KR0144242B1 - 반도체 메모리장치의 모오스 캐패시터의 크랙 방지구조 - Google Patents

반도체 메모리장치의 모오스 캐패시터의 크랙 방지구조

Info

Publication number
KR0144242B1
KR0144242B1 KR1019950021631A KR19950021631A KR0144242B1 KR 0144242 B1 KR0144242 B1 KR 0144242B1 KR 1019950021631 A KR1019950021631 A KR 1019950021631A KR 19950021631 A KR19950021631 A KR 19950021631A KR 0144242 B1 KR0144242 B1 KR 0144242B1
Authority
KR
South Korea
Prior art keywords
mos capacitor
diffusion regions
insulating film
memory device
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950021631A
Other languages
English (en)
Korean (ko)
Other versions
KR970008558A (ko
Inventor
훈 최
오승철
Original Assignee
김광호
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자주식회사 filed Critical 김광호
Priority to KR1019950021631A priority Critical patent/KR0144242B1/ko
Priority to DE69606932T priority patent/DE69606932T2/de
Priority to US08/684,464 priority patent/US5793074A/en
Priority to EP96111712A priority patent/EP0756332B1/en
Priority to TW085108925A priority patent/TW300326B/zh
Priority to JP19256996A priority patent/JP3590207B2/ja
Publication of KR970008558A publication Critical patent/KR970008558A/ko
Application granted granted Critical
Publication of KR0144242B1 publication Critical patent/KR0144242B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
KR1019950021631A 1995-07-21 1995-07-21 반도체 메모리장치의 모오스 캐패시터의 크랙 방지구조 Expired - Fee Related KR0144242B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019950021631A KR0144242B1 (ko) 1995-07-21 1995-07-21 반도체 메모리장치의 모오스 캐패시터의 크랙 방지구조
DE69606932T DE69606932T2 (de) 1995-07-21 1996-07-19 MOS-Kapazität für Halbleiteranordnung
US08/684,464 US5793074A (en) 1995-07-21 1996-07-19 Metal oxide semiconductor capacitors having uniform C-V characteristics over an operating range and reduced susceptibility to insulator breakdown
EP96111712A EP0756332B1 (en) 1995-07-21 1996-07-19 MOS capacitor of a semiconductor device
TW085108925A TW300326B (enExample) 1995-07-21 1996-07-20
JP19256996A JP3590207B2 (ja) 1995-07-21 1996-07-22 Ｍｏｓキャパシタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950021631A KR0144242B1 (ko) 1995-07-21 1995-07-21 반도체 메모리장치의 모오스 캐패시터의 크랙 방지구조

Publications (2)

Publication Number Publication Date
KR970008558A KR970008558A (ko) 1997-02-24
KR0144242B1 true KR0144242B1 (ko) 1998-07-01

Family

ID=19421256

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950021631A Expired - Fee Related KR0144242B1 (ko) 1995-07-21 1995-07-21 반도체 메모리장치의 모오스 캐패시터의 크랙 방지구조

Country Status (6)

Country Link
US (1) US5793074A (enExample)
EP (1) EP0756332B1 (enExample)
JP (1) JP3590207B2 (enExample)
KR (1) KR0144242B1 (enExample)
DE (1) DE69606932T2 (enExample)
TW (1) TW300326B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285052B1 (en) * 1997-09-26 2001-09-04 Advanced Micro Devices, Inc. Integrated capacitor
KR100470991B1 (ko) * 1997-10-17 2005-07-11 삼성전자주식회사 승압회로
US6420747B2 (en) * 1999-02-10 2002-07-16 International Business Machines Corporation MOSCAP design for improved reliability
JP5073136B2 (ja) * 2001-08-24 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置
US6828654B2 (en) * 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
US7619298B1 (en) * 2005-03-31 2009-11-17 Xilinx, Inc. Method and apparatus for reducing parasitic capacitance
US7838383B2 (en) * 2008-01-04 2010-11-23 Freescale Semiconductor, Inc. Methods for forming MOS capacitors
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
CN102147566A (zh) * 2011-03-15 2011-08-10 利达光电股份有限公司 嵌入式操作系统的多媒体投影仪
KR101646575B1 (ko) * 2015-08-31 2016-08-08 삼부토건주식회사 급배수형 워터 벨트를 이용한 지중 급배수 시설 및 이의 시공 공법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56153778A (en) * 1980-04-30 1981-11-27 Toshiba Corp Mos type capacitor
US4830975A (en) * 1983-01-13 1989-05-16 National Semiconductor Corporation Method of manufacture a primos device
US5302843A (en) * 1990-07-26 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Improved vertical channel transistor
SE470415B (sv) * 1992-07-06 1994-02-14 Ericsson Telefon Ab L M Kondensator med hög kapacitans i ett integrerat funktionsblock eller en integrerad krets, förfarande för framställning av kondensatorn och användning av kondensatorn som en integrerad avkopplingskondensator
US5608258A (en) * 1995-03-16 1997-03-04 Zilog, Inc. MOS precision capacitor with low voltage coefficient

Also Published As

Publication number Publication date
JP3590207B2 (ja) 2004-11-17
US5793074A (en) 1998-08-11
KR970008558A (ko) 1997-02-24
EP0756332A2 (en) 1997-01-29
DE69606932T2 (de) 2000-10-19
EP0756332B1 (en) 2000-03-08
EP0756332A3 (en) 1997-02-19
TW300326B (enExample) 1997-03-11
JPH0936307A (ja) 1997-02-07
DE69606932D1 (de) 2000-04-13

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