JP5463352B2 - 発色調節されたサファイアの製造方法 - Google Patents
発色調節されたサファイアの製造方法 Download PDFInfo
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- JP5463352B2 JP5463352B2 JP2011513401A JP2011513401A JP5463352B2 JP 5463352 B2 JP5463352 B2 JP 5463352B2 JP 2011513401 A JP2011513401 A JP 2011513401A JP 2011513401 A JP2011513401 A JP 2011513401A JP 5463352 B2 JP5463352 B2 JP 5463352B2
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- Prior art keywords
- sapphire
- ions
- color
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- cobalt
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- 229910052594 sapphire Inorganic materials 0.000 title claims description 108
- 239000010980 sapphire Substances 0.000 title claims description 108
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 24
- 238000005468 ion implantation Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910021645 metal ion Inorganic materials 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 description 22
- 239000010941 cobalt Substances 0.000 description 22
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 22
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 19
- 229910052742 iron Inorganic materials 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- -1 iron ions Chemical class 0.000 description 12
- 230000005855 radiation Effects 0.000 description 10
- 229910001429 cobalt ion Inorganic materials 0.000 description 9
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 5
- 239000010437 gem Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 229910052500 inorganic mineral Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000011707 mineral Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910001751 gemstone Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910001430 chromium ion Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- 229910002515 CoAl Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920003345 Elvax® Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
Description
工程1;
無色のサファイアをイオン注入機の真空チャンバー内のイオン注入照射ジグに位置させた後、鉄をスパッタリングするか、または鉄を加熱して気化させた。その後、電子ビームまたは高周波を照射してプラズマ状態にし、鉄イオンを50keVで抽出して50keVで加速して、100keVの総イオン注入エネルギーを用いて、1×1017イオン/cm2の注入量で鉄イオンをサファイアに注入した。
工程1の鉄イオンが注入されたサファイアを、空気中で900℃まで3℃/分の加熱速度で加熱した後、6時間加熱した。その後、3℃/分の冷却速度で冷却した。前記工程1及び2を3回反復して色の濃度を増加させた。
鉄イオンの代わりにクロムイオンを用いたことを除き、実施例1の方法と同一の方法で行なった。但し、前記工程1及び2を1回実施した。
鉄イオンの代わりにコバルトイオンを用いたことを除き、実施例1の方法と同一の方法で行なった。但し、前記工程1及び2を1回実施した。
1.肉眼観察
コバルトイオン注入と熱処理によって発色変化が生じる機構を明らかにするために、X線光電子分光光度計(AXIS−NOVA,Kratos)を用いて注入コバルトのCo2p化学結合状態を分析した。前記X線光電子分光光度計を用いて、X線を試料に照射してコバルトの2pの結合エネルギーを測定することによりコバルト中の電子の結合状態を確認することができる。前記分析により、サファイアの構成元素であるアルミニウム及び酸素の結合状態が確認されると、注入されたコバルトがサファイアと化学結合を通じて安定的化し、発色調節されたサファイアを製造できることを示す。
発色調節されたサファイアの主な発色イオンを知るためにエネルギー分散型蛍光X線分析(ELVAX,ELVA)を行なった。物質内に存在する元素の定量及び定性分析ができるエネルギー分散型X線蛍光分析装置は、検出される元素の種類と硬度により主要な発色源を明らかにすることができる。
実施例3によって製造された発色調節されたサファイアが吸収する波長を分析して、前記サファイアが示す色を決定するためにUV−Vis分析(UV3101PC,Shimadzu)を実施した。可視光線領域で吸収される波長を観測してコバルトが注入されたサファイアが発色する色の種類を推定することができる。
Claims (2)
- クロムの金属材料をスパッタリングまたは加熱して気化させ、電子ビームまたは高周波で該気化させた金属材料に照射して、該気化させた金属材料をプラズマ状態にし、次いで、プラズマ状態から金属イオンを抽出して加速してサファイア表面に注入する工程(工程1)、及び
前記工程1の金属イオンが注入されたサファイアを酸素雰囲気または空気中で熱処理する工程(工程2)を含み、
工程1におけるイオン注入エネルギーが、50keV〜1000keVの範囲であり、金属イオンが、1×10 15 〜5×10 17 イオン/cm 2 の量でサファイアに注入され、
工程2において、金属イオン注入されたサファイアが、900〜1400℃の温度にて2〜36時間熱処理され、その後、冷却する、
発色調節されたサファイアの製造方法。 - 工程1及び工程2が、1〜10回反復して行なわれることを特徴とする、請求項1に記載の発色調節されたサファイアの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR2008/003268 WO2009151160A1 (en) | 2008-06-12 | 2008-06-12 | Method for manufacturing the color controlled sappire |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011524326A JP2011524326A (ja) | 2011-09-01 |
JP2011524326A5 JP2011524326A5 (ja) | 2013-11-28 |
JP5463352B2 true JP5463352B2 (ja) | 2014-04-09 |
Family
ID=41416852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011513401A Active JP5463352B2 (ja) | 2008-06-12 | 2008-06-12 | 発色調節されたサファイアの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8778463B2 (ja) |
JP (1) | JP5463352B2 (ja) |
CN (1) | CN102066624B (ja) |
WO (1) | WO2009151160A1 (ja) |
Families Citing this family (25)
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US10052848B2 (en) | 2012-03-06 | 2018-08-21 | Apple Inc. | Sapphire laminates |
US9221289B2 (en) | 2012-07-27 | 2015-12-29 | Apple Inc. | Sapphire window |
US9718249B2 (en) * | 2012-11-16 | 2017-08-01 | Apple Inc. | Laminated aluminum oxide cover component |
US9377912B2 (en) * | 2012-12-11 | 2016-06-28 | Gtat Corporation | Mobile electronic device comprising a modified sapphire |
US9092187B2 (en) | 2013-01-08 | 2015-07-28 | Apple Inc. | Ion implant indicia for cover glass or display component |
US9623628B2 (en) | 2013-01-10 | 2017-04-18 | Apple Inc. | Sapphire component with residual compressive stress |
US9232672B2 (en) | 2013-01-10 | 2016-01-05 | Apple Inc. | Ceramic insert control mechanism |
JP5999668B2 (ja) * | 2013-02-12 | 2016-09-28 | アップル インコーポレイテッド | マルチステップのイオンインプランテーション及びイオンインプランテーションシステム |
US9416442B2 (en) * | 2013-03-02 | 2016-08-16 | Apple Inc. | Sapphire property modification through ion implantation |
US9678540B2 (en) | 2013-09-23 | 2017-06-13 | Apple Inc. | Electronic component embedded in ceramic material |
US9632537B2 (en) | 2013-09-23 | 2017-04-25 | Apple Inc. | Electronic component embedded in ceramic material |
US9154678B2 (en) | 2013-12-11 | 2015-10-06 | Apple Inc. | Cover glass arrangement for an electronic device |
US9225056B2 (en) | 2014-02-12 | 2015-12-29 | Apple Inc. | Antenna on sapphire structure |
FR3027120B1 (fr) * | 2014-10-09 | 2016-12-23 | Quertech | Dalle tactile capacitive a haute transmission dans le domaine visible et inrayable |
SG11201609845VA (en) * | 2014-05-23 | 2016-12-29 | Quertech | Single- and/or multi-charged gas ion beam treatment method for producing an anti-glare sapphire material |
CN105039922B (zh) * | 2015-06-17 | 2018-01-30 | 蓝思科技(长沙)有限公司 | 一种带颜色的蓝宝石基材及其制备方法 |
US10406634B2 (en) | 2015-07-01 | 2019-09-10 | Apple Inc. | Enhancing strength in laser cutting of ceramic components |
US10280504B2 (en) | 2015-09-25 | 2019-05-07 | Apple Inc. | Ion-implanted, anti-reflective layer formed within sapphire material |
CN105671635A (zh) * | 2016-02-02 | 2016-06-15 | 同济大学 | 一种可吸收蓝光的蓝宝石晶体及其应用 |
JP6444568B2 (ja) * | 2016-04-25 | 2018-12-26 | 株式会社信光社 | 青色を呈する酸化アルミニウム単結晶およびその酸化アルミニウム単結晶の製造方法 |
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CN106637417B (zh) * | 2016-10-20 | 2018-09-28 | 河北工业大学 | 一种人工蓝宝石晶体的改色方法 |
FR3062658B1 (fr) * | 2017-02-03 | 2022-06-24 | Sa Quertech | Procede de traitement antireflectif et resistant a la rayure dans un saphir synthetique |
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2008
- 2008-06-12 JP JP2011513401A patent/JP5463352B2/ja active Active
- 2008-06-12 US US12/996,755 patent/US8778463B2/en active Active
- 2008-06-12 CN CN2008801297785A patent/CN102066624B/zh active Active
- 2008-06-12 WO PCT/KR2008/003268 patent/WO2009151160A1/en active Application Filing
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