DE69114906T2 - Dünnfilmtransistor mit einer Drainversatzzone. - Google Patents

Dünnfilmtransistor mit einer Drainversatzzone.

Info

Publication number
DE69114906T2
DE69114906T2 DE1991614906 DE69114906T DE69114906T2 DE 69114906 T2 DE69114906 T2 DE 69114906T2 DE 1991614906 DE1991614906 DE 1991614906 DE 69114906 T DE69114906 T DE 69114906T DE 69114906 T2 DE69114906 T2 DE 69114906T2
Authority
DE
Germany
Prior art keywords
thin film
film transistor
drain offset
offset zone
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1991614906
Other languages
English (en)
Other versions
DE69114906D1 (de
Inventor
Alberto Oscar Adan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69114906D1 publication Critical patent/DE69114906D1/de
Publication of DE69114906T2 publication Critical patent/DE69114906T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
DE1991614906 1990-04-27 1991-04-11 Dünnfilmtransistor mit einer Drainversatzzone. Expired - Fee Related DE69114906T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11383390A JP2502787B2 (ja) 1990-04-27 1990-04-27 Ｍｏｓ型薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
DE69114906D1 DE69114906D1 (de) 1996-01-11
DE69114906T2 true DE69114906T2 (de) 1996-05-23

Family

ID=14622189

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991614906 Expired - Fee Related DE69114906T2 (de) 1990-04-27 1991-04-11 Dünnfilmtransistor mit einer Drainversatzzone.

Country Status (3)

Country Link
EP (1) EP0457434B1 (de)
JP (1) JP2502787B2 (de)
DE (1) DE69114906T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04334054A (ja) * 1991-05-09 1992-11-20 Mitsubishi Electric Corp 半導体装置、電界効果トランジスタおよびその製造方法
KR100238193B1 (ko) * 1992-03-14 2000-01-15 윤종용 박막 트랜지스터와 그 제조 방법
EP0565231A3 (en) * 1992-03-31 1996-11-20 Sgs Thomson Microelectronics Method of fabricating a polysilicon thin film transistor
JP3254007B2 (ja) * 1992-06-09 2002-02-04 株式会社半導体エネルギー研究所 薄膜状半導体装置およびその作製方法
EP0589478B1 (de) * 1992-09-25 1999-11-17 Sony Corporation Flüssigkristall-Anzeigevorrichtung
US5348897A (en) * 1992-12-01 1994-09-20 Paradigm Technology, Inc. Transistor fabrication methods using overlapping masks
US5374572A (en) * 1993-07-22 1994-12-20 Motorola, Inc. Method of forming a transistor having an offset channel section
US5344790A (en) * 1993-08-31 1994-09-06 Sgs-Thomson Microelectronics, Inc. Making integrated circuit transistor having drain junction offset
JPH10275914A (ja) 1997-03-31 1998-10-13 Nec Corp 半導体装置
JP4618948B2 (ja) * 2001-08-24 2011-01-26 株式会社半導体エネルギー研究所 半導体装置の評価方法
FR2911004B1 (fr) 2006-12-28 2009-05-15 Commissariat Energie Atomique Procede de realisation de transistors a double-grille asymetriques permettant la realisation de transistors a double-grille asymetriques et symetriques sur un meme substrat
WO2011089841A1 (en) * 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
WO2019182086A1 (ja) * 2018-03-22 2019-09-26 国立研究開発法人産業技術総合研究所 トンネル電界効果トランジスタ及びその設計方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4232327A (en) * 1978-11-13 1980-11-04 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4312680A (en) * 1980-03-31 1982-01-26 Rca Corporation Method of manufacturing submicron channel transistors
US4751196A (en) * 1985-04-01 1988-06-14 Motorola Inc. High voltage thin film transistor on PLZT and method of manufacture thereof

Also Published As

Publication number Publication date
EP0457434A1 (de) 1991-11-21
EP0457434B1 (de) 1995-11-29
DE69114906D1 (de) 1996-01-11
JPH0410660A (ja) 1992-01-14
JP2502787B2 (ja) 1996-05-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee