DE69512850T2 - Halbleiter-Diamant-Vorrichtung mit verbessertem Metall-Diamant-Kontakt - Google Patents

Halbleiter-Diamant-Vorrichtung mit verbessertem Metall-Diamant-Kontakt

Info

Publication number
DE69512850T2
DE69512850T2 DE69512850T DE69512850T DE69512850T2 DE 69512850 T2 DE69512850 T2 DE 69512850T2 DE 69512850 T DE69512850 T DE 69512850T DE 69512850 T DE69512850 T DE 69512850T DE 69512850 T2 DE69512850 T2 DE 69512850T2
Authority
DE
Germany
Prior art keywords
diamond
contact
improved metal
semiconductor
semiconductor diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69512850T
Other languages
English (en)
Other versions
DE69512850D1 (de
Inventor
Yoshiki Nishibayashi
Hiromu Shiomi
Shin-Ichi Shikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69512850D1 publication Critical patent/DE69512850D1/de
Application granted granted Critical
Publication of DE69512850T2 publication Critical patent/DE69512850T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/0425—Making electrodes
    • H01L21/043—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/0425—Making electrodes
    • H01L21/0435—Schottky electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69512850T 1994-08-17 1995-07-21 Halbleiter-Diamant-Vorrichtung mit verbessertem Metall-Diamant-Kontakt Expired - Lifetime DE69512850T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19323994A JP3309887B2 (ja) 1994-08-17 1994-08-17 半導体装置

Publications (2)

Publication Number Publication Date
DE69512850D1 DE69512850D1 (de) 1999-11-25
DE69512850T2 true DE69512850T2 (de) 2000-01-27

Family

ID=16304651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69512850T Expired - Lifetime DE69512850T2 (de) 1994-08-17 1995-07-21 Halbleiter-Diamant-Vorrichtung mit verbessertem Metall-Diamant-Kontakt

Country Status (4)

Country Link
US (1) US5757032A (de)
EP (1) EP0697738B1 (de)
JP (1) JP3309887B2 (de)
DE (1) DE69512850T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021123907A1 (de) 2021-09-15 2023-03-16 Universität Siegen, Körperschaft des öffentlichen Rechts LED und Herstellungsverfahren dafür

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6034404A (en) 1996-12-05 2000-03-07 California Institute Of Technology Schottky-barrier semiconductor device
TW385544B (en) * 1998-03-02 2000-03-21 Samsung Electronics Co Ltd Apparatus for manufacturing semiconductor device, and method of manufacturing capacitor of semiconductor device thereby
US6252245B1 (en) * 1999-03-29 2001-06-26 Howard Edan Katz Device comprising n-channel semiconductor material
US6849509B2 (en) * 2002-12-09 2005-02-01 Intel Corporation Methods of forming a multilayer stack alloy for work function engineering
JP4840798B2 (ja) * 2005-09-30 2011-12-21 独立行政法人産業技術総合研究所 電極の破壊電圧を抑制するためのダイヤモンド電極構造を備えたデバイス及びその製造方法
WO2008090513A2 (en) * 2007-01-22 2008-07-31 Element Six Limited Diamond electronic devices including a surface and methods for their manufacture
US8143654B1 (en) * 2008-01-16 2012-03-27 Triquint Semiconductor, Inc. Monolithic microwave integrated circuit with diamond layer
FR3004853B1 (fr) * 2013-04-22 2016-10-21 Centre Nat Rech Scient Procede de fabrication d'une diode schottky sur un substrat en diamant

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2671259B2 (ja) * 1988-03-28 1997-10-29 住友電気工業株式会社 ショットキー接合半導体装置
US5002899A (en) * 1988-09-30 1991-03-26 Massachusetts Institute Of Technology Electrical contacts on diamond
JPH02260470A (ja) * 1989-03-30 1990-10-23 Sumitomo Electric Ind Ltd 発光素子
JP2765067B2 (ja) * 1989-07-06 1998-06-11 住友電気工業株式会社 Ｐ型半導体ダイヤモンドのオーミツク接続電極
JPH0358480A (ja) * 1989-07-26 1991-03-13 Sumitomo Electric Ind Ltd 半導体ダイヤモンドのオーミツク接続電極
JPH0358481A (ja) * 1989-07-26 1991-03-13 Sumitomo Electric Ind Ltd 半導体ダイヤモンドのオーミツク接続電極とその形成方法
JP2913765B2 (ja) * 1990-05-21 1999-06-28 住友電気工業株式会社 シヨツトキー接合の形成法
US5382809A (en) * 1992-09-14 1995-01-17 Sumitomo Electric Industries, Ltd. Semiconductor device including semiconductor diamond
JPH06193239A (ja) 1992-12-22 1994-07-12 Matsushita Electric Works Ltd 床 材
JP3086556B2 (ja) * 1993-02-09 2000-09-11 株式会社神戸製鋼所 半導体ダイヤモンド層上の耐熱性オーミック電極及びその形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021123907A1 (de) 2021-09-15 2023-03-16 Universität Siegen, Körperschaft des öffentlichen Rechts LED und Herstellungsverfahren dafür

Also Published As

Publication number Publication date
EP0697738B1 (de) 1999-10-20
EP0697738A1 (de) 1996-02-21
DE69512850D1 (de) 1999-11-25
US5757032A (en) 1998-05-26
JPH0855819A (ja) 1996-02-27
JP3309887B2 (ja) 2002-07-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, SCHUMACHER, KNAUER, VON HIRSCHHAUSEN, 8033