TW300326B - - Google Patents
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- Publication number
- TW300326B TW300326B TW085108925A TW85108925A TW300326B TW 300326 B TW300326 B TW 300326B TW 085108925 A TW085108925 A TW 085108925A TW 85108925 A TW85108925 A TW 85108925A TW 300326 B TW300326 B TW 300326B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating film
- mos capacitor
- electrode
- item
- diffusion region
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims description 47
- 238000009792 diffusion process Methods 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 2
- 238000005342 ion exchange Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 52
- 238000005336 cracking Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000009377 nuclear transmutation Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950021631A KR0144242B1 (ko) | 1995-07-21 | 1995-07-21 | 반도체 메모리장치의 모오스 캐패시터의 크랙 방지구조 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW300326B true TW300326B (enExample) | 1997-03-11 |
Family
ID=19421256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085108925A TW300326B (enExample) | 1995-07-21 | 1996-07-20 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5793074A (enExample) |
| EP (1) | EP0756332B1 (enExample) |
| JP (1) | JP3590207B2 (enExample) |
| KR (1) | KR0144242B1 (enExample) |
| DE (1) | DE69606932T2 (enExample) |
| TW (1) | TW300326B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102147566A (zh) * | 2011-03-15 | 2011-08-10 | 利达光电股份有限公司 | 嵌入式操作系统的多媒体投影仪 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6285052B1 (en) * | 1997-09-26 | 2001-09-04 | Advanced Micro Devices, Inc. | Integrated capacitor |
| KR100470991B1 (ko) * | 1997-10-17 | 2005-07-11 | 삼성전자주식회사 | 승압회로 |
| US6420747B2 (en) * | 1999-02-10 | 2002-07-16 | International Business Machines Corporation | MOSCAP design for improved reliability |
| JP5073136B2 (ja) * | 2001-08-24 | 2012-11-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US6828654B2 (en) * | 2001-12-27 | 2004-12-07 | Broadcom Corporation | Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same |
| US7619298B1 (en) * | 2005-03-31 | 2009-11-17 | Xilinx, Inc. | Method and apparatus for reducing parasitic capacitance |
| US7838383B2 (en) * | 2008-01-04 | 2010-11-23 | Freescale Semiconductor, Inc. | Methods for forming MOS capacitors |
| US8957468B2 (en) | 2010-11-05 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Variable capacitor and liquid crystal display device |
| KR101646575B1 (ko) * | 2015-08-31 | 2016-08-08 | 삼부토건주식회사 | 급배수형 워터 벨트를 이용한 지중 급배수 시설 및 이의 시공 공법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56153778A (en) * | 1980-04-30 | 1981-11-27 | Toshiba Corp | Mos type capacitor |
| US4830975A (en) * | 1983-01-13 | 1989-05-16 | National Semiconductor Corporation | Method of manufacture a primos device |
| US5302843A (en) * | 1990-07-26 | 1994-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Improved vertical channel transistor |
| SE470415B (sv) * | 1992-07-06 | 1994-02-14 | Ericsson Telefon Ab L M | Kondensator med hög kapacitans i ett integrerat funktionsblock eller en integrerad krets, förfarande för framställning av kondensatorn och användning av kondensatorn som en integrerad avkopplingskondensator |
| US5608258A (en) * | 1995-03-16 | 1997-03-04 | Zilog, Inc. | MOS precision capacitor with low voltage coefficient |
-
1995
- 1995-07-21 KR KR1019950021631A patent/KR0144242B1/ko not_active Expired - Fee Related
-
1996
- 1996-07-19 EP EP96111712A patent/EP0756332B1/en not_active Expired - Lifetime
- 1996-07-19 DE DE69606932T patent/DE69606932T2/de not_active Expired - Lifetime
- 1996-07-19 US US08/684,464 patent/US5793074A/en not_active Expired - Lifetime
- 1996-07-20 TW TW085108925A patent/TW300326B/zh active
- 1996-07-22 JP JP19256996A patent/JP3590207B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102147566A (zh) * | 2011-03-15 | 2011-08-10 | 利达光电股份有限公司 | 嵌入式操作系统的多媒体投影仪 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3590207B2 (ja) | 2004-11-17 |
| US5793074A (en) | 1998-08-11 |
| KR970008558A (ko) | 1997-02-24 |
| EP0756332A2 (en) | 1997-01-29 |
| DE69606932T2 (de) | 2000-10-19 |
| KR0144242B1 (ko) | 1998-07-01 |
| EP0756332B1 (en) | 2000-03-08 |
| EP0756332A3 (en) | 1997-02-19 |
| JPH0936307A (ja) | 1997-02-07 |
| DE69606932D1 (de) | 2000-04-13 |
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