JP3590207B2 - Ｍｏｓキャパシタ - Google Patents

Ｍｏｓキャパシタ Download PDF

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Publication number
JP3590207B2
JP3590207B2 JP19256996A JP19256996A JP3590207B2 JP 3590207 B2 JP3590207 B2 JP 3590207B2 JP 19256996 A JP19256996 A JP 19256996A JP 19256996 A JP19256996 A JP 19256996A JP 3590207 B2 JP3590207 B2 JP 3590207B2
Authority
JP
Japan
Prior art keywords
gate
conductivity type
mos capacitor
semiconductor substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP19256996A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0936307A (ja
Inventor
勳 崔
承▲ちょる▼ 呉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH0936307A publication Critical patent/JPH0936307A/ja
Application granted granted Critical
Publication of JP3590207B2 publication Critical patent/JP3590207B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP19256996A 1995-07-21 1996-07-22 Ｍｏｓキャパシタ Expired - Fee Related JP3590207B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019950021631A KR0144242B1 (ko) 1995-07-21 1995-07-21 반도체 메모리장치의 모오스 캐패시터의 크랙 방지구조
KR1995P21631 1995-07-21

Publications (2)

Publication Number Publication Date
JPH0936307A JPH0936307A (ja) 1997-02-07
JP3590207B2 true JP3590207B2 (ja) 2004-11-17

Family

ID=19421256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19256996A Expired - Fee Related JP3590207B2 (ja) 1995-07-21 1996-07-22 Ｍｏｓキャパシタ

Country Status (6)

Country Link
US (1) US5793074A (enExample)
EP (1) EP0756332B1 (enExample)
JP (1) JP3590207B2 (enExample)
KR (1) KR0144242B1 (enExample)
DE (1) DE69606932T2 (enExample)
TW (1) TW300326B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285052B1 (en) * 1997-09-26 2001-09-04 Advanced Micro Devices, Inc. Integrated capacitor
KR100470991B1 (ko) * 1997-10-17 2005-07-11 삼성전자주식회사 승압회로
US6420747B2 (en) * 1999-02-10 2002-07-16 International Business Machines Corporation MOSCAP design for improved reliability
JP5073136B2 (ja) * 2001-08-24 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置
US6828654B2 (en) * 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
US7619298B1 (en) * 2005-03-31 2009-11-17 Xilinx, Inc. Method and apparatus for reducing parasitic capacitance
US7838383B2 (en) * 2008-01-04 2010-11-23 Freescale Semiconductor, Inc. Methods for forming MOS capacitors
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
CN102147566A (zh) * 2011-03-15 2011-08-10 利达光电股份有限公司 嵌入式操作系统的多媒体投影仪
KR101646575B1 (ko) * 2015-08-31 2016-08-08 삼부토건주식회사 급배수형 워터 벨트를 이용한 지중 급배수 시설 및 이의 시공 공법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56153778A (en) * 1980-04-30 1981-11-27 Toshiba Corp Mos type capacitor
US4830975A (en) * 1983-01-13 1989-05-16 National Semiconductor Corporation Method of manufacture a primos device
US5302843A (en) * 1990-07-26 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Improved vertical channel transistor
SE470415B (sv) * 1992-07-06 1994-02-14 Ericsson Telefon Ab L M Kondensator med hög kapacitans i ett integrerat funktionsblock eller en integrerad krets, förfarande för framställning av kondensatorn och användning av kondensatorn som en integrerad avkopplingskondensator
US5608258A (en) * 1995-03-16 1997-03-04 Zilog, Inc. MOS precision capacitor with low voltage coefficient

Also Published As

Publication number Publication date
US5793074A (en) 1998-08-11
KR970008558A (ko) 1997-02-24
EP0756332A2 (en) 1997-01-29
DE69606932T2 (de) 2000-10-19
KR0144242B1 (ko) 1998-07-01
EP0756332B1 (en) 2000-03-08
EP0756332A3 (en) 1997-02-19
TW300326B (enExample) 1997-03-11
JPH0936307A (ja) 1997-02-07
DE69606932D1 (de) 2000-04-13

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