DE69602073T2 - Halbleiterspeicheranordnung vom synchronen Typ, insbesondere für Hochfrequenzsystemtakt - Google Patents
Halbleiterspeicheranordnung vom synchronen Typ, insbesondere für HochfrequenzsystemtaktInfo
- Publication number
- DE69602073T2 DE69602073T2 DE69602073T DE69602073T DE69602073T2 DE 69602073 T2 DE69602073 T2 DE 69602073T2 DE 69602073 T DE69602073 T DE 69602073T DE 69602073 T DE69602073 T DE 69602073T DE 69602073 T2 DE69602073 T2 DE 69602073T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- system clock
- frequency system
- memory arrangement
- synchronous type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7343511A JPH09180435A (ja) | 1995-12-28 | 1995-12-28 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69602073D1 DE69602073D1 (de) | 1999-05-20 |
DE69602073T2 true DE69602073T2 (de) | 1999-10-14 |
Family
ID=18362087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69602073T Expired - Fee Related DE69602073T2 (de) | 1995-12-28 | 1996-08-01 | Halbleiterspeicheranordnung vom synchronen Typ, insbesondere für Hochfrequenzsystemtakt |
Country Status (7)
Country | Link |
---|---|
US (1) | US5703829A (de) |
EP (1) | EP0782142B1 (de) |
JP (1) | JPH09180435A (de) |
KR (1) | KR100256467B1 (de) |
CN (1) | CN1156887A (de) |
DE (1) | DE69602073T2 (de) |
TW (1) | TW289824B (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10106257A (ja) * | 1996-09-06 | 1998-04-24 | Texas Instr Inc <Ti> | 集積回路のメモリ装置及びプリチャージ動作を与える方法 |
KR100245078B1 (ko) * | 1996-11-15 | 2000-02-15 | 김영환 | 고속 버스트 제어 방법 및 장치 |
JP4221764B2 (ja) * | 1997-04-25 | 2009-02-12 | 沖電気工業株式会社 | 半導体記憶装置 |
KR100477327B1 (ko) * | 1997-06-11 | 2005-07-07 | 삼성전자주식회사 | 동기디램용다이나믹클럭발생회로 |
US5862072A (en) * | 1997-08-22 | 1999-01-19 | Micron Technology, Inc. | Memory array architecture and method for dynamic cell plate sensing |
JPH1186547A (ja) * | 1997-08-30 | 1999-03-30 | Toshiba Corp | 半導体集積回路装置 |
JP2000067577A (ja) | 1998-06-10 | 2000-03-03 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
JP4216415B2 (ja) * | 1999-08-31 | 2009-01-28 | 株式会社ルネサステクノロジ | 半導体装置 |
KR100378191B1 (ko) * | 2001-01-16 | 2003-03-29 | 삼성전자주식회사 | 고주파 동작을 위한 레이턴시 제어회로 및 제어방법과이를구비하는 동기식 반도체 메모리장치 |
US7242624B2 (en) | 2005-06-14 | 2007-07-10 | Qualcomm Incorporated | Methods and apparatus for reading a full-swing memory array |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2555900B2 (ja) * | 1990-02-06 | 1996-11-20 | 日本電気株式会社 | 半導体メモリの出力制御回路 |
JPH03237680A (ja) * | 1990-02-13 | 1991-10-23 | Mitsubishi Electric Corp | 半導体メモリ装置 |
KR920004417B1 (ko) * | 1990-07-09 | 1992-06-04 | 삼성전자 주식회사 | 낮은 동작 전류를 갖는 sam 데이터 억세스회로 및 그 방법 |
JPH04263191A (ja) * | 1991-02-18 | 1992-09-18 | Nec Corp | 半導体記憶装置 |
JPH0520868A (ja) * | 1991-07-10 | 1993-01-29 | Toshiba Corp | メモリアクセス方法 |
US5278803A (en) * | 1991-09-11 | 1994-01-11 | Compaq Computer Corporation | Memory column address strobe buffer and synchronization and data latch interlock |
JPH07192470A (ja) * | 1993-03-08 | 1995-07-28 | Nec Ic Microcomput Syst Ltd | 半導体メモリの出力回路 |
KR940026946A (ko) * | 1993-05-12 | 1994-12-10 | 김광호 | 데이타출력 확장방법과 이를 통한 신뢰성있는 유효데이타의 출력이 이루어지는 반도체집적회로 |
JP3277603B2 (ja) * | 1993-05-19 | 2002-04-22 | 富士通株式会社 | 半導体記憶装置 |
US5349566A (en) * | 1993-05-19 | 1994-09-20 | Micron Semiconductor, Inc. | Memory device with pulse circuit for timing data output, and method for outputting data |
KR950014086B1 (ko) * | 1993-11-11 | 1995-11-21 | 현대전자산업주식회사 | 반도체 메모리 소자의 데이타 출력장치 |
US5402388A (en) * | 1993-12-16 | 1995-03-28 | Mosaid Technologies Incorporated | Variable latency scheme for synchronous memory |
JPH07182864A (ja) * | 1993-12-21 | 1995-07-21 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5452261A (en) * | 1994-06-24 | 1995-09-19 | Mosel Vitelic Corporation | Serial address generator for burst memory |
-
1995
- 1995-12-28 JP JP7343511A patent/JPH09180435A/ja not_active Withdrawn
- 1995-12-30 TW TW084114166A patent/TW289824B/zh active
-
1996
- 1996-07-23 US US08/681,428 patent/US5703829A/en not_active Expired - Fee Related
- 1996-08-01 EP EP96112466A patent/EP0782142B1/de not_active Expired - Lifetime
- 1996-08-01 DE DE69602073T patent/DE69602073T2/de not_active Expired - Fee Related
- 1996-12-24 CN CN96117919A patent/CN1156887A/zh active Pending
- 1996-12-28 KR KR1019960075233A patent/KR100256467B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0782142B1 (de) | 1999-04-14 |
KR970051300A (ko) | 1997-07-29 |
TW289824B (en) | 1996-11-01 |
EP0782142A1 (de) | 1997-07-02 |
CN1156887A (zh) | 1997-08-13 |
KR100256467B1 (ko) | 2000-05-15 |
US5703829A (en) | 1997-12-30 |
DE69602073D1 (de) | 1999-05-20 |
JPH09180435A (ja) | 1997-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |