DE69508469D1 - Oxyde-Granat-Einkristall - Google Patents

Oxyde-Granat-Einkristall

Info

Publication number
DE69508469D1
DE69508469D1 DE69508469T DE69508469T DE69508469D1 DE 69508469 D1 DE69508469 D1 DE 69508469D1 DE 69508469 T DE69508469 T DE 69508469T DE 69508469 T DE69508469 T DE 69508469T DE 69508469 D1 DE69508469 D1 DE 69508469D1
Authority
DE
Germany
Prior art keywords
oxide
single crystal
garnet single
garnet
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69508469T
Other languages
English (en)
Other versions
DE69508469T2 (de
Inventor
Fukuda Satoru
Tanno Masayuki
Ryuo Toshihiko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE69508469D1 publication Critical patent/DE69508469D1/de
Publication of DE69508469T2 publication Critical patent/DE69508469T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/24—Garnets
    • H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
DE69508469T 1994-07-01 1995-06-20 Oxyde-Granat-Einkristall Expired - Fee Related DE69508469T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15111194A JP3490143B2 (ja) 1994-07-01 1994-07-01 酸化物ガーネット単結晶

Publications (2)

Publication Number Publication Date
DE69508469D1 true DE69508469D1 (de) 1999-04-29
DE69508469T2 DE69508469T2 (de) 1999-10-28

Family

ID=15511602

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508469T Expired - Fee Related DE69508469T2 (de) 1994-07-01 1995-06-20 Oxyde-Granat-Einkristall

Country Status (4)

Country Link
US (1) US5616176A (de)
EP (1) EP0690153B1 (de)
JP (1) JP3490143B2 (de)
DE (1) DE69508469T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000357622A (ja) * 1999-06-16 2000-12-26 Murata Mfg Co Ltd 磁性ガーネット単結晶膜の製造方法、および磁性ガーネット単結晶膜
JP3699629B2 (ja) * 2000-02-22 2005-09-28 Ｔｄｋ株式会社 磁性ガーネット材料及びそれを用いた磁気光学素子
US6770223B1 (en) * 2002-12-13 2004-08-03 Integrated Photonics, Inc. Article comprising a faraday rotator that does not require a bias magnet
US20090053558A1 (en) * 2004-11-15 2009-02-26 Integrated Phototonics, Inc. Article comprising a thick garnet film with negative growth-induced anisotropy

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4563236A (en) * 1981-11-13 1986-01-07 Litton Systems, Inc. Method for making large area stable domains
US4698820A (en) * 1986-05-01 1987-10-06 American Telephone And Telegraph Company, At&T Bell Laboratories Magnetic device and method of manufacture
US4810325A (en) * 1987-06-15 1989-03-07 American Telephone And Telegraph Company, At&T Bell Labs Liquid-phase-epitaxy deposition method in the manufacture of devices
JPH0277719A (ja) 1988-09-14 1990-03-16 Mitsubishi Gas Chem Co Inc 温度補償用磁気光学ガーネット
JPH085754B2 (ja) * 1989-04-13 1996-01-24 信越化学工業株式会社 酸化物ガーネット単結晶エピタキシヤル基板およびその製造方法
JPH0354198A (ja) * 1989-07-20 1991-03-08 Shin Etsu Chem Co Ltd 酸化物ガーネット単結晶
JPH0369597A (ja) * 1989-08-07 1991-03-25 Tokin Corp 磁気光学ガーネット
JPH03280012A (ja) 1990-03-29 1991-12-11 Mitsui Petrochem Ind Ltd 磁気光学材料
JPH0782164B2 (ja) * 1991-04-25 1995-09-06 松下電器産業株式会社 磁気光学素子及び磁界測定装置

Also Published As

Publication number Publication date
US5616176A (en) 1997-04-01
DE69508469T2 (de) 1999-10-28
JPH0817630A (ja) 1996-01-19
EP0690153B1 (de) 1999-03-24
JP3490143B2 (ja) 2004-01-26
EP0690153A1 (de) 1996-01-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee