DE69606932T2 - MOS-Kapazität für Halbleiteranordnung - Google Patents

MOS-Kapazität für Halbleiteranordnung

Info

Publication number
DE69606932T2
DE69606932T2 DE69606932T DE69606932T DE69606932T2 DE 69606932 T2 DE69606932 T2 DE 69606932T2 DE 69606932 T DE69606932 T DE 69606932T DE 69606932 T DE69606932 T DE 69606932T DE 69606932 T2 DE69606932 T2 DE 69606932T2
Authority
DE
Germany
Prior art keywords
insulating film
diffusion region
mos capacitor
conductivity type
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69606932T
Other languages
German (de)
English (en)
Other versions
DE69606932D1 (de
Inventor
Hoon Choi
Seung-Cheol Oh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69606932D1 publication Critical patent/DE69606932D1/de
Publication of DE69606932T2 publication Critical patent/DE69606932T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
DE69606932T 1995-07-21 1996-07-19 MOS-Kapazität für Halbleiteranordnung Expired - Lifetime DE69606932T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950021631A KR0144242B1 (ko) 1995-07-21 1995-07-21 반도체 메모리장치의 모오스 캐패시터의 크랙 방지구조

Publications (2)

Publication Number Publication Date
DE69606932D1 DE69606932D1 (de) 2000-04-13
DE69606932T2 true DE69606932T2 (de) 2000-10-19

Family

ID=19421256

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69606932T Expired - Lifetime DE69606932T2 (de) 1995-07-21 1996-07-19 MOS-Kapazität für Halbleiteranordnung

Country Status (6)

Country Link
US (1) US5793074A (enExample)
EP (1) EP0756332B1 (enExample)
JP (1) JP3590207B2 (enExample)
KR (1) KR0144242B1 (enExample)
DE (1) DE69606932T2 (enExample)
TW (1) TW300326B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285052B1 (en) * 1997-09-26 2001-09-04 Advanced Micro Devices, Inc. Integrated capacitor
KR100470991B1 (ko) * 1997-10-17 2005-07-11 삼성전자주식회사 승압회로
US6420747B2 (en) * 1999-02-10 2002-07-16 International Business Machines Corporation MOSCAP design for improved reliability
JP5073136B2 (ja) * 2001-08-24 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置
US6828654B2 (en) * 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
US7619298B1 (en) * 2005-03-31 2009-11-17 Xilinx, Inc. Method and apparatus for reducing parasitic capacitance
US7838383B2 (en) * 2008-01-04 2010-11-23 Freescale Semiconductor, Inc. Methods for forming MOS capacitors
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
CN102147566A (zh) * 2011-03-15 2011-08-10 利达光电股份有限公司 嵌入式操作系统的多媒体投影仪
KR101646575B1 (ko) * 2015-08-31 2016-08-08 삼부토건주식회사 급배수형 워터 벨트를 이용한 지중 급배수 시설 및 이의 시공 공법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56153778A (en) * 1980-04-30 1981-11-27 Toshiba Corp Mos type capacitor
US4830975A (en) * 1983-01-13 1989-05-16 National Semiconductor Corporation Method of manufacture a primos device
US5302843A (en) * 1990-07-26 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Improved vertical channel transistor
SE470415B (sv) * 1992-07-06 1994-02-14 Ericsson Telefon Ab L M Kondensator med hög kapacitans i ett integrerat funktionsblock eller en integrerad krets, förfarande för framställning av kondensatorn och användning av kondensatorn som en integrerad avkopplingskondensator
US5608258A (en) * 1995-03-16 1997-03-04 Zilog, Inc. MOS precision capacitor with low voltage coefficient

Also Published As

Publication number Publication date
JP3590207B2 (ja) 2004-11-17
US5793074A (en) 1998-08-11
KR970008558A (ko) 1997-02-24
EP0756332A2 (en) 1997-01-29
KR0144242B1 (ko) 1998-07-01
EP0756332B1 (en) 2000-03-08
EP0756332A3 (en) 1997-02-19
TW300326B (enExample) 1997-03-11
JPH0936307A (ja) 1997-02-07
DE69606932D1 (de) 2000-04-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition