DE69600091T2 - Integrierte Halbleiterschaltung mit interner Leistungsversorgungsschaltung zum Konstanthalten des Ausgangspegels gegen Lastschwankungen - Google Patents
Integrierte Halbleiterschaltung mit interner Leistungsversorgungsschaltung zum Konstanthalten des Ausgangspegels gegen LastschwankungenInfo
- Publication number
- DE69600091T2 DE69600091T2 DE69600091T DE69600091T DE69600091T2 DE 69600091 T2 DE69600091 T2 DE 69600091T2 DE 69600091 T DE69600091 T DE 69600091T DE 69600091 T DE69600091 T DE 69600091T DE 69600091 T2 DE69600091 T2 DE 69600091T2
- Authority
- DE
- Germany
- Prior art keywords
- keep
- power supply
- output level
- internal power
- integrated semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
- G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Automation & Control Theory (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01214696A JP3592423B2 (ja) | 1996-01-26 | 1996-01-26 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69600091D1 DE69600091D1 (de) | 1997-12-04 |
DE69600091T2 true DE69600091T2 (de) | 1998-04-09 |
Family
ID=11797364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69600091T Expired - Lifetime DE69600091T2 (de) | 1996-01-26 | 1996-07-05 | Integrierte Halbleiterschaltung mit interner Leistungsversorgungsschaltung zum Konstanthalten des Ausgangspegels gegen Lastschwankungen |
Country Status (7)
Country | Link |
---|---|
US (1) | US5812021A (de) |
EP (1) | EP0786776B1 (de) |
JP (1) | JP3592423B2 (de) |
KR (1) | KR100236815B1 (de) |
CN (1) | CN1110818C (de) |
DE (1) | DE69600091T2 (de) |
TW (1) | TW288117B (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6005438A (en) * | 1997-12-10 | 1999-12-21 | National Semiconductor Corporation | Output high voltage clamped circuit for low voltage differential swing applications in the case of overload |
FR2772155B1 (fr) * | 1997-12-10 | 2000-02-11 | Matra Mhs | Dispositif de generation d'une tension continue de reference |
US5942809A (en) * | 1997-12-24 | 1999-08-24 | Oki Electric Industry Co., Ltd. | Method and apparatus for generating internal supply voltage |
DE19919140B4 (de) | 1998-04-29 | 2011-03-31 | National Semiconductor Corp.(N.D.Ges.D.Staates Delaware), Santa Clara | Niederspannungs-Differenzsignaltreiber mit Vorverstärkerschaltung |
US6356140B1 (en) * | 1998-07-15 | 2002-03-12 | Linear Technology Corporation | Active pullup circuitry for open-drain signals |
US6297671B1 (en) * | 1998-09-01 | 2001-10-02 | Texas Instruments Incorporated | Level detection by voltage addition/subtraction |
US6297689B1 (en) * | 1999-02-03 | 2001-10-02 | National Semiconductor Corporation | Low temperature coefficient low power programmable CMOS voltage reference |
JP2001332699A (ja) * | 2000-05-25 | 2001-11-30 | Mitsubishi Electric Corp | 半導体集積装置および集積回路の電圧降下検出方法並びにその電圧降下補正方法 |
US6222353B1 (en) * | 2000-05-31 | 2001-04-24 | Philips Semiconductors, Inc. | Voltage regulator circuit |
US6320454B1 (en) | 2000-06-01 | 2001-11-20 | Atmel Corporation | Low power voltage regulator circuit for use in an integrated circuit device |
JP3487428B2 (ja) * | 2000-10-31 | 2004-01-19 | 松下電器産業株式会社 | 電源回路および非接触icカード |
JP2003051548A (ja) * | 2001-08-06 | 2003-02-21 | Sharp Corp | 半導体集積回路装置およびそれを用いた携帯端末 |
US6686789B2 (en) * | 2002-03-28 | 2004-02-03 | Agere Systems, Inc. | Dynamic low power reference circuit |
JP2004070813A (ja) * | 2002-08-08 | 2004-03-04 | Renesas Technology Corp | 半導体集積回路 |
FR2853475B1 (fr) * | 2003-04-01 | 2005-07-08 | Atmel Nantes Sa | Circuit integre delivrant des niveaux logiques a une tension independante de la tension d'alimentation, sans regulateur associe pour la partie puissance, et module de communication correspondant |
JP3863508B2 (ja) * | 2003-07-03 | 2006-12-27 | Necエレクトロニクス株式会社 | 電源電圧検出回路及び半導体集積回路装置 |
JP2005050473A (ja) * | 2003-07-31 | 2005-02-24 | Renesas Technology Corp | 半導体装置 |
KR100605574B1 (ko) * | 2003-12-30 | 2006-07-28 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 파워업 회로 |
JP4352937B2 (ja) * | 2004-03-03 | 2009-10-28 | セイコーエプソン株式会社 | 電源回路、電気光学装置および電子機器 |
JP2006086477A (ja) * | 2004-09-17 | 2006-03-30 | Fujitsu Ltd | 半導体装置 |
US7342420B2 (en) * | 2004-09-24 | 2008-03-11 | Integrated Device Technology, Inc. | Low power output driver |
WO2006129488A1 (ja) * | 2005-06-01 | 2006-12-07 | Matsushita Electric Industrial Co., Ltd. | 半導体記憶装置、及びそれを搭載した半導体集積回路 |
JP5361614B2 (ja) * | 2009-08-28 | 2013-12-04 | ルネサスエレクトロニクス株式会社 | 降圧回路 |
KR102433736B1 (ko) | 2012-01-23 | 2022-08-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3349336A (en) * | 1963-12-30 | 1967-10-24 | Automatic Elect Lab | High speed adder amplifier of the solid state type |
US3536958A (en) * | 1967-12-05 | 1970-10-27 | Rca Corp | Amplifier protection circuit |
JPS59218042A (ja) * | 1983-05-26 | 1984-12-08 | Toshiba Corp | 半導体集積回路 |
JPS60176121A (ja) * | 1984-02-22 | 1985-09-10 | Toshiba Corp | 電圧降下回路 |
US4634894A (en) * | 1985-03-04 | 1987-01-06 | Advanced Micro Devices, Inc. | Low power CMOS reference generator with low impedance driver |
JPH083766B2 (ja) * | 1986-05-31 | 1996-01-17 | 株式会社東芝 | 半導体集積回路の電源電圧降下回路 |
JPH06105856B2 (ja) * | 1986-06-27 | 1994-12-21 | 株式会社日立製作所 | 定電流源回路 |
US4950976A (en) * | 1989-09-29 | 1990-08-21 | Westinghouse Electric Corp. | Current variation reduction for mosfet current sources |
US5264743A (en) * | 1989-12-08 | 1993-11-23 | Hitachi, Ltd. | Semiconductor memory operating with low supply voltage |
JP2736483B2 (ja) * | 1992-03-03 | 1998-04-02 | 三菱電機株式会社 | 電圧発生装置 |
JPH0757463A (ja) * | 1993-08-18 | 1995-03-03 | Texas Instr Japan Ltd | 電圧発生回路及び1/2vdd発生回路 |
US5528190A (en) * | 1994-10-03 | 1996-06-18 | Delco Electronics Corporation | CMOS input voltage clamp |
-
1996
- 1996-01-26 JP JP01214696A patent/JP3592423B2/ja not_active Expired - Fee Related
- 1996-02-16 TW TW085101991A patent/TW288117B/zh not_active IP Right Cessation
- 1996-07-05 DE DE69600091T patent/DE69600091T2/de not_active Expired - Lifetime
- 1996-07-05 EP EP96110925A patent/EP0786776B1/de not_active Expired - Lifetime
-
1997
- 1997-01-23 CN CN97102317A patent/CN1110818C/zh not_active Expired - Fee Related
- 1997-01-24 KR KR1019970002038A patent/KR100236815B1/ko not_active IP Right Cessation
- 1997-10-31 US US08/962,074 patent/US5812021A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH09204775A (ja) | 1997-08-05 |
CN1163462A (zh) | 1997-10-29 |
TW288117B (en) | 1996-10-11 |
DE69600091D1 (de) | 1997-12-04 |
EP0786776B1 (de) | 1997-10-29 |
US5812021A (en) | 1998-09-22 |
CN1110818C (zh) | 2003-06-04 |
KR970060220A (ko) | 1997-08-12 |
KR100236815B1 (ko) | 2000-01-15 |
EP0786776A1 (de) | 1997-07-30 |
JP3592423B2 (ja) | 2004-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |