DE69522634D1 - Halbleiter-Feldeffekttransistor mit einer grossen Substratkontaktzone - Google Patents
Halbleiter-Feldeffekttransistor mit einer grossen SubstratkontaktzoneInfo
- Publication number
- DE69522634D1 DE69522634D1 DE69522634T DE69522634T DE69522634D1 DE 69522634 D1 DE69522634 D1 DE 69522634D1 DE 69522634 T DE69522634 T DE 69522634T DE 69522634 T DE69522634 T DE 69522634T DE 69522634 D1 DE69522634 D1 DE 69522634D1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- semiconductor field
- contact zone
- substrate contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6250853A JPH08115985A (ja) | 1994-10-17 | 1994-10-17 | 低雑音の半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69522634D1 true DE69522634D1 (de) | 2001-10-18 |
DE69522634T2 DE69522634T2 (de) | 2002-07-04 |
Family
ID=17213986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69522634T Expired - Fee Related DE69522634T2 (de) | 1994-10-17 | 1995-10-17 | Halbleiter-Feldeffekttransistor mit einer grossen Substratkontaktzone |
Country Status (5)
Country | Link |
---|---|
US (1) | US5559356A (de) |
EP (1) | EP0708486B1 (de) |
JP (1) | JPH08115985A (de) |
KR (1) | KR100196734B1 (de) |
DE (1) | DE69522634T2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09199607A (ja) * | 1996-01-18 | 1997-07-31 | Nec Corp | Cmos半導体装置 |
US6507235B1 (en) * | 1996-06-18 | 2003-01-14 | Micron Technology, Inc. | Local substrate pumping in integrated circuits |
JP2003017704A (ja) | 2001-06-29 | 2003-01-17 | Denso Corp | 半導体装置 |
JP2006228942A (ja) * | 2005-02-17 | 2006-08-31 | Nec Electronics Corp | 半導体装置 |
JP2008233123A (ja) * | 2007-03-16 | 2008-10-02 | Sony Corp | 表示装置 |
WO2017173322A1 (en) * | 2016-03-31 | 2017-10-05 | Skyworks Solutions, Inc. | Body contacts for field-effect transistors |
WO2021251081A1 (ja) * | 2020-06-08 | 2021-12-16 | ローム株式会社 | 半導体装置、電子機器 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60140862A (ja) * | 1983-12-28 | 1985-07-25 | Nec Corp | 半導体記憶装置 |
JPS61148862A (ja) * | 1984-12-22 | 1986-07-07 | Agency Of Ind Science & Technol | 半導体装置 |
JPS61179563A (ja) * | 1985-02-04 | 1986-08-12 | Toshiba Corp | 相補型集積回路装置 |
JPS62105525A (ja) * | 1985-11-01 | 1987-05-16 | Hitachi Ltd | 半導体集積回路装置 |
NL8701251A (nl) * | 1987-05-26 | 1988-12-16 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
JP2926969B2 (ja) * | 1990-04-26 | 1999-07-28 | 富士電機株式会社 | Mis型電界効果トランジスタを有する半導体装置 |
KR950009893B1 (ko) * | 1990-06-28 | 1995-09-01 | 미쓰비시 뎅끼 가부시끼가이샤 | 반도체기억장치 |
JP2609753B2 (ja) * | 1990-10-17 | 1997-05-14 | 株式会社東芝 | 半導体装置 |
EP0601823B1 (de) * | 1992-12-09 | 2000-10-11 | Compaq Computer Corporation | Herstellung eines Feldeffekttransistors mit integrierter Schottky-Klammerungsdiode |
JP2850736B2 (ja) * | 1992-12-28 | 1999-01-27 | 松下電器産業株式会社 | 半導体装置 |
US5451799A (en) * | 1992-12-28 | 1995-09-19 | Matsushita Electric Industrial Co., Ltd. | MOS transistor for protection against electrostatic discharge |
-
1994
- 1994-10-17 JP JP6250853A patent/JPH08115985A/ja active Pending
-
1995
- 1995-10-16 US US08/543,285 patent/US5559356A/en not_active Expired - Lifetime
- 1995-10-17 DE DE69522634T patent/DE69522634T2/de not_active Expired - Fee Related
- 1995-10-17 KR KR1019950035840A patent/KR100196734B1/ko not_active IP Right Cessation
- 1995-10-17 EP EP95116348A patent/EP0708486B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69522634T2 (de) | 2002-07-04 |
EP0708486A3 (de) | 1997-07-02 |
KR960015896A (ko) | 1996-05-22 |
KR100196734B1 (ko) | 1999-06-15 |
JPH08115985A (ja) | 1996-05-07 |
EP0708486A2 (de) | 1996-04-24 |
EP0708486B1 (de) | 2001-09-12 |
US5559356A (en) | 1996-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |