DE69313785T2 - Nicht-flüchtiger ferroelektrischer Speicher mit gefalteten Bitleitungen und Verfahren zu dessen Herstellung - Google Patents

Nicht-flüchtiger ferroelektrischer Speicher mit gefalteten Bitleitungen und Verfahren zu dessen Herstellung

Info

Publication number
DE69313785T2
DE69313785T2 DE69313785T DE69313785T DE69313785T2 DE 69313785 T2 DE69313785 T2 DE 69313785T2 DE 69313785 T DE69313785 T DE 69313785T DE 69313785 T DE69313785 T DE 69313785T DE 69313785 T2 DE69313785 T2 DE 69313785T2
Authority
DE
Germany
Prior art keywords
production
bit lines
ferroelectric memory
folded bit
volatile ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69313785T
Other languages
English (en)
Other versions
DE69313785D1 (de
Inventor
William L Larson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ramtron International Corp
Original Assignee
Ramtron International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramtron International Corp filed Critical Ramtron International Corp
Application granted granted Critical
Publication of DE69313785D1 publication Critical patent/DE69313785D1/de
Publication of DE69313785T2 publication Critical patent/DE69313785T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
DE69313785T 1992-11-17 1993-11-16 Nicht-flüchtiger ferroelektrischer Speicher mit gefalteten Bitleitungen und Verfahren zu dessen Herstellung Expired - Fee Related DE69313785T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/977,825 US5371699A (en) 1992-11-17 1992-11-17 Non-volatile ferroelectric memory with folded bit lines and method of making the same

Publications (2)

Publication Number Publication Date
DE69313785D1 DE69313785D1 (de) 1997-10-16
DE69313785T2 true DE69313785T2 (de) 1998-04-09

Family

ID=25525560

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69313785T Expired - Fee Related DE69313785T2 (de) 1992-11-17 1993-11-16 Nicht-flüchtiger ferroelektrischer Speicher mit gefalteten Bitleitungen und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (1) US5371699A (de)
EP (1) EP0598596B1 (de)
JP (1) JP3174209B2 (de)
DE (1) DE69313785T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19916599B4 (de) * 1998-04-22 2006-06-29 LG Semicon Co., Ltd., Cheongju Ferroelektrischer SWL-Speicher und Schaltung zum Ansteuern desselben

Families Citing this family (33)

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US5567636A (en) * 1995-02-27 1996-10-22 Motorola Inc. Process for forming a nonvolatile random access memory array
SG79200A1 (en) * 1995-08-21 2001-03-20 Matsushita Electric Ind Co Ltd Ferroelectric memory devices and method for testing them
US5777356A (en) * 1996-01-03 1998-07-07 Bell Communications Research, Inc. Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same
JP2953369B2 (ja) * 1996-01-17 1999-09-27 日本電気株式会社 半導体装置の構造およびその製造方法
KR100299338B1 (ko) * 1996-04-19 2001-10-19 마츠시타 덴끼 산교 가부시키가이샤 반도체장치
US5760433A (en) * 1996-05-31 1998-06-02 Hughes Electronics In situ reactive layers for protection of ferroelectric integrated circuits
KR100197566B1 (ko) * 1996-06-29 1999-06-15 윤종용 강유전체 메모리 장치
KR100224673B1 (ko) * 1996-12-13 1999-10-15 윤종용 불휘발성 강유전체 메모리장치 및 그의 구동방법
US6097624A (en) 1997-09-17 2000-08-01 Samsung Electronics Co., Ltd. Methods of operating ferroelectric memory devices having reconfigurable bit lines
JP3039420B2 (ja) 1997-02-14 2000-05-08 日本電気株式会社 半導体メモリ
US6115281A (en) * 1997-06-09 2000-09-05 Telcordia Technologies, Inc. Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors
KR100297874B1 (ko) 1997-09-08 2001-10-24 윤종용 강유전체랜덤액세스메모리장치
US6072711A (en) 1997-12-12 2000-06-06 Lg Semicon Co., Ltd. Ferroelectric memory device without a separate cell plate line and method of making the same
US6091624A (en) * 1997-12-12 2000-07-18 Lg Semicon Co., Ltd. SWL ferroelectric memory and circuit for driving the same
US6091623A (en) * 1997-12-12 2000-07-18 Lg Semicon Co., Ltd. Split word line ferroelectric memory
US6128213A (en) * 1997-12-12 2000-10-03 Lg Semicon Co., Ltd. Nonvolatile ferroelectric memory and a method of manufacturing the same
US6125051A (en) * 1997-12-12 2000-09-26 Hyundai Electronics Industries Co., Ltd. Circuit for driving nonvolatile ferroelectric memory
KR100261174B1 (ko) * 1997-12-12 2000-07-01 김영환 비휘발성 강유전체 메모리 및 그의 제조 방법
US6418043B1 (en) 1997-12-12 2002-07-09 Hyundai Electronics Industries Co., Ltd. Circuit for driving nonvolatile ferroelectric memory
KR100268947B1 (ko) * 1998-04-03 2000-10-16 김영환 비휘발성 강유전체 메모리 및 그의 제어회로
US6215692B1 (en) 1998-05-13 2001-04-10 Hyundai Electronics Industries Co., Ltd. Non-volatile ferroelectric memory
KR100268875B1 (ko) 1998-05-13 2000-10-16 김영환 비휘발성 강유전체 메모리소자의 구동회로
KR100281125B1 (ko) * 1998-12-29 2001-03-02 김영환 비휘발성 강유전체 메모리장치
KR100298439B1 (ko) 1998-06-30 2001-08-07 김영환 비휘발성 강유전체 메모리
US6255157B1 (en) 1999-01-27 2001-07-03 International Business Machines Corporation Method for forming a ferroelectric capacitor under the bit line
US6611014B1 (en) 1999-05-14 2003-08-26 Kabushiki Kaisha Toshiba Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof
DE19948571A1 (de) 1999-10-08 2001-04-19 Infineon Technologies Ag Speicheranordnung
KR100317331B1 (ko) * 1999-11-11 2001-12-24 박종섭 불휘발성 강유전체 메모리 소자 및 그 제조방법
KR101450254B1 (ko) * 2008-07-09 2014-10-13 삼성전자주식회사 증가된 정전 용량을 갖는 스토리지 노드를 포함하는 반도체메모리 소자
JP2010040904A (ja) * 2008-08-07 2010-02-18 Nec Electronics Corp 半導体装置及びその製造方法
US20100327877A1 (en) * 2009-06-24 2010-12-30 Hynix Semiconductor Inc. Radio frequency identification (rfid) device and method for testing the same
KR101087934B1 (ko) * 2010-03-26 2011-11-28 주식회사 하이닉스반도체 Ｒｆｉｄ 장치
US9425085B2 (en) * 2014-05-05 2016-08-23 Taiwan Semiconductor Manufacturing Company Limited Structures, devices and methods for memory devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
KR950000156B1 (ko) * 1989-02-08 1995-01-10 세이꼬 엡슨 가부시끼가이샤 반도체 장치
US5070385A (en) * 1989-10-20 1991-12-03 Radiant Technologies Ferroelectric non-volatile variable resistive element
DE4118847A1 (de) * 1990-06-08 1991-12-12 Toshiba Kawasaki Kk Halbleiterspeicheranordnung mit ferroelektrischem kondensator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19916599B4 (de) * 1998-04-22 2006-06-29 LG Semicon Co., Ltd., Cheongju Ferroelektrischer SWL-Speicher und Schaltung zum Ansteuern desselben

Also Published As

Publication number Publication date
EP0598596A1 (de) 1994-05-25
EP0598596B1 (de) 1997-09-10
JPH06209113A (ja) 1994-07-26
DE69313785D1 (de) 1997-10-16
JP3174209B2 (ja) 2001-06-11
US5371699A (en) 1994-12-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee