE69606100T2 (de) 1995-06-23 1996-06-24 Dotieren von kristallinen Substraten

Country Status (4)

Country Link
US (1) US5994208A (de)
EP (1) EP0750058B1 (de)
JP (1) JPH09106958A (de)
DE (1) DE69606100T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19730083A1 (de) * 1997-07-14 1999-01-21 Rossendorf Forschzent Verfahren zur gezielten Herstellung von n-leitenden Bereichen in Diamantschichten mittels Ionenimplantation
JP2003500866A (ja) * 1999-05-31 2003-01-07 デ ビアス インダストリアル ダイアモンズ （プロプライエタリイ）リミテッド 結晶質基体へのドーピング
KR100644929B1 (ko) * 2004-03-04 2006-11-13 한국원자력연구소 이온주입과 열처리에 의한 발색된 다이아몬드의 제조방법
EP1895579B1 (de) * 2005-06-20 2016-06-15 Nippon Telegraph And Telephone Corporation Diamanthalbleiterbauelement und herstellungsverfahren dafür
JP5155536B2 (ja) * 2006-07-28 2013-03-06 一般財団法人電力中央研究所 ＳｉＣ結晶の質を向上させる方法およびＳｉＣ半導体素子の製造方法
JP5142257B2 (ja) * 2007-09-27 2013-02-13 独立行政法人産業技術総合研究所 不純物イオン注入層の電気的活性化方法
JP5463352B2 (ja) * 2008-06-12 2014-04-09 コリア アトミック エナジー リサーチ インスティチュート 発色調節されたサファイアの製造方法
US20110212590A1 (en) * 2010-02-26 2011-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. High temperature implantation method for stressor formation
US20130026492A1 (en) * 2011-07-30 2013-01-31 Akhan Technologies Inc. Diamond Semiconductor System and Method
CN104253015B (zh) * 2013-06-25 2017-12-22 中国科学院微电子研究所 降低二维晶体材料接触电阻的方法
DE102016104327B4 (de) * 2016-03-09 2023-12-28 Infineon Technologies Austria Ag Verfahren zum Herstellen einer Halbleitervorrichtung
CN113421826B (zh) * 2021-06-18 2024-02-09 南京大学 二维层状材料的原子级精度无损逐层刻蚀方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1599668A (en) * 1977-06-02 1981-10-07 Nat Res Dev Semiconductors
IL79107A (en) * 1985-06-17 1989-03-31 De Beers Ind Diamond Ion implantation in crystalline substrate
US5087576A (en) * 1987-10-26 1992-02-11 North Carolina State University Implantation and electrical activation of dopants into monocrystalline silicon carbide
US5075764A (en) * 1989-06-22 1991-12-24 Semiconductor Energy Laboratory Co., Ltd. Diamond electric device and manufacturing method for the same
JPH06103757B2 (ja) * 1989-06-22 1994-12-14 株式会社半導体エネルギー研究所 ダイヤモンド電子装置
US4976987A (en) * 1989-08-10 1990-12-11 The United States Of America As Represented By The Department Of Energy Process for forming one or more substantially pure layers in substrate material using ion implantation
US5252498A (en) * 1989-08-28 1993-10-12 Semiconductor Energy Laboratory Co., Ltd. Method of forming electronic devices utilizing diamond
US5554883A (en) * 1990-04-28 1996-09-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method therefor
US5328855A (en) * 1991-07-25 1994-07-12 Matsushita Electric Industrial Co., Ltd. Formation of semiconductor diamond
US5254862A (en) * 1991-08-14 1993-10-19 Kobe Steel U.S.A., Inc. Diamond field-effect transistor with a particular boron distribution profile
ZA933939B (en) * 1992-06-05 1993-12-30 De Beers Ind Diamond Diamond doping
US5322802A (en) * 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
US5318915A (en) * 1993-01-25 1994-06-07 North Carolina State University At Raleigh Method for forming a p-n junction in silicon carbide
US5609926A (en) * 1994-03-21 1997-03-11 Prins; Johan F. Diamond doping
US5468974A (en) * 1994-05-26 1995-11-21 Lsi Logic Corporation Control and modification of dopant distribution and activation in polysilicon
US5543637A (en) * 1994-11-14 1996-08-06 North Carolina State University Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

Also Published As

Publication number Publication date
EP0750058A3 (de) 1997-08-27
DE69606100T2 (de) 2000-07-20
EP0750058B1 (de) 2000-01-12
JPH09106958A (ja) 1997-04-22
US5994208A (en) 1999-11-30
EP0750058A2 (de) 1996-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee