DE69523252T2 - Einkristallssubstrat enthaltende Gegenstände - Google Patents

Einkristallssubstrat enthaltende Gegenstände

Info

Publication number
DE69523252T2
DE69523252T2 DE69523252T DE69523252T DE69523252T2 DE 69523252 T2 DE69523252 T2 DE 69523252T2 DE 69523252 T DE69523252 T DE 69523252T DE 69523252 T DE69523252 T DE 69523252T DE 69523252 T2 DE69523252 T2 DE 69523252T2
Authority
DE
Germany
Prior art keywords
single crystal
crystal substrate
containing single
articles containing
articles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69523252T
Other languages
English (en)
Other versions
DE69523252D1 (de
Inventor
Tatsuo Kawaguchi
Minoru Imaeda
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE69523252D1 publication Critical patent/DE69523252D1/de
Application granted granted Critical
Publication of DE69523252T2 publication Critical patent/DE69523252T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69523252T 1994-09-16 1995-06-08 Einkristallssubstrat enthaltende Gegenstände Expired - Lifetime DE69523252T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22208194 1994-09-16
JP8393995 1995-04-10

Publications (2)

Publication Number Publication Date
DE69523252D1 DE69523252D1 (de) 2001-11-22
DE69523252T2 true DE69523252T2 (de) 2002-07-11

Family

ID=26424977

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69523252T Expired - Lifetime DE69523252T2 (de) 1994-09-16 1995-06-08 Einkristallssubstrat enthaltende Gegenstände

Country Status (3)

Country Link
US (1) US5650006A (de)
EP (1) EP0707096B1 (de)
DE (1) DE69523252T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0987085A (ja) * 1995-09-22 1997-03-31 Ngk Insulators Ltd 光学単結晶品および光学素子
JPH1082921A (ja) * 1996-09-06 1998-03-31 Ngk Insulators Ltd 光導波路基板、光導波路部品、第二高調波発生デバイスおよび光導波路基板の製造方法
US6673330B1 (en) * 1999-03-26 2004-01-06 National Institute For Research In Inorganic Materials Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal
JP3938147B2 (ja) * 2003-04-08 2007-06-27 住友金属鉱山株式会社 タンタル酸リチウム基板およびその製造方法
CN114725354A (zh) * 2022-04-29 2022-07-08 远景动力技术(江苏)有限公司 正极材料及其应用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998687A (en) * 1975-03-10 1976-12-21 Bell Telephone Laboratories, Incorporated Technique for growth of thin film lithium niobate by liquid phase epitaxy
US4073675A (en) * 1976-07-21 1978-02-14 Bell Telephone Laboratories, Incorporated Waveguiding epitaxial LiNbO3 films
EP0444209B1 (de) * 1989-09-20 2000-11-08 Ibiden Co., Ltd. Dünnfilmeinzelkristall aus lithiumniobat und verfahren zu seiner herstellung
JP3340856B2 (ja) * 1994-03-25 2002-11-05 日本碍子株式会社 電気光学品及びその製造方法

Also Published As

Publication number Publication date
DE69523252D1 (de) 2001-11-22
EP0707096B1 (de) 2001-10-17
US5650006A (en) 1997-07-22
EP0707096A2 (de) 1996-04-17
EP0707096A3 (de) 1997-03-05

Similar Documents

Publication Publication Date Title
DE69620177D1 (de) Reflektierende halbleitersubstrate
KR970705775A (ko) 강유전성 액정 장치(Ferroeletric loquid crystal devices)
DE69506773T2 (de) Flüssigkristallzusammensetzung
DE69618264D1 (de) Verbesserungen bei der Herstellung von Kristallsubstraten
DE69612725D1 (de) Kristallhaltevorrichtung
DE69606100T2 (de) Dotieren von kristallinen Substraten
DE69531247D1 (de) Orientierte kristallanordnung
DE69800559T2 (de) Ferrielektrische Flüssigkristallverbindung
DE69505195T2 (de) Flüssigkristallzusammensetzung
DE69523916T2 (de) Flüssigkristallzusammensetzung
DE69523252D1 (de) Einkristallssubstrat enthaltende Gegenstände
FI951667A (fi) Liuosviljelykasvualusta
DE69823908D1 (de) Einkristallziehvorrichtung
DE19681567T1 (de) Flüssigkristallzusammensetzung
FR2724269B1 (fr) Porte-substrat electrostatique
KR960032351U (ko) 유리기판 회전장치
FI956192A0 (fi) Alustamateriaali
DE69508469D1 (de) Oxyde-Granat-Einkristall
BR9405908A (pt) Formulário portador
DE9310299U1 (de) Mehrfach-Substrat
DE59107256D1 (de) Oberflächenmodifizierte plättchenförmige substrate
DE69705458T2 (de) Kristallzüchtungssubstrat
DE69307629T2 (de) Farbbandsubstrat
KR950007359U (ko) 멀티 세라믹 기판
KR950031739U (ko) 크리스탈 오실레이터용 기판

Legal Events

Date Code Title Description
8364 No opposition during term of opposition